ROHM-Semicon-UMH11NTN

Part #ROHM-Semicon-UMH11NTN
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ROHM-Semicon-UMH11NTN
EMH11 / UMH11N / IMH11A  
Datasheet  
General purpose (dual digital transistors)  
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Outline  
Parameter  
DTr1 and DTr2  
50V  
SO
T
-56
SO
T
-36
V
CC  
I
100mA  
10kΩ  
C(MAX.)  
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R
1
EMH11  
(EMT6)  
UMH11N  
(UMT6)  
R
2
10kΩ  
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SO
T
-45
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Features  
1)Two DTC114E chips in a EMT or UMT or  
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SMT package.  
2)Mounting possible with EMT3 or UMT3 or  
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SMT3 automatic mounting machines.  
3)Transistor elements are independent,  
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eliminating interference.  
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IMH11A  
(SMT6)  
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Inner circuit  
4)Mounting cost and area can be cut in half.  
EMH11 / UMH11N  
IMH11A  
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Application  
INVERTER, INTERFACE, DRIVER  
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Packaging specifications  
Basic  
ordering  
Package  
Taping Reel
 
size Tape
 
width  
Part No.  
Package  
Marking  
size  
1616  
2021  
2928  
code  
T2R  
TN  
(mm)  
180  
180  
180  
(mm)  
unit.(pcs)  
SOT-563  
(EMT6)  
EMH11  
UMH11N  
IMH11A  
8
8
8
8000  
H11  
H11  
H11  
SOT-363  
(UMT6)  
3000  
3000  
SOT-457  
(SMT6)  
T110  
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© 2015 ROH
M
C
o., Ltd. All rights reserved.  
1/7  
20151001 – Rev.002  

EMH11 / UMH11N / IMH11A  
Datasheet  
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Absolute maximum ratings
(T

a

= 25°C)  
<For DTr1 and DTr2 in common>  
Parameter  
Symbol  
V

CC  

V

IN  

Values  
50  
Unit  
V
Supply voltage  
Input voltage  
Output current  
Collector current  
EMH11  
-10 to 40  
50  
V
I

O  

mA  
mA  
*1  
I

C(
M
AX)  

100  
*2*3  
P

D  

150  
*2*3  
P

D  

Power dissipation  
mW  
UMH11N  
IMH11A  
150  
*2*4  
P

D  

300  
T

j  

Junction temperature  
150  
℃
℃
T

stg  

Range of storage temperature  
-55 to +150  
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Electrical characteristics
(T

a

= 25°C)  
<For DTr1 and DTr2 in common>  
Values  
Parameter  
Symbol  
Conditions  
= 5
V
, I
 
=
1
00μA  
Unit  
V
Min.  
–
Typ.  
Max.  
0.5  
–
V

I(off)  

V

I(on)  

V

O
(on)  

I

I  

V
–
–
CC  
O
Input voltage  
V =
 
0.3
V
, I
 
=
1
0mA  
3.0  
–
O
O
I =
 
10mA, I
 
= 0.5mA  
Output voltage  
Input current  
100  
–
300  
880  
500  
–
mV  
μA  
nA  
–
O
I
V =
 
5V  
–
I
I

O
(off)  

G

I  

V
CC  
= 50
V
, V
 
=
0
V  
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
–
–
V =
 
5
V
, I
 
=
5
mA  
30  
7
–
O
O
R

1  

–
–
10  
1.0  
13  
kΩ  
–
R

2

/R

1  

0.8  
1.2  
V
= 10
V
, I
 
= -5mA,  
E
CE  
f

T  

Transition frequency  
–
250  
–
MHz  
f = 100MHz  
*1 Characteristics of built-in transistor  
*2 Each terminal mounted on a reference land.  
*3 120mW per element must not be exceeded.  
*4 200mW per element must not be exceeded.  
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© 2015 ROH
M
C
o., Ltd. All rights reserved.  
2/7  
20151001 – Rev.002  

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EMH11 / UMH11N / IMH11A  
Datasheet  
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Electrical characteristic curves
(T =
 
25°C)  
a
<For DTr1 and DTr2 in common>  
Fig.1 Input Voltage vs. Output Current  
Fig.2 Output Current vs. Input Voltage  
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(ON Characteristics)  
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(OFF Characteristics)  
Fig.3 Output Current vs. Output Voltage  
Fig.4 DC Current Gain vs. Output Current  
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© 2015 ROH
M
C
o., Ltd. All rights reserved.  
3/7  
20151001 – Rev.002  

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EMH11 / UMH11N / IMH11A  
Datasheet  
l
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Electrical characteristic curves
(T =
 
25°C)  
a
<For DTr1 and DTr2 in common>  
Fig.5 Output Voltage vs. Output Current  
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© 2015 ROH
M
C
o., Ltd. All rights reserved.  
4/7  
20151001 – Rev.002  

EMH11 / UMH11N / IMH11A  
ꢀ ꢀ ꢀ  
Datasheet  
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Dimensions  
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© 2015 ROH
M
C
o., Ltd. All rights reserved.  
5/7  
20151001 – Rev.002  

EMH11 / UMH11N / IMH11A  
ꢀ ꢀ ꢀ  
Datasheet  
l
l
Dimensions  
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© 2015 ROH
M
C
o., Ltd. All rights reserved.  
6/7  
20151001 – Rev.002  

EMH11 / UMH11N / IMH11A  
ꢀ ꢀ ꢀ  
Datasheet  
l
l
Dimensions  
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© 2015 ROH
M
C
o., Ltd. All rights reserved.  
7/7  
20151001 – Rev.002