ROHM-Semicon-RYE002N05TCL
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0.9V Drive Nch MOSFET
RYE002N05
z
Structure
z
Dimensions
(Unit : mm)
Silicon N-channel MOSFET
EMT3
(SC-75A)
<SO
T
–
416>
z
Features
1) High speed switing.
2) Small package(EMT3).
3) Ultra low voltage drive(0.9V drive).
Abbreviated symbol : QJ
z
Application
Switching
z
Packaging specifications
z
Inner circuit
(3)
Package
Taping
TCL
3000
{
Type
Code
Basic ordering unit (pieces)
RYE002N05
z
Absolute maximum ratings
(Ta = 25
°
C)
Parameter S
bol
Drain-source voltage
(1) Source
(2) Gate
(3) Drain
(2)
(1)
Limits
50
Un
V
∗
1 ESD PROTECTION DIODE
∗
2 BODY DIODE
V
GSS
I
D
Gate-source voltage
±
8
V
Continuous
Pulsed
±
200
800
125
mA
mA
mA
mA
mW
°
C
Drain current
*1
I
DP
Cont
ou
lsed
I
S
Source current
(Body Diode)
*1
2
I
800
Power dissipation
D
150
Channel temperature
T
h
Tstg
150
Range of sto
temperature
*1 Pw
≤
10
µ
s, D
cycle
1%
−
55 to +150
°
C
*2 Each te
unted on a recommended land.
z
hermal resistance
Parameter
Symbol
Rth (ch-a)
*
Limits
833
Unit
Channel to Ambient
°
C / W
* Each terminal mounted on a recommended land.
©20
1
1
ROHM Co., Ltd. All rights reserved.
2011.05 –
Rev.B
1/5
Data Sheet
RYE002N05
ꢀ
z
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
I
GSS
Min.
Typ.
–
Max.
Unit
µ
A V
GS
=
±
8V, V
DS
=0V
I
D
=1mA, V
GS
=0V
µ
A V
DS
=50V, V
GS
=0V
Conditions
Gate-source leakage
–
±
10
Drain-source breakdown voltage
V
(BR)DSS
50
–
–
1
V
Zero gate voltage drain current
Gate threshold voltage
I
DSS
–
–
V
GS (th)
0.3
–
0.8
2.2
2.4
2.8
3.3
9.0
–
V
Ω
S
V
DS
=10V, I
D
=1mA
–
1.6
1.7
2.0
2.2
3.0
–
I
D
=200mA, V
GS
=4.5V
I
D
=200mA, V
GS
=2.5V
I
D
=200mA, V
GS
=1.5V
I
D
=100mA, V
GS
=1.2V
I
D
=10mA, V
GS
=0.9V
I
D
=200mA, V
DS
=10V
–
*
Static drain-source on-state
resistance
R
DS (on)
–
–
–
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Y
fs
l
0.2
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
26
6
–
pF V
DS
=10V
–
pF V
GS
=0V
3
–
pF f=1MHz
5
–
ns
=10
A,
DD
25V
ns
4.5V
ns
50
Ω
ns R
G
=10
Ω
*
*
*
*
8
–
Turn-off delay time
Fall time
t
d(off)
t
f
17
43
–
–
*Pulsed
z
Body diode characteristics
(Source-Drain) (Ta = 25
°
C)
Parameter
Forward Voltage
Symbol
Min.
–
.
–
Max. Unit
1.2
Con
itions
*
V
SD
=200mA, V
GS
=0V
*Pulsed
2/5
2011.05 –
Rev.B
©20
1
1
ROHM Co., Ltd. All rights reserved.
Data Sheet
RYE002N05
z
Electrical characteristic curves
(Ta = 25
°
C)
0.2
0.1
0
0.2
1
0.1
V
DS
= 10V
Pulsed
V
GS
= 4.5V
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
= 1.5V
V
GS
= 1.2V
T
a
= 125°C
V
GS
= 2.5V
V
GS
= 1.5V
V
GS
= 1.2V
T
a
= 75°C
T
a
= 25°C
V
GS
= 0.9V
0.1
V
GS
= 0.9V
V
GS
= 0.8V
T
a
=
−
25°C
T
a
=25°C
Pulsed
V
GS
= 0.8V
0.01
0.001
T
a
=25°C
Pulsed
V
GS
= 0.7V
8 10
V
GS
= 0.7V
0.8
0
0
0.4
0.6
0.8
1
0
0.2
0.4
0.6
1
0
2
4
6
DRAIN-SOURCE VOLTAGE : V
DS
[V]
DRAIN-SOURCE VOLTAGE : V
DS
[V]
GA
E VOLTAGE : V
GS
[V]
Fig.3
al Transfer Characteristics
Fig.1 Typical Output Characteristics(
Ⅰ
)
Fig.2 Typical Output Characteristics(
Ⅱ
)
10000
1000
100
10000
1000
10
10000
100
V
GS
= 4.5V
Pulsed
T
a
= 25°C
Pulsed
V
G
5V
P
sed
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
−
25°C
V
GS
= 0.9V
V
GS
= 1.2V
V
GS
= 1.5V
V
GS
= 2.5V
V
GS
= 4.5V
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
−
25°C
0.001
0.01
0.1
1
001
0.01
0.1
1
0.001
0.01
0.1
1
10
DRAIN-CURRENT : I
D
[A]
DRAIN
I
D
[A]
DRAIN-CURRENT : I
D
[A]
Fig.4 Static
Drain-Source On-State
Resistance vs. Drain Curren
Ⅰ
)
Fig.5 Static
Dr
n-State
Fig.6 Static
Drain-Source On-State
Resistance
ain Current
(
Ⅱ
)
Resistance vs. Drain Current
(
Ⅲ
)
10000
1000
100
1000
100
10000
10
100
V
GS
= 1.2V
Pulsed
V
GS
= 0.9V
Pulsed
V
GS
= 1.5V
Pulsed
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
−
25°C
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
−
25°C
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
−
25°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
DRAIN-CURRENT : I
D
[A]
DRAIN-CURRENT : I
D
[A]
DRAIN-CURRENT : I
D
[A]
Fig.7 Static
Drain-Source On-State
Resistance vs. Drain Current
(
Ⅳ
)
Fig.8 Static
Drain-Source On-State
Fig.9 Static
Drain-Source On-State
Resistance vs. Drain Current
(
Ⅴ
)
Resistance vs. Drain Current
(
Ⅵ
)
©20
1
1
ROHM Co., Ltd. All rights reserved.
2011.05 –
Rev.B
3/5
Data Sheet
RYE002N05
10
1
5000
4000
3000
2000
1000
0
V
DS
= 10V
V
GS
=0V
Pulsed
T
a
=25°C
Pulsed
Pulsed
I
D
= 0.01A
I
D
= 0.20A
1
0.1
T
a
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
=
−
25°C
T
a
=
−
25°C
T
a
=25°C
T
a
=75°C
T
a
=125°C
0.1
0.01
0.01
0.1
DRAIN-CURRENT : I
D
[A]
1
0
0.5
1
1.5
0
2
4
6
8
SOURCE-DRAIN VOLTAGE : V
SD
[V]
GATE-
RCE VOLTAGE : V
GS
[V]
Fig.12
rain-Source On-State
Fig.10 Forward Transfer Admittance
vs. Drain Current
Fig.11 Reverse
Drain Current
vs. Sourse-Drain Voltage
ce vs. Gate Source Voltage
1000
100
10
0
T
a
=25°C
T
a
=25°C
f=1MHz
V
GS
=0
4
V
DD
=25V
V
GS
=4.5V
R
G
=10
Ω
Pulsed
t
d(off)
t
f
3
2
1
0
100
1
1
C
iss
T
a
=25°C
V
DD
=25V
I
D
= 0.2A
R
G
=10
Ω
Pulsed
rss
C
oss
t
d(on)
t
r
0.1
1
0.01
0.1
1
10
100
0.01
1
0.5
1
5
DRAIN-CURRENT : I
D
[A]
Fig.13 Switching
Characteristics
TOTAL GATE CH
GE :
nC
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.14 Ty
nce
vs.
Voltage
Fig.15 Typical
Capacitance
vs. Drain-Source Voltage
©20
1
1
ROHM Co., Ltd. All rights reserved.
2011.05 –
Rev.B
4/5
Data Sheet
RYE002N05
ꢀ
z
Measurement circuits
Pulse width
90%
V
GS
I
D
V
D
S
50%
10%
50%
V
V
GS
DS
R
L
10%
10%
90%
D.U.T.
V
DD
R
G
90%
t
d(on)
t
d(off)
t
r
t
f
t
on
t
off
Fig.1-1 Switching
time measurement circuit
Fig.1-2 Switching
waveforms
z
Notice
This product might cause chip aging and breakdown under the larg
electrified enviro
ent. Please consider to design
ESD protection circuit.
5/5
2011.05 –
Rev.B
©20
1
1
ROHM Co., Ltd. All rights reserved.
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ined herein
illustrate the standard usage and operations of the Products. The peripheral cond
ns must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified
his document.
However, should you incur any damage arising from any inaccuracy
mis
rint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show
ical functions of and
examples of application circuits for the Products. ROHM d
not grant you, expli
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implicitly, any license to use or exercise intellectual property
r ot
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an
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from the
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odu
ar
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nufactured to be used with any equipment, device or
s
which requires an extremely
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uman life or create a risk of human injury (such as a medical
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tion
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© 2011
ROHM Co., Ltd. All rights reserved.
R1120
A
