ROHM-Semicon-SH8J65TB1
| Part # | ROHM-Semicon-SH8J65TB1 |
Download  | ROHM-Semicon-SH8J65TB1 |
4V Drive
Pch+Pch MOSFET
SH8J65
Structure
Dimensions
(Unit : mm)
Silicon P-channel MOSFET
SOP8
Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Each lead has same dimensions
Packaging specifications
Inner circuit
(8)
(7)
(6)
(5)
Package
Taping
TB
Type
Code
Basic ordering unit (pieces)
2500
SH8J65
∗
2
∗
2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Absolute maximum ratings
(
T
a
=25
C)
<It is the same ratings for the Tr1 and Tr2.>
∗
1
∗
1
(1)
(2)
(3)
(4)
Parameter
Drain-source voltage
Symbol
Limits
−
30
20
Unit
V
DSS
V
GSS
I
D
V
∗
1 ESD PROTECTION DIODE
∗
2 BODY DIODE
Gate-source voltage
V
Continuous
Pulsed
7.0
A
Drain current
∗
1
I
DP
28
A
Continuous
Pulsed
I
S
−
1.6
−
28
2.0
A
Source current
(Body diode)
∗
1
∗
2
I
SP
A
W / TOTAL
W / ELEMENT
°
C
Total power dissipation
P
D
1.4
Channel temperature
Tch
150
Range of Storage temperature
∗
1 Pw
≤
10
μ
s, Duty cycle
≤
1%
∗
2 Mounted on a ceramic board
Tstg
−
55 to
+
150
°
C
2011.10 – Rev.B
1/5
c
○
2011 ROHM Co., Ltd. All rights reserved.
SH8J65
Data Sheet
Electrical characteristics
(
T
a
=25
C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min.
Typ. Max.
Conditions
μ
A V
GS
=
20V, V
DS
=
0V
I
D
= −
1mA, V
GS
=
0V
μ
A V
DS
= −
30V, V
GS
=
0V
V
DS
= −
10V, I
D
= −
1mA
Unit
Gate-source leakage
I
GSS
−
−
−
−
−
10
−
Drain-source breakdown voltage
V
(BR) DSS
−
30
Zero gate voltage drain current
V
I
DSS
−
−
1
Gate threshold voltage
V
GS (th)
−
1.0
−
2.5
V
−
−
−
21.5 29.0
29.0 39.0
31.0 40.8
m
Ω
I
D
= −
7A, V
GS
= −
10V
m
Ω
I
D
= −
3.5A, V
GS
= −
4.5V
m
Ω
I
D
= −
3.5A, V
GS
= −
4.0V
Static drain-source on-state
resistance
∗
∗
∗
∗
R
DS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Y
fs
C
iss
6.0
−
1200
170
170
12
−
−
−
−
−
−
−
−
−
−
−
S
V
DS
= −
10V, I
D
= −
7A
V
DS
= −
10V
V
GS
=
0V
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
nC
nC
C
oss
C
rss
t
d (on)
f
=
1MHz
∗
∗
∗
∗
∗
∗
∗
V
DD
−
15
V
I
D
= −
3.5A
GS
= −
10V
=
4.3
Ω
=
10
Ω
t
r
40
V
Turn-off delay time
Fall time
t
d (off)
t
f
80
R
L
65
R
G
V
DD
−
15V
Total gate charge
Gate-source charge
Q
g
18
I
D
= −
7A
Q
gs
Q
gd
−
−
3.5
6.5
V
GS
= −
5V
Gate-drain charge
∗
Pulsed
nC R
L
=
2.1
Ω
/ R
G
=
10
Ω
Body diode characteristics
(Source-Drain) (
T
a
=25
C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Symbol Min.
Typ. Max.
Conditions
I
S
= −
7A, V
GS
=
0V
Unit
V
∗
V
SD
−
−
−
1.2
∗
Pulsed
2011.10 – Rev.B
2/5
c
○
2011 ROHM Co., Ltd. All rights reserved.
SH8J65
Data Sheet
Electrical characteristic curves
10
1
20
18
16
14
12
10
8
20
18
16
14
12
10
8
V
DS
= -10V
Pulsed
Ta=25°C
Pulsed
Ta=25°C
Pulsed
V
GS
= -10V
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= – 25°C
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -3.5V
V
GS
= -4.0V
V
GS
= -3.0V
V
GS
= -2.5V
0.1
V
GS
= -3.0V
V
GS
= -2.5V
6
4
2
0
6
4
V
GS
= -2.2V
2
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
1.0
1.5
2.0
2.5
3.0
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical
Transfer Characteristics
Fig.1 Typical Output Characteristics(
Ⅰ
)
Fig.2 Typical Output Characteristics(
Ⅱ
)
100
10
1
100
10
1
100
V
GS
= -4.5V
Pulsed
V
GS
= -10V
Pulsed
Ta=25°C
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
V
GS
= -4.0V
V
GS
= -4.5V
GS
= -10V
V
1
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN-CURRENT : -I
D
[A]
DRAIN-CURRENT : -I
D
[A]
DRAIN-CURRENT : -I
D
[A]
Fig.4 Static
Drain-Source On-State
Fig.5 Static
Drain-Source On-State
Fig.6 Static
Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ
)
Resistance vs. Drain Current(
Ⅰ
)
Resistance vs. Drain Current(
Ⅱ
)
100
10
100
10
1
100
10
1
V
GS
= -4.0V
Pulsed
V
GS
=0V
Pulsed
V
DS
= -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
Ta= -25°C
0.1
0
0.01
0.1
1
10
0.1
1.0
DRAIN-CURRENT : -I
D
[A]
10.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
DRAIN-CURRENT : -I
D
[A]
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
Fig.7 Static
Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ
)
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
2011.10 – Rev.B
3/5
c
○
2011 ROHM Co., Ltd. All rights reserved.
SH8J65
Data Sheet
10
8
100
10000
1000
100
10
Ta=25°C
Pulsed
Ta=25°C
V
DD
= –
1
5V
90
80
70
60
50
40
30
20
10
V
GS
=-
1
0V
t
d
(
o
ff)
R
G
=
1
0
Ω
t
f
I
D
= –
7
.0A
I
D
= –
3
.5A
Pulsed
6
Ta=25°C
DD
= -15V
4
V
I
D
= –
7
.0A
R
G
=10
Ω
Pulsed
2
t
d
(
o
n)
t
r
0
1
0
10
20
30
40
0
5
10
15
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : -V
GS
[V]
DRAIN-CURRENT : -I
D
[A]
TOTAL GATE CHARGE : Qg
[nC]
Fig.12 D
y
nam
i
c Input Characteristics
Fig.10 Static
Drain-Source On-State
Resistance
v
s
. Gate Source Voltage
Fig.11 S
w
i
tching Characteristics
10000
1000
100
1000
O
p
eration in this area is limited by R
D
S
(
ON)
(
V
G
S
=-10V)
100
10
Ciss
P
W
=
1
00us
P
W
=
1
ms
Crss
C
o
ss
1
P
W
= 10ms
Ta=25°C
f=1MHz
0.1
0.01
Ta =
2
5°C
DC
V
GS
=
0
V
Single Pulse
opera
t
i
on
MOUNTED ON SERAMIC BOARD
10
0.1
1
10
100
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : -V
D
S
[V]
DRAIN-SOURCE VOLTAGE : -V
D
S
[V]
Fig.14 Ma
x
i
mum Safe Operating Aera
Fig.13 T
y
p
i
cal Capacitance
v
s
. Drain-Source Voltage
10
1
0.1
0.01
Ta =
2
5°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 89.3 °C/W
<
M
o
unted on a SERA
M
I
C board>
0.001
0.001
0.01
0.1
1
10
100
1000
PULSE WID
T
H : Pw(s)
Fig.15 Normalized Transient Thermal Resistance
v
s
. Pulse Width
2011.10 – Rev.B
4/5
c
○
2011 ROHM Co., Ltd. All rights reserved.
SH8J65
Data Sheet
Measurement circuits
Pulse Width
V
GS
I
D
V
GS
10%
50%
V
DS
50%
90%
R
L
D.U.T.
10%
10%
90%
R
G
V
DD
90%
V
DS
t
d(on)
t
d(off)
t
r
t
f
t
on
t
off
Fig.16 Switching
Time Test Circuit
Fig.17 Switching
Time Waveforms
V
G
V
GS
I
D
V
DS
Q
g
R
L
V
GS
I
G(Const.)
D.U.T.
Q
gs
Q
gd
R
G
V
DD
Charge
Fig.18 Gate
Charge Test Circuit
Fig.19 Gate
Charge Waveform
2011.10 – Rev.B
5/5
c
○
2011 ROHM Co., Ltd. All rights reserved.
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM’s products (hereinafter
“Products”). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-
controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer
Support System
© 2011
ROHM Co., Ltd. All rights reserved.
R1120
A
