ROHM-Semicon-RUL035N02TR
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RUL035N02
Nch 20V 3.5A Power MOSFET
Datasheet
l
Outline
(6)
V
DSS
20V
43m
W
3.5A
(5)
TUMT6
SOT-363T
(4)
R
DS(on)
(Max.)
I
D
(1)
(2)
(3)
P
D
1.0W
l
Features
l
Inner circuit
1) Low on – resistance.
2) 1.5V Drive.
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TUMT6).
5) Pb-free lead plating ; RoHS compliant
*
1 ESD PROTECTION DIODE
*
2 BODY DIODE
l
Packaging specifications
Packaging
Taping
180
8
Reel size (mm)
l
Application
Tape width (mm)
Type
DC/DC converters
Basic ordering unit (pcs)
3,000
TR
Taping code
Marking
XD
l
Absolute maximum ratings
(T
a
= 25°C)
Parameter
Symbol
Value
20
Unit
V
V
DSS
Drain – Source voltage
Continuous drain current
Pulsed drain current
*1
A
I
D
3.5
*2
A
I
D,pulse
V
GSS
7
Gate – Source voltage
V
10
*3
1.0
W
W
°C
°C
P
D
Power dissipation
*4
0.32
P
D
T
j
Junction temperature
150
T
stg
Range of storage temperature
–
55 to
+
150
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.B
1/11
Data Sheet
RUL035N02
l
Thermal resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
*3
–
–
–
–
125
391
°C/W
°C/W
R
thJA
Thermal resistance, junction – ambient
*4
R
thJA
l
Electrical characteristics
(T
a
= 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
20
Max.
–
Drain – Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
–
ΔV
(BR)DSS
ΔT
j
I
D
=1mA
referenced to 25°C
Breakdown voltage
temperature coefficient
–
20
–
mV/°C
I
DSS
I
GSS
V
DS
= 20V, V
GS
= 0V
Zero gate voltage drain current
Gate – Source leakage current
Gate threshold voltage
–
–
–
–
–
1
m
A
m
A
V
V
GS
=
10V, V
DS
= 0V
10
1.0
V
GS (th)
V
DS
= 10V, I
D
= 1mA
0.3
ΔV
(GS)th
ΔT
j
I
D
=1mA
referenced to 25°C
Gate threshold voltage
temperature coefficient
–
–
mV/°C
–
1.9
V
GS
=4.5V, I
D
=3.5A
V
GS
=2.5V, I
D
=3.5A
V
GS
=1.8V, I
D
=1.8A
V
GS
=1.5V, I
D
=0.7A
V
GS
=4.5V, I
D
=3.5A, T
j
=125°C
f = 1MHz, open drain
V
DS
=10V, I
D
=3.5A
–
31
38
50
66
56
7.5
8.5
43
53
70
93
80
–
–
Static drain – source
on – state resistance
*5
–
R
DS(on)
m
W
–
–
R
G
Gate input resistannce
Transconductance
–
W
*5
3.2
–
S
g
fs
*1 Limited only by maximum temperature allowed.
*2 Pw
10
m
s, Duty cycle
1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.B
2/11
Data Sheet
RUL035N02
l
Electrical characteristics
(T
a
= 25°C)
Values
Typ.
460
110
60
Parameter
Symbol
Conditions
V
GS
= 0V
Unit
Min.
Max.
C
iss
C
oss
C
rss
Input capacitance
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
DS
= 10V
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn – on delay time
Rise time
pF
ns
*5
V
DD
⋍
10V, V
GS
= 4.5V
10
t
d(on)
*5
I
D
= 1.8A
R
L
= 5.6
W
R
G
= 10
W
20
t
r
*5
Turn – off delay time
Fall time
40
t
d(off)
*5
50
t
f
l
Gate Charge characteristics
(T
a
= 25°C)
Values
Typ.
5.7
Parameter
Symbol
Conditions
Unit
nC
Min.
Max.
*5
Total gate charge
–
–
–
–
–
–
Q
g
V
DD
⋍
10, I
D
=3.5A
V
GS
= 4.5V
*5
Gate – Source charge
Gate – Drain charge
1.1
Q
gs
*5
0.9
Q
gd
l
Body diode electrical characteristics
(Source-Drain)(T
a
= 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
0.8
Inverse diode continuous,
forward current
*1
T
a
= 25°C
V
GS
= 0V, I
s
= 0.8A
–
–
–
–
A
V
I
S
*5
Forward voltage
1.2
V
SD
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.B
3/11
Data Sheet
RUL035N02
l
Electrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
120
100
Operation in this area
is limited by R
DS
(on)
( V
GS
= 10V
）
P
W
= 100
m
s
100
80
60
40
20
0
10
P
W
= 1ms
1
P
W
= 10ms
DC Operation
0.1
0.01
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
0.1
1
10
100
0
50
100
150
200
Drain – Source Voltage : V
DS
[V]
Junction Temperature : Tj [
°
C]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maxmum Power
dissipation
1000
10
T
a
=25ºC
T
a
=25ºC
Single Pulse
Single Pulse
1
100
10
1
top
D=1
D=0.5
D=0.1
D=0.05
D=0.01
0.1
0.01
bottom Signle
Rth(ch-a)=125ºC/W
Rth(ch-a)(t)=r(t)
×
Rth(ch-a)
Mounted on ceramic board
(30mm
×
30mm
×
0.8mm)
0.001
0.0001
0.01
1
100
0.0001
0.01
1
100
Pulse Width : P
W
[s]
Pulse Width : P
W
[s]
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.B
4/11
Data Sheet
RUL035N02
l
Electrical characteristic curves
Fig.6 Typical Output Characteristics(II)
Fig.5 Typical Output Characteristics(I)
T
a
=25ºC
Pulsed
T
a
=25ºC
Pulsed
V
GS
=4.5V
V
GS
=2.5V
V
GS
=4.5V
3
2
1
0
3
V
GS
=1.5V
V
GS
=1.8V
V
GS
=2.5V
V
GS
=1.8V
2
V
GS
=1.5V
V
GS
=1.3V
V
GS
=1.2V
1
V
GS
=1.3V
V
GS
=1.1V
V
GS
=1.1V
0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
Drain – Source Voltage : V
DS
[V]
Drain – Source Voltage : V
DS
[V]
Fig.7 Breakdown Voltage
vs. Junction Temperature
Fig.8 Typical Transfer Characteristics
60
40
20
0
V
GS
= 0V
I
D
= 1mA
pulsed
-50
0
50
100
150
Junction Temperature : T
j
[
°
C
]
Gate – Source Voltage : V
GS
[V]
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.B
5/11
Data Sheet
RUL035N02
l
Electrical characteristic curves
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Fig.10 Transconductance vs. Drain Current
100
10
1
2
V
DS
= 10V
Pulsed
V
DS
= 10V
I
D
= 1mA
pulsed
T
a
=
–
25ºC
T
a
=25ºC
T
a
=75ºC
T
a
=125ºC
1
0
0.1
0.01
0.1
1
10
-50
0
50
100
150
Junction Temperature : T
j
[
°
C
]
Drain Current : I
D
[A]
Fig.11 Drain CurrentDerating Curve
Fig.12 Static Drain – Source On – State
Resistance vs. Gate Source Voltage
0
1.2
1
0.8
0.6
0.4
0.2
0
-25
0
25
50
75 100
125 150
Gate – Source Voltage : V
GS
[V]
Junction Temperature : T
j
[ºC]
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.B
6/11
Data Sheet
RUL035N02
l
Electrical characteristic curves
Fig.13 Static Drain – Source On – State
Resistance vs. Drain Current(I)
Fig.14 Static Drain – Source On – State
Resistance vs. Junction Temperature
60
50
40
30
20
10
0
V
GS
= 10V
I
D
=3.5A
pulsed
-50 -25
0
25 50 75
100 125 150
Drain Current : I
D
[A]
Junction Temperature : T
j
[ºC]
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.B
7/11
Data Sheet
RUL035N02
l
Electrical characteristic curves
Fig.15 Static Drain – Source On – State
Resistance vs. Drain Current(II)
Fig.16 Static Drain-Source On-State
Resistance vs. Drain Current(III)
Drain Current : I
D
[A]
Drain Current : I
D
[A]
Fig.18 Static Drain – Source On – State
Resistance vs. Drain Current(V)
Fig.17 Static Drain – Source On – State
Resistance vs. Drain Current(IV)
Drain Current : I
D
[A]
Drain Current : I
D
[A]
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.B
8/11
Data Sheet
RUL035N02
l
Electrical characteristic curves
Fig.19 Typical Capacitance
vs. Drain – Source Voltage
Fig.20 Switching Characteristics
Drain – Source Voltage : V
DS
[V]
Drain Current : I
D
[A]
Fig.22 Source Current
Fig.21 Dynamic Input Characteristics
vs. Source Drain Voltage
Source-Drain Voltage : V
SD
[V]
Total Gate Charge : Q
g
[nC]
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.B
9/11
Data Sheet
RUL035N02
l
Measurement circuits
Fig.1-1 Switching
Time Measurement Circuit
Fig.1-2
ꢀ
Switching Waveforms
Fig.2-1 Gate
Charge Measurement Circuit
Fig.2-2 Gate
Charge Waveform
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.B
10/11
Data Sheet
RUL035N02
l
Dimensions
(Unit : mm)
D
A
e
TUMT6
b
c
x
S A
e
y
S
S
b2
Patterm of terminal position areas
MILIMETERS
MAX
INCHES
DIM
MIN
–
MIN
–
0
0.028
0.01
0.005
0.075
0.063
MAX
0.033
0.004
0.032
0.016
0.009
0.083
0.071
A
A1
A2
b
c
D
0.85
0.10
0.82
0.40
0.22
2.10
1.80
0.00
0.72
0.25
0.12
1.90
1.60
E
0.65
0.20
0.03
0.01
e
H
E
L
2.00
2.20
0.079
0.087
Lp
x
y
–
–
–
0.40
0.10
0.10
–
–
–
0.016
0.004
0.004
MILIMETERS
MAX
1.70
INCHES
0.067
DIM
MIN
MIN
MAX
e1
b2
l1
–
–
0.50
0.50
–
–
0.02
0.02
Dimension in mm/inches
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.B
11/11
Notice
N o t e s
1) The
information contained herein is subject to change without notice.
2) Before
you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although
ROHM is continuously working to improve product reliability and qualit
y
,
s
emicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples
of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The
technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitl
y
,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The
Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The
Products specified in this document are not designed to be radiation tolerant.
8) For
use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do
not use our Products in applications requiring extremely high reliabilit
y
,
s
uch as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM
shall have no responsibility for any damages or injury arising
from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM
has used reasonable care to ensur
the accuracy of the information contained
in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please
use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibilit
y
,
p
lease contact a
ROHM sales office. ROHM shall have
no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When
providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign
T
r
ade Act.
14) This
document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
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Support System
© 2013
ROHM Co., Ltd. All rights reserved.
R1102
A
