ROHM-Semicon-RSE002N06TL

2.5V Drive Nch MOSFET  

RSE002N06  



Structure  



Dimensions

(Unit : mm)  

Silicon N-channel MOSFET  

EMT3  

SOT-416  

0.7  

0

.55  

1.6  

0.3  

( )  

3



Features  

(

)

( )  

1

2

1) High speed switing.  

2) Small package(EMT3).  

3) Low voltage drive(2.5V drive).  

0.

2  

0.2  

0.15  

0.5 0.5  

1.0  

(1)Source  

(2)Gate  

Abbreviated symbol : RK  

(3)Drain  



Application  

Switching  



Packaging specifications  



Inner circui

t  

(3)  

Package  

Taping  

TL  

Type  

Code  

Basic ordering unit (pieces)  

3000  



∗

2  

RSE002N06  

(2)  

∗

1  



Absolute maximum ratings

(Ta = 25



C)  

Parameter  

(1)  

(1) Source  

(2) Gate  

(3) Drain  

Symbo

l  

V

DS

S  

V

GSS  

I

D  

Limits  

U

nit  

V

∗

1 ESD PROTECTION DIODE  

∗

2 BODY DIODE  

Drain-source voltage  

60  



20  

Gate-source voltage  

V

Continuous  



250  



1  

1

25  

mA  

A

Drain current  

Pulsed  

*1  

I

DP  

I

S  

Con

tinu

ou

s  

Pu

lsed  

mA  

A

Source current  

(Body Diode)  

*

1  

*2  

I

SP  

1

Power dissipation  

P

D  

150  

mW  



C  



C  

Channel temperature  

T

ch  

Tstg  

150  

Range of sto

rag

e temperature  

*1 Pw



10



s, Duty cyc

le



1

%  



55 to +150  

*2 Each te

rminal m

ounted on a recommended land

.  



Thermal resistance  

Parameter  

Symbol  

Rth (ch-a)

*  

Limits  

833  

Unit  

Channel to ambient  



C / W  

* Each terminal mounted on a recommended land.  

2010.01 – Rev.A  

1/5  

c

○

2010 ROHM Co., Ltd. All rights reserved.  

RSE002N06  

Data Sheet  



Electrical characteristics

(

T

a =

2

5



C)

  

Parameter  

Symbol  

Min.  

Typ.  

–

Max.  

Unit  



A V

GS

=



20V, V

DS

=0V  

I

D

=1mA, V

GS

=0V  



A V

DS

=60V, V

GS

=0V  

Conditions  

Gate-source leakage  

I

GSS  

–



10  

Drain-source breakdown voltage

 

V

(BR)DSS  

60  

–

–

V

Zero gate voltage drain current  

Gate threshold voltage  

I

DSS  

–

–

1

V

GS (th)  

1.0  

–

2.3  

V



S

V

DS

=10V, I

D

=1mA  

–

1.7  

2.1  

2.3  

3.0  

–

2.4  

I

D

=250mA, V

GS

=10V  

I

D

=250mA, V

GS

=4.5V  

I

D

=250mA, V

GS

=4.0V  

I

D

=10mA, V

GS

=2.5V  

I

D

=250mA, V

DS

=10V  

–

3.0  

Static drain-source on-state  

resistance  

*

R

DS (on)  

–

3.2  

–

12.0  

*

Forward transfer admittance  

Input capacitance  

Output capacitance  

Reverse transfer capacitance  

Turn-on delay time  

Rise time  

l Y

fs

l  

0.25  

–

–

–

–

–

–

–

–

C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

–

–

–

–

–

–

–

15  

4.5  

2.0  

3.5  

5

pF V

DS

=25V  

pF V

GS

=0V  

pF f=1MHz  

*

*

*

*

ns I

D

=100m

A,

V

DD

30V  

ns

V

GS

=1

0V  

Turn-off delay time  

Fall time  

t

d(off)  

t

f  

18  

28  

ns R

L

3

00

  

ns

R

G

=1

0

  

*Pulsed  



Body diode characteristics

(Source-Drain) (

T

a =

2

5



C)

  

Parameter  

Forward voltage  

Symbol  

Min.  

–

Typ.  

–

Max. Unit  

1.2  

Conditi

ons  

*

V

SD  

V

I

s

=

250

m

A, V

GS

=0V  

*Pulsed  

2010.01 – Rev.A  

2/5  

c

○

2010 ROHM Co., Ltd. All rights reserved.  

RSE002N06  

Data Sheet  



Electrical characteristic curves  

1

0.1  

0.5  

0.4  

0.3  

0.2  

0.1  

0

0.5  

V

DS

= 10V  

Pulsed  

Ta= 25



C  

Pulsed  

Ta= 25



C  

V

GS

= 10V  

V

GS

= 4.5V  

Pulsed  

0.4  

V

V

GS

= 10V  

Ta=125



C  

Ta=75



C  

Ta=25



C  

Ta= -25



C  

V

GS

= 4.5V  

0.3  

V

GS

= 4.0V  

0.01  

V

GS

= 2.8V  

V

GS

= 2.5V  

0.2  

V

GS

= 2.8V  

0.001  

0.0001  

0.1  

V

GS

= 2.5V  

0

1.5  

2.5  

0

0.5  

1

2

3

0

2

DRAIN-SOURCE VOLTAGE : V

DS

[V]  

Fig.2 Typical Output Characteristics

( II )  

4

6

8

10  

0

0.2  

0.4  

0.6  

0.8  

1

DRAIN-SOURCE VOLTAGE : V

DS

[V]  

V

GATE-SOURCE VO

LTA

GE :  

Fig.1 Typical Output Characteristics

( I )  

Fig.3 Typical

 

Transfer Cha

ract

eristics  

100  

10  

1

100  

10  

1

100  

10  

1

V

GS

= 10V  

Pulsed  

V

GS

= 4.5V  

Ta= 25



C  

V

GS

= 2.5V  

Pulsed  

Pulsed  

Ta=125



C  

Ta=75



C  

Ta=25



C  

Ta= -25



C  

Ta=125



C  

V

GS

= 4.0V  

Ta=75



C  

Ta

=25



C  

Ta= -25



C  

V

V

GS

= 10V  

0.1  

0.1  

0.1  

0.001  

0.01  

0.1  

1

0.001  

0.01  

0.1  

1

0.001  

0.01  

0.1  

1

DRAIN-CURRENT : I

D

[A]  

D

RAIN

-C

URRENT : I

D

[A]  

DRAIN-CURRENT : I

D

[A]  

Fig.4 Static

 

Drain-Source On-State  

Fig.

5 Sta

ti

c Drain-Source On-St

ate  

Resistance vs. D

rain

Curr

ent

( I

I )  

Fig.6 Static

 

Drain-Source On-State  

Resistance vs. Drain Current

( III )  

Resistance vs. Drain Current

( I )  

100  

10  

1

100  

1

V

GS

=

2.5V  

P

ulse

d  

V

DS

= 10V  

Pulsed  

V

GS

= 4.0V  

Pulsed  

Ta=125



C  

Ta=75



C  

Ta=25



C  

Ta= -25



C  

Ta=

125



C  

Ta=7

5



C  

Ta=25



C  

Ta= -2

5



C  

10  

1

0.1  

Ta= -25



C  

Ta=25



C  

Ta=75



C  

Ta=125



C  

0.1  

0.01  

0.1  

0.001  

0.01  

0.1  

1

0.001  

0.01  

0.1  

1

0.001  

0.01  

0.1  

1

DRAIN-CURRENT : I

D

[A]  

DRAIN-CURRENT : I

D

[A]  

Fig.8 Static

 

Drain-Source On-State  

DRAIN-CURRENT : I

D

[A]  

Fig.7 Static

 

Drain-Source On-State  

Resistance vs. Drain Current

( IV )  

Fig.9 Forward Transfer Admittance  

vs. Drain Current  

Resistance vs. Drain Current

( IV )  

2010.01 – Rev.A  

3/5  

c

○

2010 ROHM Co., Ltd. All rights reserved.  

RSE002N06  

Data Sheet  

1

8

6

4

2

0

1000  

100  

10  

V

GS

=0V  

Ta=25



C  

Ta=25



C  

Pulsed  

t

d(off)  

Pulsed  

V

t

f  

V

GS

=10V  

R

G

=10

  

Pulsed  

0.1  

I

D

= 0.01A  

I

D

= 0.25A  

Ta=125

  

C

t

r  

0.01  

t

d(on)  

Ta=75



C  

Ta=25



C  

Ta=-25



C  

0.001  

0

1

0

2.5  

5

7.5  

10  

0.5  

1

1.5  

0.01  

0.1  

1

SOURCE-DRAIN VOLTAGE : V

SD

[V]  

GATE-SOURCE VOLTAGE : V

GS

[V]  

DRAIN-CURRE

NT

: I

D

[A

]  

Fig.10 Reverse Drain Current  

vs. Sourse-Drain Voltage  

Fig.12 Switching C

hara

cteristi

c

s  

Fig.11 Static

 

Drain-Source On-State  

Resistance vs. Gate Source Voltage  

100  

10  

1

Ta=25



C  

f=1MHz  

V

Ciss  

Crss  

Coss  

1

0.01  

0.1  

10  

100  

DRAIN-SOURCE VOLTAGE : V

DS

[V]  

Fig.13 Typical

 

Capacitance  

vs. Drain-Source Voltage  

2010.01 – Rev.A  

4/5  

c

○

2010 ROHM Co., Ltd. All rights reserved.  

RSE002N06  

Data Sheet  



Measurement circuits

  

Pulse width  

90%  

V

GS  

I

D  

V

DS  

50%  

10%  

50%  

V

V

GS  

DS  

R

L

10%  

10%  

90%  

D.U.T.  

V

DD  

R

G  

90%  

t

d(on)  

t

d(off)  

t

r

t

f  

t

on  

t

off  

Fig.1-1 Switching

 

time measurement circuit  

Fig.1-2 Switching

 

waveforms  



Notice

  

This product might cause chip aging and breakdown under the large electrif

ied e

nvironment.  

Please consider to design ESD protection circuit.  

2010.01 – Rev.A  

5/5  

c

○

2010 ROHM Co., Ltd. All rights reserved.  

Notice  

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o

ns,  

which can be obtained from ROHM upon request.  

Examples of application circuits, circuit constants and any other information cont

a

ined herein  

illustrate the standard usage and operations of the Products. The peripheral cond

itio

ns must  

be taken into account when designing circuits for mass production.  

Great care was taken in ensuring the accuracy of the information specified

in t

his document.  

However, should you incur any damage arising from any inaccuracy

or

mis

p

rint of such  

information, ROHM shall bear no responsibility for such damage.  

The technical information specified herein is intended only to show

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ical functions of and  

examples of application circuits for the Products. ROHM d

oes

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r ot

he

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ord

ance with the instr

u

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Pr

odu

cts

ar

e

not designed or m

a

nufactured to be used with any equipment, device or  

s

ystem

which requires an extremely

hig

h level of reliability the failure or malfunction of which  

may r

es

ult i

n a direct threa

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uman life or create a risk of human injury (such as a medical  

ins

tru

ment, transpor

t

ation

equ

ip

m

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