ROHM-Semicon-RUM003N02T2L
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RUM003N02
Transistor
1.8V Drive
Nch MOSFET
RUM003N02
z
Dimensions
(Unit : mm)
z
Structure
Silicon N-channel
MOSFET
VMT3
z
Applications
Switching
(1)Base(IN)(Gate)
z
Features
1) Low on-resistance.
(2)Emitter(GND)(Source)
(3)Collector(OUT)(Drain)
Abbreviated symbol : QT
2) Fast switching speed.
3) Low voltage drive (1.8V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
z
Packaging specifications
z
Equivalent circuit
Drain
Package
Code
Taping
T2L
Type
Basic ordering unit
(pieces)
8000
RUM003N02
Gate
∗
2
z
Absolute maximum ratings
(
T
a
=25
°
C)
∗
1
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Limits
Unit
V
Source
∗
1 ESD PROTECTION DIODE
∗
2 BODY DIODE
V
DSS
GSS
20
8
V
V
Continuous
Pulsed
I
D
300
mA
mA
mW
°
C
Drain current
1
∗
I
DP
600
2
∗
Total power dissipation
Channel temperature
P
D
150
Tch
150
Range of storage temperature
Tstg
−
55 to
+
150
°
C
∗
1
Pw
≤
10
µ
s, Duty cycle
≤
1%
∗
2
Each terminal mounted on a recommended land
z
Thermal resistance
Parameter
Symbol
Rth(ch-a)
∗
Limits
833
Unit
Channel to ambient
∗
Each terminal mounted on a recommended land
°
C / W
Rev.B
1/3
RUM003N02
Transistor
z
Electrical characteristics
(
T
a
=25
°
C)
Symbol Min.
Typ.
−
Max.
10
−
Unit
µ
A
V
Conditions
V
GS
=
8V, V
DS
=
0V
Parameter
I
GSS
(BR)DSS
DSS
GS(th)
−
20
−
Gate-source leakage
V
−
I
D
=
1mA, V
GS
=
0V
Drain-source breakdown voltage
I
−
1.0
1.0
1.0
1.2
1.4
−
µ
A
V
V
V
DS
=
20V, V
GS
=
0V
Zero gate voltage drain curren
t
V
0.3
−
−
DS
=
10V, I
=
1mA
D
Gate threshold voltage
0.7
0.8
1.0
−
Ω
I
I
I
I
D
D
D
D
=
300mA, V
GS
=
4.0V
=
300mA, V
GS
=
2.5V
=
300mA, V
GS
=
1.8V
=
300mA, V
DS
=
10V
DS
=
10V
Static drain-source on-state
resistance
∗
R
DS(on)
−
Ω
−
Ω
∗
|Y
fs
|
400
−
ms
pF
pF
pF
ns
ns
ns
ns
Forward transfer admittance
Input capacitance
C
iss
oss
rss
d(on)
25
10
10
5
−
V
V
C
−
−
GS
=
0V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
−
−
f
=
1MHz
∗
t
−
−
I
D
=
150mA, V
DD
10V
∗
∗
∗
t
r
−
10
15
10
−
V
GS
=
4.0V
Turn-off delay time
t
d(off)
−
−
R
L
=
67
Ω
Fall time
t
f
−
−
R
G
=
10
Ω
∗
Pulsed
z
Body diode characteristics
(Source-drain) (
T
a
=25
°
C)
Parameter
Symbol Min.
Typ. Max.
Conditions
Unit
∗
Forward voltage
V
SD
−
−
1.2
V
I
S
= 100mA, V
GS
=0V
∗
Pulsed
z
Electrical characteristic curves
10
10
1
V
DS
=
10V
V
GS
=
4V
V
GS
=
2.5V
Pulsed
Pulsed
Pulsed
0.1
0.01
Ta
=
125
°
C
75
°
C
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
−
25
°
C
−
25
°
C
Ta
=
125
°
C
1
1
75
°
C
25
°
C
−
25
°
C
0.001
0.0001
0.00001
0.1
0.01
0.1
0.01
0.0
0.5
1.0
1.5
0.1
DRAIN CURRENT
: I
1
0.1
DRAIN CURRENT
: I
D
(A)
1
GATE-SOURCE VOLTAGE
: V
GS
(V)
D
(A)
Fig.1 Typical
transfer characteristics
Fig.2 Static
drain-source on-state
Fig.3 Static
drain-source on-state
resistance vs. drain current (
ΙΙ
)
resistance vs. drain current (
Ι
)
Rev.B
2/3
RUM003N02
Transistor
10
100
10
1
1
V
GS
=
1.8V
V
GS
=
0V
Ta
=
25
°
C
Pulsed
Pulsed
f
=
1MH
Z
V
GS
=
0V
Ta
=
125
°
C
75
°
C
25
°
C
−
25
°
C
C
iss
Ta
=
125
°
C
75
°
C
25
°
C
−
25
°
C
0.1
1
C
oss
C
rss
0.1
0.01
0.01
0.0
0.1
DRAIN CURRENT
: I
1
0.01
0.1
1
10
100
0.5
1
1.5
D
(A)
DRAIN-SOURCE VOLTAGE
: V
DS
(V)
SOURCE-DRAIN VOLTAGE
: V
SD
(V)
Fig.4 Static
drain-source on-state
Fig.6 Typical
capacitance vs.
drain-source voltage
Fig.5 Source
current vs.
source-drain voltage
resistance vs. drain current (
ΙΙΙ
)
1000
100
Ta
=
25
°
C
V
V
DD
=
10V
GS
=
4V
R
G
=
10
Ω
Pulsed
t
d(off)
t
t
d
f
(on)
10
1
t
r
0.01
0.1
1
DRAIN CURRENT
: I
D
(A)
Fig.7 Switching
characteristics
z
Switching characteristics measurement circuit
Pulse width
90%
I
D
50%
10%
50%
V
GS
V
GS
DS
V
DS
R
L
D.U.T.
10%
R
G
V
10%
90%
V
DD
90%
t
d (on)
t
r
t
f
t
d (off)
t
off
t
on
Fig.8 Switching
time measurement circuit
Fig.9 Switching
time waveforms
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party’s intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer’s right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machiner
y
, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliabilit
y
.
H
owever, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammabilit
y
,
a
nd fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM
Customer Support System
TEL : +81-75-311-2121
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Copyright ©
2008 ROHM CO.,
L
T
D.
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
Appendix1-Rev2.0
