ROHM-Semicon-SCT2160KEC
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SCT2160KE
Datasheet
N-channel SiC power MOSFET
l
Outline
TO-247
TO-247N
V
DSS
1200V
160mΩ
22A
R
DS(on)
(Typ.)
I
D
(3)
(2)
P
D
165W
(1)
l
Inner circuit
l
Features
(1) Gate
(2) Drain
(3) Source
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
*1 Body Diode
l
Packaging specifications
*1
5) Simple to drive
TO-247 TO-247N
6) Pb-free lead plating ; RoHS compliant
Package
Packing
Tube
Reel size (mm)
–
–
l
Application
Tape width (mm)
Type
•
Solar inverters
•
DC/DC converters
•
Induction heating
•
Motor drives
Basic ordering unit (pcs)
30
Packing code
Marking
C
C11
SCT2160KE
l
Absolute maximum ratings
(Ta = 25°C)
Parameter
Symbol
V
DSS
Value
1200
Unit
V
Drain – Source voltage
*2
T
c
= 25°C
Continuous drain current
T
c
= 100°C
22
A
I
D
*2
16
A
I
D
*3
Pulsed drain current
55
A
I
D,pulse
V
GSS
Gate – Source voltage (DC)
Gate – Source surge voltage (T
surge
˂ 300nsec)
Power dissipation
(T
c
= 25°C)
Junction temperature
-6 to 22
-10 to 26
165
V
*4
V
V
GSS-surge
P
D
T
j
W
°C
°C
175
T
stg
Range of storage temperature
-55 to +175
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Datasheet
SCT2160KE
l
Electrical characteristics
(T
a
= 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
Drain – Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 1200V, V
GS
= 0V
1200
–
–
V
Zero gate voltage
drain current
I
DSS
T
j
= 25°C
–
1
2
10
–
μA
T
j
= 150°C
–
–
I
GSS
+
I
GSS
–
V
GS
=
+
22V, V
DS
= 0V
V
GS
= -6V, V
DS
= 0V
Gate – Source leakage current
Gate – Source leakage current
Gate threshold voltage
–
100
-100
4.0
nA
nA
V
–
–
V
GS (th)
V
DS
= V
GS
, I
D
= 2.5mA
1.6
2.8
l
Thermal resistance
Values
Parameter
Symbol
R
thJC
Unit
Min.
Typ.
Max.
0.91
50
Thermal resistance, junction – case
–
–
–
0.70
°C/W
°C/W
°C
R
thJA
T
sold
Thermal resistance, junction – ambient
Soldering temperature, wavesoldering for 10s
–
–
265
l
Typical Transient Thermal Characteristics
Symbol
R
th1
Value
Unit
Symbol
Value
Unit
C
th1
C
th2
C
th3
9.61E-02
4.04E-01
1.96E-01
1.55E-03
5.23E-03
8.33E-02
R
th2
K/W
Ws/K
R
th3
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Datasheet
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Electrical characteristics
(T
a
= 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
V
GS
= 18V, I
D
= 7A
T
j
= 25°C
Static drain – source
on – state resistance
*5
–
–
–
–
–
–
–
160
226
13.7
2.4
208
mΩ
R
DS(on)
T
j
= 125°C
–
–
–
–
–
–
R
G
Gate input resistance
Transconductance
f = 1MHz, open drain
V
DS
= 10V, I
D
= 7A
V
GS
= 0V
Ω
*5
S
g
fs
C
iss
C
oss
C
rss
Input capacitance
1200
45
V
DS
= 800V
Output capacitance
Reverse transfer capacitance
pF
pF
f = 1MHz
7
V
GS
= 0V
V
DS
= 0V to 500V
Effective output capacitance,
energy related
C
o(er)
–
71
–
*5
V
DD
= 400V, I
D
= 7A
V
GS
= 18V/0V
R
L
= 57Ω
Turn – on delay time
Rise time
–
–
–
–
23
25
67
27
–
–
–
–
t
d(on)
*5
t
r
ns
*5
Turn – off delay time
Fall time
t
d(off)
*5
R
G
= 0Ω
t
f
V
DD
= 600V, I
D
=7A
V
GS
= 18V/0V
R
G
= 0Ω, L=500μH
*E
on
includes diode
reverse recovery
*5
Turn – on switching loss
Turn – off switching loss
–
–
126
55
–
–
E
on
μJ
*5
E
off
l
Gate Charge characteristics
(T
a
= 25°C)
Values
Typ.
62
Parameter
Symbol
Conditions
Unit
Min.
Max.
*5
V
DD
= 400V
I
D
= 7A
Total gate charge
–
–
–
–
–
–
–
–
Q
g
*5
Gate – Source charge
Gate – Drain charge
Gate plateau voltage
14
nC
V
Q
gs
*5
V
GS
= 18V
20
Q
gd
V
(plateau)
V
DD
= 400V,
I
D
= 7A
9.6
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Datasheet
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
–
Max.
Inverse diode continuous,
forward current
*2
–
–
22
55
A
A
I
S
T
c
= 25°C
Inverse diode direct current,
pulsed
*3
–
I
SM
*5
V
GS
= 0V, I
S
= 7A
Forward voltage
–
–
–
–
4.1
26
–
–
–
–
V
ns
nC
A
V
SD
*5
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
t
rr
I
F
= 7A, V
R
= 400V
di/dt = 160A/μs
*5
39
Q
rr
*5
3.0
I
rrm
*1 Tolerances of dimensions and packing specifications slightly differ between TO-247 and TO-247N,
which is unlikely to influence compatibility for mounting. Please refer to corresponding
specifications of dimensions for more details.
*2 Limited only by maximum temperature allowed.
*3 PW
10μs, Duty cycle
1%
*4 Example of acceptable Vgs waveform
*5 Pulsed
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
180
160
140
120
100
80
100
P
W
= 100
m
s
P
W
= 1ms
P
W
= 10ms
P
W
= 100ms
10
1
60
Operation in this area
is limited by R
DS
(on)
40
T
a
=25ºC
Single Pulse
20
0.1
0
0.1
1
10
100
1000 10000
25
75
125
175
Case Temperature : T
C
[ºC]
Drain – Source Voltage : V
DS
[V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
1
0.1
0.01
T
a
=25ºC
Single Pulse
0.1
Pulse Width : P
W
[s]
0.001
0.0001 0.001
0.01
1
10
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Electrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II)
20
10
20V
T
a
=25ºC
18
20V
18V
9
8
7
6
5
4
3
2
1
0
Pulsed
18V
T
a
=25ºC
Pulsed
16
16V
14V
16V
12V
14
14V
12V
12
10V
10
8
6
10V
4
V
GS
= 8V
2
V
GS
= 8V
0
0
1
2
3
4
5
0
2
4
6
8
10
Drain – Source Voltage : V
DS
[V]
Drain – Source Voltage : V
DS
[V]
Fig.6 T
j
= 150ºC Typical Output
Characteristics(I)
Fig.7 T
j
= 150ºC Typical Output
Characteristics(II)
20
10
20V
18V
20V
18V
16V
14V
12V
18
16
14
12
10
8
9
8
7
6
5
4
3
2
1
0
10V
16V
14V
12V
10V
V
GS
= 8V
V
GS
= 8V
6
4
T
a
=150ºC
Pulsed
T
a
=150ºC
Pulsed
2
0
0
2
4
6
8
10
0
1
2
3
4
5
Drain – Source Voltage : V
DS
[V]
Drain – Source Voltage : V
DS
[V]
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Electrical characteristic curves
Fig.8 Typical Transfer Characteristics (I)
Fig.9 Typical Transfer Characteristics (II)
10
20
18
16
14
12
10
8
V
DS
= 10V
Plused
V
DS
= 10V
Plused
1
T
a
=150ºC
T
a
=75ºC
T
a
=25ºC
0.1
T
a
=
–
25ºC
T
a
=150ºC
T
a
=75ºC
T
a
=25ºC
T
a
=
–
25ºC
6
0.01
4
2
0.001
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Gate – Source Voltage : V
GS
[V]
Gate – Source Voltage : V
GS
[V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Fig.11 Transconductance vs. Drain Current
5
10
V
DS
= 10V
I
D
= 3mA
V
DS
= 10V
Plused
4.5
4
3.5
3
1
2.5
2
0.1
T
a
=150ºC
T
a
=75ºC
T
a
=25ºC
T
a
=
–
25ºC
1.5
1
0.5
0
0.01
0.01
0.1
1
10
-50
0
50
100
150
200
Junction Temperature : T
j
[ºC]
Drain Current : I
D
[A]
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Datasheet
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Electrical characteristic curves
Fig.12 Static Drain – Source On – State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain – Source On – State
Resistance vs. Junction Temperature
0.4
0.35
0.3
0.6
V
GS
= 18V
Plused
T
a
=25ºC
Pulsed
0.5
0.4
0.3
0.2
0.1
0
0.25
0.2
I
D
= 15A
I
D
= 15A
0.15
0.1
I
D
= 7A
I
D
= 7A
0.05
0
-50
0
50
100
150
200
6
8
10 12 14 16 18 20 22
Gate – Source Voltage : V
GS
[V]
Junction Temperature : T
j
[ºC]
Fig.14 Static Drain – Source On – State
Resistance vs. Drain Current
1
V
GS
= 18V
Plused
T
a
=150ºC
T
a
=125ºC
T
a
=75ºC
T
a
=25ºC
T
a
=
–
25ºC
0.1
0.1
1
10
100
Drain Current : I
D
[A]
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Electrical characteristic curves
Fig.15 Typical Capacitance
vs. Drain – Source Voltage
Fig.16 C
OSS
Stored Energy
20
10000
1000
100
T
a
=25ºC
18
16
14
12
10
8
C
iss
C
oss
6
10
4
T
a
=25ºC
f = 1MHz
V
GS
= 0V
C
rss
2
1
0
0.1
1
10
100
1000
0
200
400
600
800
Drain – Source Voltage : V
DS
[V]
Drain – Source Voltage : V
DS
[V]
Fig.18 Dynamic Input Characteristics
Fig.17 Switching Characteristics
10000
20
T
a
= 25ºC
V
DD
= 400V
I
D
= 7A
T
a
= 25ºC
V
DD
= 400V
V
GS
= 18V
R
G
=
0Ω
t
f
Pulsed
1000
100
10
15
t
d(off)
Pulsed
10
5
t
d(on)
t
r
1
0
0.1
1
10
100
0
10
20
30
40
50
60
70
Total Gate Charge : Q
g
[nC]
Drain Current : I
D
[A]
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Electrical characteristic curves
Fig.19 Typical Switching Loss
vs. Drain – Source Voltage
Fig.20 Typical Switching Loss
vs. Drain
Current
250
800
T
a
= 25ºC
V
DD
= 600V
V
GS
= 18V/0V
R
G
=
0Ω
T
a
= 25ºC
I
D
= 7A
V
GS
= 18V/0V
R
G
=
0Ω
L=500μH
700
600
500
400
300
200
100
0
200
150
100
50
E
on
L=500μH
E
on
E
off
E
off
0
0
200
400
600
800
1000
0
5
10
15
20
25
Drain – Source Voltage : V
DS
[V]
Drain Current : I
D
[A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
350
300
250
200
150
100
50
T
a
= 25ºC
V
DD
= 600V
I
D
= 7A
V
GS
= 18V/0V
L=500μH
E
on
E
off
0
0
5
10
15
20
25
30
External Gate Resistance : R
G
[
W
]
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Datasheet
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Electrical characteristic curves
Fig.22 Inverse Diode
Forward Current
vs. Source – Drain Voltage
Fig.23 Reverse Recovery Time
vs.Inverse Diode
Forward Current
100
1000
100
10
T
a
=25ºC
V
GS
=0V
Pulsed
di / dt = 160A / μs
V
R
= 400V
V
GS
= 0V
10
Pulsed
1
T
a
=150ºC
T
a
=75ºC
T
a
=25ºC
T
a
=
–
25ºC
0.1
0.01
0
1
2
3
4
5
6
7
8
1
10
100
Source – Drain Voltage : V
SD
[V]
Inverse Diode
Forward Current : I
S
[A]
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Measurement circuits
Fig.1-1 Switching
Time Measurement Circuit
Fig.1-2
ꢀ
Switching Waveforms
Fig.2-2 Gate
Charge Waveform
Fig.3-2 Switching
Waveforms
Fig.2-1 Gate
Charge Measurement Circuit
Fig.3-1 Switching
Energy Measurement Circuit
E
on
= I
D
×
V
DS
E
off
= I
D
×
V
DS
V
surge
Same type
device as
D.U.T.
I
rr
V
DS
D.U.T.
I
D
I
D
Fig.4-1 Reverse
Recovery Time Measurement Circuit
Fig.4-2 Reverse
Recovery Waveform
D.U.T.
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Notice
N o t e s
1) The
information contained herein is subject to change without notice.
2) Before
you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although
ROHM is continuously working to improve product reliability and qualit
y
,
s
emicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples
of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The
technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitl
y
,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The
Products specified in this document are not designed to be radiation tolerant.
7) For
use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do
not use our Products in applications requiring extremely high reliabilit
y
,
s
uch as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM
shall have no responsibility for any damages or injury arising
from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM
has used reasonable care to ensure the accuracy of the information contained
in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please
use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibilit
y
,
p
lease contact a
ROHM sales office. ROHM shall have
no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When
providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign
T
r
ade Act.
13) This
document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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