ROHM-Semicon-RTM002P02T2L

Part #ROHM-Semicon-RTM002P02T2L
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ROHM-Semicon-RTM002P02T2L
RTM002P02  
Transistors  
2.5V Drive
 
Pch MOS
 
FET  
RTM002P02  
z
Structure  
z
External dimensions
(Unit : mm)  
Silicon P-channel MOS FET  
VMT3  
1.2  
0.32  
z
Features  
(3)  
1) Low On-resistance.  
2) Small package (VMT3).  
3) 2.5V drive.  
(
)( )  
2
1
0.22  
0.13  
0.5  
0.4 0.4  
0.8  
(1)Gate  
(2)Source  
(3)Dr
ain  
Abbreviated symbol : TW  
z
Applications  
Switching  
z
Packaging specifications  
z
Inner circuit  
Package  
Taping  
T2L  
(3)  
Type  
Code  
Basic ordering unit (pieces)  
8000  
RTM002P02  
(1)  
∗
2  
∗
1  
(1) Gate  
(2)  
(2) Source  
(3) Drain  
∗
1 ESD PROTECTION DIODE  
∗
2 BODY DIODE  
z
Absolute maximum ratings
(
T
a
=25
°
C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
V

DSS  

V

GSS  

I

D  

Limits  
−
20  
12  
Unit  
V
V
Continuous  
0.2  
A
Drain current  
Pulsed  
∗
1  
I

DP  

P

D  

0.4  
A
∗
2  
Total power dissipation  
Channel temperature  
0.15  
W
°
C  
°
C  
Tch  
Tstg  
150  
Range of storage temperature  
−
55 to
+
150  
∗
1 Pw
≤
10
µ
s, Duty cycle
≤
1%  
∗
2 Each terminal mounted on a recommended land  
z
Thermal resistance  
Parameter  
Symbol  
Limits  
833  
Unit  
∗
Channel to ambient  
Rth(ch-a)  
°
C/W  
∗
Each terminal mounted on a recommended land  
1/2  

RTM002P02  
Transistors  
z
Electrical characteristics
(
T
a
=25
°
C)  
Parameter  
Symbol Min.
 
Typ. Max.  
Conditions  
Unit  
Gate-source leakage  
I

GSS  

−
−
−
−
10  
−
µ
A V

GS  

=
12V, V

DS

=0V  
Drain-source breakdown voltage
 
V

(BR) DSS
 

−
20  
Zero gate voltage drain current  
V
µ
A  
V
I

D

=
−
1mA, V

GS

=0V  
I

DSS  

−
−
1  
−
2.0  
1.5  
1.6  
3.0  
−
−
−
−
−
V

DS

=
−
20V, V

GS

=0V  

DS

=
−
10V, I

D

=
−
1mA  
Gate threshold voltage  
V

GS (th)
 

−
0.7  
−
V
−
−
−
1.0  
1.1  
2.0  
−
Ω
Ω
Ω
I

D

=
−
0.2A, V

GS

=
−
4.5V  
I

D

=
−
0.2A, V

GS

=
−
4V  
I

D

=
−
0.15A, V

GS

=
−
2.5V  
Static drain-source on-state  
resistance  
∗
R

DS (on)  

∗
Forward transfer admittance  
Input capacitance  
Y

fs  

C

iss  

0.2  
S
V
V
V

DS

=
−
10V, I

D

=
−
0.15A  

DS

=
−
10V  

GS

= 0V  
−
−
−
−
−
−
−
50  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C

oss  

C

rss  

t

d (on)  

5
5
f=1MHz  
∗
∗
∗
∗
9
V
DD
−
15
V  
I
V
R
D
=
−
0.15A  
t
r
6
−
−
−
GS
=
−
4.5V  
Turn-off delay time  
t

d (off)  

t

f  

35  
45  
L
= 100
Ω  
Fall time  
∗
Pulsed  
R
G
= 10
Ω  
z
Body diode characteristics
(Source-drain) (
T
a
=25
°
C)  
Parameter  
Symbol Min.
 
Typ. Max.  
Conditions  
I

S

=
−
0.1A, V

GS

=0V  
Unit  
V
Forward voltage  
V
SD  
−
−
−
1.2  
2/2  

Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party’s intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer’s right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export
T
r
ade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to “objective” criteria or an “informed” (by MITI clause)  
on the basis of “catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1