ROHM-Semicon-SCT3120ALGC11
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SCT3120AL
Datasheet
N-channel SiC power MOSFET
Outline
TO-247N
V
DSS
650V
120m
21A
R
DS(on)
(Typ.)
I
D
(3)
(2)
P
D
103W
(1)
Inner circuit
(2)
Features
(1) Gate
(2) Drain
(3) Source
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
*1
(1)
*1 Body Diode
(3)
Packaging specifications
5) Simple to drive
Packing
Tube
6) Pb-free lead plating ; RoHS compliant
Reel size (mm)
–
Tape width (mm)
Type
–
30
Application
Basic ordering unit (pcs)
・
Solar inverters
Taping code
Marking
C11
・
DC/DC converters
・
Switch mode power supplies
・
Induction heating
・
Motor drives
SCT3120AL
Absolute maximum ratings
(T
a
= 25°C)
Parameter
Symbol
V
DSS
Value
650
Unit
V
Drain – Source voltage
*1
T
c
= 25°C
T
c
= 100°C
21
A
I
D
Continuous drain current
*1
15
A
I
D
*2
Pulsed drain current
52
A
I
D,pulse
V
GSS
Gate – Source voltage (DC)
V
4 to +22
4 to +26
0 / +18
175
*4
Gate-Source Surge Voltage (t
surge
< 300nsec)
Recommended Drive Voltage
Junction temperature
V
V
GSS_surge
V
GS_op
T
j
V
°C
°C
T
stg
Range of storage temperature
55 to
175
© 201
6
ROHM Co., Ltd. All rights reserved.
2018.04 –
Rev.E
1/12
Datasheet
SCT3120AL
Thermal resistance
Values
Typ.
Parameter
Symbol
R
thJC
Unit
Min.
–
Max.
1.46
Thermal resistance, junction – case
1.12
C/W
Electrical characteristics
(T
a
= 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
–
Drain – Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 650V, V
GS
= 0V
–
Zero gate voltage
drain current
I
DSS
T
j
= 25°C
–
1
2
–
10
–
A
T
j
= 150°C
–
–
I
GSS
I
GSS
V
GS
=
22V, V
DS
= 0V
V
GS
=
4V, V
DS
= 0V
Gate – Source leakage current
Gate – Source leakage current
Gate threshold voltage
100
100
5.6
nA
nA
V
–
–
V
GS (th)
V
DS
= 10V, I
D
= 3.33mA
2.7
–
V
GS
= 18V, I
D
= 6.7A
Static drain – source
on – state resistance
*3
T
j
= 25°C
R
DS(on)
–
–
–
120
158.4
18
156
m
T
j
= 125°C
–
–
R
G
Gate input resistance
f = 1MHz, open drain
© 201
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ROHM Co., Ltd. All rights reserved.
2018.04 –
Rev.E
2/12
Datasheet
SCT3120AL
Electrical characteristics
(T
a
= 25°C)
Values
Typ.
2.7
Parameter
Symbol
Conditions
Unit
S
Min.
Max.
*3
V
DS
= 10V, I
D
= 6.7A
V
GS
= 0V
Transconductance
–
–
–
–
–
–
–
–
g
fs
C
iss
C
oss
C
rss
Input capacitance
460
35
V
DS
= 500V
f = 1MHz
Output capacitance
pF
pF
Reverse transfer capacitance
16
V
GS
= 0V
V
DS
= 0V to 300V
Effective output capacitance,
energy related
C
o(er)
–
70
–
*3
V
DD
= 300V, I
D
= 6.7A
V
GS
= 18V/0V
R
L
= 45
Turn – on delay time
Rise time
–
–
–
–
14
21
23
14
–
–
–
–
t
d(on)
*3
t
r
ns
*3
Turn – off delay time
Fall time
t
d(off)
*3
R
G
= 0
t
f
V
DD
= 300V, I
D
=6.7A
V
GS
= 18V/0V
*3
Turn – on switching loss
Turn – off switching loss
–
–
29
3
–
–
E
on
E
off
R
G
= 0
L=500
H
*E
on
includes diode
reverse recovery
J
*3
Gate Charge characteristics
(T
a
= 25°C)
Values
Typ.
38
Parameter
Symbol
Conditions
Unit
Min.
Max.
*3
V
DD
= 300V
I
D
= 6.7A
Total gate charge
–
–
–
–
–
–
–
–
Q
g
*3
Gate – Source charge
Gate – Drain charge
Gate plateau voltage
11
nC
V
Q
gs
*3
V
GS
= 18V
13
Q
gd
V
(plateau)
V
DD
= 300V,
I
D
= 6.7A
9.6
*1 Limited only by maximum temperature allowed.
*2 PW
10
s, Duty cycle
1%
*3 Pulsed
© 201
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ROHM Co., Ltd. All rights reserved.
2018.04 –
Rev.E
3/12
Datasheet
SCT3120AL
Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
A
Min.
–
Max.
21
Inverse diode continuous,
forward current
*1
–
–
I
S
T
c
= 25°C
Inverse diode direct current,
pulsed
*2
–
52
A
I
SM
*3
V
GS
= 0V, I
S
= 6.7A
Forward voltage
–
–
–
–
3.2
13
35
6
–
–
–
–
V
ns
nC
A
V
SD
*3
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
t
rr
I
F
= 6.7A, V
R
= 300V
*3
Q
rr
di/dt = 1100A/
s
*3
I
rrm
*4 Example of acceptable Vgs waveform
© 201
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ROHM Co., Ltd. All rights reserved.
2018.04 –
Rev.E
4/12
Datasheet
SCT3120AL
Electrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
120
1000
Operation in this area is limited by R
DS(ON)
100
80
60
40
20
0
100
10
P
W
= 100µs
P
W
= 1ms
1
P
W
= 10ms
T
a
= 25ºC
Single Pulse
P
W
= 100ms
0.1
0.1
1
10
100
1000
0
50
100
150
200
Drain – Source Voltage : V
DS
[V]
Case Temperature : T
C
[
°
C]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
10
1
0.1
0.01
T
a
= 25ºC
Single Pulse
0.001
0.0001 0.001
0.01
0.1
1
10
Pulse Width : P
W
[s]
© 201
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ROHM Co., Ltd. All rights reserved.
2018.04 –
Rev.E
5/12
Datasheet
SCT3120AL
Electrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II)
20
10
9
8
7
6
5
4
3
2
1
0
20V
18
20V
18V
16V
T
a
= 25ºC
Pulsed
18V
T
a
= 25ºC
Pulsed
14V
16
14
12
10
8
16V
14V
12V
10V
12V
6
10V
4
V
GS
= 8V
2
V
GS
= 8V
0
0
2
4
6
8
10
0
1
2
3
4
5
Drain – Source Voltage : V
DS
[V]
Drain – Source Voltage : V
DS
[V]
Fig.6 T
j
= 150ºC Typical Output
Fig.7 T
j
= 150ºC Typical Output
Characteristics(I)
Characteristics(II)
10
20
20V
20V
9
18
16
14
12
10
8
14V
18V
14V
18V
16V
10V
T
a
= 150ºC
Pulsed
8
16V
12V
7
6
5
4
3
2
1
0
12V
10V
V
GS
= 8V
6
V
GS
= 8V
4
T
a
= 150ºC
Pulsed
2
0
0
1
2
3
4
5
0
2
4
6
8
10
Drain – Source Voltage : V
DS
[V]
Drain – Source Voltage : V
DS
[V]
© 201
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ROHM Co., Ltd. All rights reserved.
2018.04 –
Rev.E
6/12
Datasheet
SCT3120AL
Electrical characteristic curves
Fig.8 Typical Transfer Characteristics (I)
Fig.9 Typical Transfer Characteristics (II)
20
18
16
14
12
10
8
100
V
DS
= 10V
Pulsed
V
DS
= 10V
Pulsed
10
1
T
a
= 150ºC
T
a
= 75ºC
T
a
= 25ºC
T
a
= 150ºC
T
a
= 75ºC
T
a
= 25ºC
T
a
=
25ºC
T
a
=
25ºC
6
0.1
4
2
0.01
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Gate – Source Voltage : V
GS
[V]
Gate – Source Voltage : V
GS
[V]
Fig.10 Gate Threshold Voltage
Fig.11 Transconductance vs. Drain Current
vs. Junction Temperature
6
10
V
DS
= 10V
I
D
= 3.33mA
V
DS
= 10V
Pulsed
5
4
3
2
1
0
1
T
a
= 150ºC
T
a
= 75ºC
T
a
= 25ºC
T
a
=
25ºC
0.1
0.1
1
10
-50
0
50
100
150
200
Junction Temperature : T
j
[ºC]
Drain Current : I
D
[A]
© 201
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ROHM Co., Ltd. All rights reserved.
2018.04 –
Rev.E
7/12
Datasheet
SCT3120AL
Electrical characteristic curves
Fig.12 Static Drain – Source On – State
Resistance vs. Gate – Source Voltage
0.5
Fig.13 Static Drain – Source On – State
Resistance vs. Junction Temperature
0.5
0.4
0.3
0.2
0.1
0
V
GS
= 18V
Pulsed
T
a
= 25ºC
Pulsed
0.4
0.3
I
D
= 14A
0.2
I
D
= 14A
I
D
= 6.7A
0.1
0
I
D
= 6.7A
6
8
10 12 14 16 18 20 22
-50
0
50
100
150
200
Gate – Source Voltage : V
GS
[V]
Junction Temperature : T
j
[ºC]
Fig.14 Static Drain – Source On – State
Resistance vs. Drain Current
1
0.1
T
a
= 150ºC
T
a
= 125ºC
T
a
= 75ºC
T
a
= 25ºC
T
a
=
25ºC
V
GS
= 18V
Pulsed
0.01
1
10
100
Drain Current : I
D
[A]
© 201
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ROHM Co., Ltd. All rights reserved.
2018.04 –
Rev.E
8/12
Datasheet
SCT3120AL
Electrical characteristic curves
Fig.15 Typical Capacitance
vs. Drain – Source Voltage
10000
Fig.16 Coss Stored Energy
6
T
a
= 25ºC
5
4
3
2
1
0
1000
C
iss
C
oss
100
C
rss
10
T
a
= 25ºC
f = 1MHz
V
GS
= 0V
1
0
100
200
300
400
0.1
1
10
100
1000
Drain – Source Voltage : V
DS
[V]
Drain – Source Voltage : V
DS
[V]
Fig.17 Switching Characteristics
Fig.18 Dynamic Input Characteristics
10000
1000
100
10
20
T
a
= 25ºC
T
a
= 25ºC
V
DD
= 300V
I
D
= 6.7A
V
DD
= 300V
V
GS
= 18V
R
G
= 0
15
t
f
Pulsed
Pulsed
10
5
t
d(off)
t
r
t
d(on)
1
0
0.1
1
10
100
0
10
20
30
40
Drain Current : I
D
[A]
Total Gate Charge : Q
g
[nC]
© 201
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ROHM Co., Ltd. All rights reserved.
2018.04 –
Rev.E
9/12
Datasheet
SCT3120AL
Electrical characteristic curves
Fig.19 Typical Switching Loss
vs. Drain – Source Voltage
100
Fig.20 Typical Switching Loss
vs. Drain
Current
200
T
a
= 25ºC
V
DD
=300V
V
GS
= 18V/0V
R
G
=0
L=500
H
T
a
= 25ºC
I
D
=6.7A
V
GS
= 18V/0V
R
G
=0
L=500
H
90
80
70
60
50
40
30
20
10
0
150
100
E
on
E
on
50
E
off
E
off
0
0
5
10
15
20
100
200
300
400
500
Drain – Source Voltage : V
DS
[V]
Drain Current : I
D
[A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
200
T
a
= 25ºC
V
DD
=300V
I
D
=6.7A
V
GS
= 18V/0V
150
L=500
H
100
E
on
50
E
off
25
External Gate Resistance : R
G
[
]
0
0
5
10
15
20
30
© 201
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ROHM Co., Ltd. All rights reserved.
2018.04 –
Rev.E
10/12
Datasheet
SCT3120AL
Electrical characteristic curves
Fig.22 Inverse Diode
Forward Current
vs. Source – Drain Voltage
100
Fig.23 Reverse Recovery Time
vs.Inverse Diode
Forward Current
1000
100
10
T
a
= 25ºC
V
GS
= 0V
Pulsed
di / dt = 1100A / us
V
R
= 300V
V
GS
= 0V
10
1
Pulsed
T
a
= 150ºC
T
a
= 75ºC
T
a
= 25ºC
T
a
=
25ºC
0.1
0.01
0
1
2
3
4
5
6
7
8
1
10
100
Source – Drain Voltage : V
SD
[V]
Inverse Diode
Forward Current : I
S
[A]
© 201
6
ROHM Co., Ltd. All rights reserved.
2018.04 –
Rev.E
11/12
Datasheet
SCT3120AL
Measurement circuits
Fig.1-1 Switching
Time Measurement Circuit
Fig.1-2
ꢀ
Switching Waveforms
Fig.2-2 Gate
Charge Waveform
Fig.3-2 Switching
Waveforms
Fig.2-1 Gate
Charge Measurement Circuit
Fig.3-1 Switching
Energy Measurement Circuit
E
on
= I
D
×
V
DS
E
off
= I
D
×
V
DS
V
surge
Same type
device as
D.U.T.
I
rr
V
DS
D.U.T.
I
D
I
D
Fig.4-1 Reverse
Recovery Time Measurement Circuit
Fig.4-2 Reverse
Recovery Waveform
D.U.T.
© 201
6
ROHM Co., Ltd. All rights reserved.
2018.04 –
Rev.E
12/12
Notice
N o t e s
1) The
information contained herein is subject to change without notice.
2) Before
you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although
ROHM is continuously working to improve product reliability and qualit
y
,
s
emicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples
of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The
technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitl
y
,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The
Products specified in this document are not designed to be radiation tolerant.
7) For
use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do
not use our Products in applications requiring extremely high reliabilit
y
,
s
uch as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM
shall have no responsibility for any damages or injury arising
from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM
has used reasonable care to ensure the accuracy of the information contained
in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please
use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibilit
y
,
p
lease contact a
ROHM sales office. ROHM shall have
no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When
providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign
T
r
ade Act.
13) This
document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
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ROHM Co., Ltd. All rights reserved.
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Datasheet
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Part Number
Package
Unit Quantity
SCT3120AL
TO-247N
450
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
30
Tube
inquiry
Yes
