ROHM-Semicon-UM5K1NTR
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UM5K1N
Transistors
Small switching (30
V
,
0
.1A)
UM5K1N
!
Features
!
External dimensions
(Units : mm)
1) Two 2SK3018 transistors in a single UMT package.
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
5) Easily designed drive circuits.
1.25
2.1
0.1Min.
!
Applications
Each lead has same dimensions
Interfacing, switching (30V, 100mA)
Abbreviated symbol : K1
ROHM
: UMT5
E I A J
: SC-88A
!
Structure
Silicon N-channel
MOSFET
!
Equivalent circuit
(6)
(4)
(1) Tr1 Gate
(2) Source
(3) Tr2 Gate
(4) Tr2 Drain
(6) Tr1 Drain
A protection diode has been built in between
the gate and the source to protect against
static electricity when the product is in use.
Use the protection circuit when rated
voltagesare exceeded.
∗
Tr1
Tr2
∗
∗
Gate
Gate
Protection
Diode
Protection
Diode
(1)
(2)
(3)
!
Packaging specifications
Package
Taping
TR
Code
Type
Basic ordering unit
(pieces)
3000
UM5K1N
UM5K1N
Transistors
!
Absolute maximum ratings
(
T
a
=25
°
C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Limits
30
Unit
V
V
DSS
GSS
V
±20
V
Continuous
Pulsed
I
D
100
mA
mA
mA
mA
mW
˚C
Drain current
1
∗
I
DP
DR
200
Continuous
Pulsed
I
100
Reverse drain
current
1
∗
I
DRP
200
2
∗
Total power dissipation (Tc=25˚C)
Channel temperature
P
D
150
Tch
150
Storage temperature
Tstg
−
55
∼+
150
˚C
1 Pw
≤
10
µ
s, Duty cycle
≤
50%
∗
2 With each pin mounted on the recommended lands.
∗
!
Electrical characteristics
(
T
a
=25
°
C)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
GS
=±
20V, V
DS
0V
10
µ
A, V
GS
0V
0V
100
µ
A
4V
2.5V
3V
Gate-source leakage
I
GSS
(BR)DSS
DSS
−
30
−
−
−
1
−
µ
A
V
V
=
Drain-source breakdown voltage
V
I
D
=
=
Zero gate voltage drain curren
t
I
−
1.0
1.5
8
µ
A
V
V
DS
=
=
30V, V
GS
3V, I
=
Gate threshold voltage
V
GS(th)
0.8
−
−
V
DS
D
=
R
R
DS(on)
Ω
5
I
I
I
D
D
D
=
=
=
10mA, V
GS
1mA, V
GS
10mA, V
DS
5V
0V
1MHz
10mA, V
DD
5V
5V
500
Ω
=
Static drain-source on-stage
resistance
DS(on)
Ω
−
7
13
−
=
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Y
fs
20
−
−
mS
pF
pF
pF
ns
=
C
iss
13
9
−
V
DS
=
C
oss
rss
d(on)
−
−
−
−
−
−
V
GS
=
C
4
f
I
=
t
t
15
D
=
t
r
−
−
−
35
80
80
−
−
−
ns
ns
ns
V
GS
=
Turn-off delay time
Fall time
d(off)
R
L
=
t
r
R
GS
=
10
Ω
!
Electrical characteristic curves
0.15
200m
100m
2
1.5
1
V
DS
=3V
V
DS
=3V
4V
I
D
=0.1mA
Pulsed
3V
Ta=25
˚
C
Pulsed
Pulsed
50m
3.5V
20m
10m
5m
0.1
2.5V
2m
1m
Ta=125
˚
C
0.05
75
˚
C
25
˚
C
−
25
˚
C
0.5
0
2V
0.5m
0.2m
0.1m
V
2
GS
=1.5V
3
0
0
1
4
5
−
50
−
25
0
25
50
75 100
125 150
0
1
2
3
4
DRAIN-SOURCE VOLTAGE
: V
DS
(
V)
CHANNEL TEMPERATURE
: Tch (
˚
C)
GATE-SOURCE VOLTAGE
: V
GS
(
V)
Fig.1 Typical
output characteristics
Fig.3 Gate
threshold voltage vs.
channel temperature
Fig.2 Typical
transfer characteristics
UM5K1N
Transistors
15
10
5
50
50
Ta=25
˚
C
Pulsed
V
GS
=4V
V
GS
=2.5V
Pulsed
Pulsed
Ta=125
˚
C
75
˚
C
25
˚
C
−
25
˚
C
Ta=125
˚
C
20
10
5
20
10
5
75
˚
C
25
˚
C
−
25
˚
C
2
2
I
D
=0.1A
1
1
I
D
=0.05A
0.5
0.001 0.002
0.5
0.001 0.002
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
5
10
15
20
DRAIN CURRENT
: I
D
(
A)
DRAIN CURRENT
: I
D
(
A)
GATE-SOURCE VOLTAGE
: V
GS
(
V)
Fig.4 Static
drain-source on-state
resistance vs.
drain current ( I )
Fig.5 Static
drain-source on-state
resistance vs.
drain current ( II )
Fig.6 Static
drain-source on-state
resistance vs.
gate-source voltage
9
8
7
0.5
0.2
200m
V
GS
=4V
V
DS
=3V
V
GS
=0V
Pulsed
Pulsed
Pulsed
100m
50m
Ta=
−
25
˚
C
25
˚
C
75
˚
C
125
˚
C
I
D
=100mA
0.1
20m
6
5
4
3
2
1
Ta=125
˚
C
0.05
10m
5m
I
D
=50mA
75
˚
C
25
˚
C
−
25
˚
C
0.02
0.01
2m
1m
0.005
0.5m
0.002
0.001
0.2m
0.1m
0
0.0001 0.0002
0.0005 0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
−
50
−
25
0
25
50
75 100
125 150
0
0.5
1
1.5
DRAIN CURRENT
: I
D
(
A)
CHANNEL TEMPERATURE
: Tch (
˚
C)
SOURCE-DRAIN VOLTAGE
: V
SD
(
V)
Fig.8 Forward
transfer
Fig.7 Static
drain-source on-state
resistance vs.
channel
temperature
Fig.9 Reverse drain current vs.
source-drain voltage
( I )
admittance vs. drain current
50
1000
200m
Ta
=25
˚
C
Ta
=25
˚
C
Ta=25
˚
C
Pulsed
t
f
f=1MH
Z
V
V
DD
=5V
GS
=5V
100m
50m
500
V
GS
=0V
t
d (off)
20
10
5
R
G
=10
Ω
200
100
Pulsed
C
iss
20m
10m
5m
V
GS
=4V
0V
50
t
r
C
oss
2m
1m
20
10
5
t
d (on)
C
rss
2
0.5m
1
0.2m
0.1m
0.5
0.1 0.2
2
0.1 0.2
0.5
1
2
5
10 20 50
100
0.5
1
2
5
10
20
50
0
0.5
1
1.5
DRAIN CURRENT
: I
D
(
mA)
DRAIN-SOURCE VOLTAGE
: V
DS
(
V)
SOURCE-DRAIN VOLTAGE
: V
SD
(V)
Fig.12 Switching
characteristics
(See Figures 13 and 14 for
the measurment circuit and
resultant waveforms)
Fig.11 Typical
capacitance vs.
drain-source voltage
Fig.10 Reverse
drain current vs.
source-drain voltage
( II )
UM5K1N
Transistors
!
Switching characteristics measurement circuit
Pulse width
90%
50%
10%
50%
V
GS
V
V
GS
DS
I
D
V
DS
R
L
D.U.T.
10%
R
G
10%
90%
V
DD
90%
t
d (on)
t
on
t
r
t
f
t
off
t
d (off)
Fig.13 Switching time measurement circuit
Fig.14 Switching time waveforms
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party’s intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer’s right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export
T
r
ade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to “objective” criteria or an “informed” (by MITI clause)
on the basis of “catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
