ROHM-Semicon-SST4403T116
| Part # | ROHM-Semicon-SST4403T116 |
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SST4403 / MMST4403
Transistors
PNP Medium Power Transistor
(Switching)
SST4403 / MMST4403
z
Features
z
Dimensions
(Unit : mm)
1) BV
CEO
=
−
40V (Min.) ; at I
C
=
−
1mA
2) Complements the SST4401 / MMST4401
SST4403
SOT-23
(1) Emitter
(2) Base
(3) Collector
z
Package, marking, and packaging specifications
ROHM : SST3
Part No.
SST4403 MMST4403
Packaging type
SST3
R2T
SMT3
R2T
MMST4403
Marking
Code
SOT-346
T116
3000
T146
3000
Basic ordering unit (pieces)
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
z
Absolute maximum ratings
(
T
a
=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
−
40
−
40
−
6
Unit
V
V
CBO
V
CEO
V
EBO
V
V
I
C
−
0.6
A
0.2
W
W
Collector power
dissipation
P
C
0.35
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
−
55 to +150
Mounted on a
7
+
5
+
0.6mm CERAMIC SUBSTRATE
∗
z
Electrical characteristics
(
T
a
=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
Min.
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
Unit
V
Conditions
−
−
40
40
−
−
−
I
I
I
C
=
=
−
−
100
µ
A
1mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
V
C
−
5
V
E
=
−
=
100
µ
A
35V
5V
I
CBO
−
−
−
−
0.1
0.1
0.4
µ
A
µ
A
V
V
CB
EB
−
−
Emitter cutoff current
I
EBO
−
−
−
=
I
I
I
I
C
/I
/I
/I
/I
B
=
−
150mA/
500mA/
150mA/
500mA/
−
−
−
−
15mA
50mA
15mA
50mA
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
BE(sat)
−
−
0.75
0.95
C
C
C
B
B
B
=
=
=
−
−
−
−
0.75
−
V
−
1.3
−
30
60
V
V
V
V
V
CE
CE
CE
CE
CE
=
−
1V, I
1V, I
1V, I
1V, I
2V, I
C
C
C
C
C
=
=
=
=
=
−
−
−
−
−
0.1mA
1mA
−
−
300
−
−
8.5
30
15
20
225
30
=
=
=
=
=
=
−
−
−
−
100
100
20
200
−
−
−
−
−
−
10mA
150mA
500mA
DC current transfer ratio
h
FE
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
f
T
MHz
pF
pF
ns
V
V
V
V
V
V
V
CE
−
−
10V, I
10V, f
E
=
20mA, f
=
100MHz
Cob
Cib
td
CB
=
100kHz
−
−
−
−
EB
=
−
0.5V, f
=
100kHz
CC
CC
CC
CC
=
=
=
=
−
−
−
−
30V, V
EB(OFF)
=
=
−
−
2V, I
2V, I
C
=
=
−
−
150mA, I
B1
=
=
−
−
15mA
15mA
Rise time
tr
ns
30V, V
EB(OFF)
C
150mA, I
B1
Storage time
tstg
tf
ns
30V, I
30V, I
C
=
=
−
−
150mA, I
B1
=
−
I
I
B2
=
=
−
−
15mA
15mA
Fall time
−
−
ns
C
150mA, I
B1
=
−
B2
Rev.C
1/3
SST4403 / MMST4403
Transistors
z
Electrical characteristic curves
100
1000
100
10
Ta=25˚C
600
Ta=25˚C
500
V
CE
=10V
1V
400
300
50
200
100
1 =0
µ
A
B
0
0.1
1.0
10
100
1000
0
5
10
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
: V
CE
(V)
Fig.3 DC
current gain vs. collector current ( I )
Fig.1 Grounded
emitter output
characteristics
1000
100
10
1.8
1.6
1.4
V
CE
=
1
0
V
Ta=25˚C
I
C
/ I
B
=10
Ta=125˚C
Ta=25˚C
1.2
1.0
0.8
0.6
0.4
Ta
=
−
55˚C
0.2
0
0.1
1.0
10
100
1000
1.0
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC
current gain vs. collector current ( II )
Fig.2 Base-emitter
saturation
voltage vs. collector current
1000
100
10
Ta=25˚C
=10
T
a
=2
5
˚C
I
C
/
I
B
V
CE
=
1
0
V
0.3
0.2
f=1kHz
0.1
0
1.0
10
100
1000
0.1
1.0
10
COLLECTOR CURRENT : I
100
1000
COLLECTOR CURRENT
: I
(
mA)
C
C
(mA)
Fig.6 Collector-emitter
saturation
voltage vs. collector current
Fig.5 AC
current gain vs. collector current
Rev.C
2/3
SST4403 / MMST4403
Transistors
1000
100
1.8
1.6
1.4
1.2
Ta=25˚C
Ta=25˚C
CE
=10V
Ta=25˚C
CE
=10V
V
V
100MHz
300MHz
200MHz
10
1.0
0.8
0.6
0.4
100
250MHz
1
0.2
0
200MHz
10
0.1
1
10
100
1000
1
10
100
1000
1.0
10
100
1000
COLLECTOR CURRENT
: I
C
(
mA)
COLLECTOR CURRENT
: I
C
(
mA)
COLLECTOR CURRENT
: I
C
(
mA)
Fig.8 Gain
bandwidth product
vs. collector current
Fig.9 Gain
bandwidth product
Fig.7 Grounded
emitter propagation
characteristics
1000
500
100
100
Ta=25˚C
f=1MHz
Ta=25˚C
I
C
/
I
B
=10
Ta=25˚C
CC
=30V
/ I =10
V
I
C
B
Cib
10
V
CC
=30V
C
ob
100
1
0
V
10
5
10
1
0.1
1
10
100
1000
1
10
100
1000
1
10
100
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
(
mA)
C
REVERSE BIAS VOLTAGE
(
V)
Fig.11 Turn-on
time vs.collector
current
Fig.12 Rise
time vs. collector
current
Fig.10 Input
/output capacitance
vs. voltage
1000
1000
Ta=25˚C
Ta=25˚C
V
CC
=30V
V
CC
=30V
I
C
=10I
B1
=10I
B2
I
C
=10I
B1
=10I
B2
100
100
10
10
1
1
10
100
1000
10
100
1000
COLLECTOR CURRENT
: I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
Fig.14 Fall
time vs. collector
current
Fig.13 Storage
time vs. collector
current
Rev.C
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party’s intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer’s right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machiner
y
, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliabilit
y
.
H
owever, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammabilit
y
,
a
nd fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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/
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/
ASIA
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ROHM
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:
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Copyright ©
2007 ROHM CO.,
L
T
D.
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Appendix1-Rev2.0
