ROHM-Semicon-US6K4TR
| Part # | ROHM-Semicon-US6K4TR |
Download  | ROHM-Semicon-US6K4TR |
US6K4
Transistors
1.8V Drive
Nch+Nch MOSFET
US6K4
z
Structure
z
Dimensions
(Unit : mm)
Silicon N-channel MOSFET
TUMT6
z
Features
1) Two Nch MOSFE
T
s
a
re put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) 1.8V drive.
Abbreviated symbol : K04
z
Applications
Switching
z
Packaging specifications
z
Inner circuit
(6)
(5)
(4)
Package
Taping
TR
Type
Code
Basic ordering unit (pieces)
3000
∗
1
US6K4
∗
2
∗
2
∗
1
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
(1)
(2)
(3)
∗
1 ESD PROTECTION DIODE
∗
2 BODY DIODE
z
Absolute maximum ratings
(
T
a
=25
°
C)
<It is the same ratings for the Tr1 and Tr2>
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V
DSS
V
GSS
I
D
Limits
Unit
20
10
V
V
Continuous
1.5
A
Drain current
Pulsed
∗
1
I
DP
I
S
3.0
A
Source current
(Body diode)
Continuous
0.6
A
∗
1
∗
2
Pulsed
I
SP
2.4
A
W / TOTAL
W / ELEMENT
°
C
1.0
Total power dissipation
P
D
0.7
Channel temperature
Tch
150
Range of storage temperature
∗
1 Pw
≤
10
µ
s, Duty cycle
≤
1%
∗
2 Mounted on a ceramic board
Tstg
−
55 to
+
150
°
C
z
Thermal resistance
Parameter
Symbol
Limits
125
Unit
°
C/W / TOTAL
°
C/W / ELEMENT
∗
Channel to ambient
Rth(ch-a)
179
∗
Mounted on a ceramic board
Rev.A
1/3
US6K4
Transistors
z
Electrical characteristics
(
T
a
=25
°
C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Symbol Min.
Typ. Max.
Conditions
µ
A V
GS
= 10V,
V
DS
=0V
I
D
= 1mA, V
GS
=0V
µ
A V
DS
= 20V, V
GS
=0V
V
DS
= 10V, I
D
= 1mA
Unit
Gate-source leakage
I
GSS
−
−
−
10
−
Drain-source breakdown voltage
V
(BR) DSS
20
V
Zero gate voltage drain current
Gate threshold voltage
I
DSS
−
0.3
−
−
−
−
−
1
V
GS (th)
1.0
180
240
310
−
−
−
−
−
−
−
−
2.5
V
130
170
220
−
110
18
15
5
m
Ω
I
D
= 1.5A, V
GS
= 4.5V
m
Ω
I
D
= 1.5A, V
GS
= 2.5V
m
Ω
I
D
= 0.8A, V
GS
= 1.8V
Static drain-source on-state
resistance
∗
R
DS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Y
fs
C
iss
1.6
S
V
DS
= 10V, I
D
= 1.5A
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
V
DS
= 10V
C
oss
C
rss
t
d (on)
V
GS
=0V
f=1MHz
∗
∗
∗
I
D
= 1.0A
V
DD
10
V
t
r
5
V
GS
= 4.5V
Turn-off delay time
Fall time
t
d (off)
20
3
R
R
L
= 10
Ω
∗
∗
t
f
GS
=10
Ω
Total gate charge
Gate-source
charge
Q
g
1.8
0.3
0.3
nC V
DD
10V
∗
∗
V
GS
= 4.5V
Q
gs
Q
gd
−
−
−
−
nC
nC
I
D
= 1.5A
Gate-drain
charge
∗
Pulsed
z
Body diode characteristics
(Source-drain) (
T
a
=25
°
C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Forward voltage
Symbol Min.
Typ. Max.
1.2
Conditions
I
S
= 0.6A, V
GS
=0V
Unit
V
V
SD
−
−
Rev.A
2/3
US6K4
Transistors
z
Electrical characteristics curves
1000
1000
5
4
Ta=25
°
C
Ta=25
°
C
DD
=10V
=1.5A
=10
Ω
Ta=25
°
C
V
V
DD
=10V
GS
=4.5V
V
f=1MHz
I
D
V
GS
=0V
R
G
=10
Ω
R
G
Pulsed
Pulsed
100
10
1
tf
3
2
Ciss
100
td(off)
td(on)
tr
1
0
Coss
Crss
10
0.01
0.0 0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1
10
100
0.01
0.1
1
10
TOTAL GATE CHARGE : Qg (nC)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
Fig.3 Dynamic
Input Characteristics
Fig.1 Typical
Capacitance
Fig.2 Switching
Characteristics
vs. Drain-Source Voltage
10
10
1
500
V
DS
=10V
V
GS
=0V
Ta=25
°
C
Pulsed
Pulsed
Pulsed
450
400
350
300
250
1
0.1
Ta=125
°
C
75
°
C
Ta=125
°
C
75
°
C
25
°
C
−
25
°
C
25
°
C
−
25
°
C
I
D
=1.5A
200
150
0.01
I
D
=0.8A
0.1
0.001
100
50
0.01
0.0
0
0
0.0001
0.0
0.5
1.0
1.5
2.0
1
2
3
4
5
6
7
8
9
10
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V
GS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.4 Typical
Transfer Characteristics
Fig.5 Static
Drain-Source
Fig.6 Source
Current vs.
Source-Drain Voltage
On-State Resistance vs.
Gate-source Voltage
1000
1000
1000
V
GS
=1.8V
V
GS
=2.5V
V
GS
=4.5V
Ta=125
°
C
Ta=125
°
C
75
°
C
Pulsed
Pulsed
Pulsed
Ta=125
°
C
75
°
C
75
°
C
25
°
C
25
°
C
25
°
C
−
25
°
C
−
25
°
C
−
25
°
C
100
100
100
10
10
0.01
10
0.01
0.01
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.7 Static
Drain-Source
On-State Resistance
vs. Drain Current (
Ι
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙ
)
Fig.9 Static
Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙΙ
)
z
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party’s intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer’s right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machiner
y
, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliabilit
y
.
H
owever, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammabilit
y
,
a
nd fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
THE AMERICAS
/
EUPOPE
/
ASIA
/
JAPAN
ROHM
Customer Support System
Contact us
:
webmaster@ rohm.co.jp
TEL : +81-75-311-2121
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Copyright ©
2007 ROHM CO.,
L
T
D.
21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
Appendix1-Rev2.0
Datasheet
Buy
Part Number
Package
Unit Quantity
US6K4
TUMT6
3000
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
3000
Taping
inquiry
Yes
