ROHM-Semicon-VT6X2T2R

VT6X2 / EMX52  

Power management (dual transistors)  

Datasheet  

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Outline  

Parameter  

Tr1 and Tr2  

50V  

VMT6  

EMT6  

V

CEO  

I

100mA  

ꢀ

C

ꢀ

ꢀ

ꢀ

VT6X2  

EMX52  

(SC-107C)  

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Features  

1) General Purpose.  

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Inner circuit  

2) Two 2SCR523 chips in one package.  

3) Transister elements are independent, eliminating  

interface.  

4) Mounting cost and area can be cut in half.  

5) Lead Free/RoHS Compliant.  

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Application  

Switching, LED driver  

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Packaging specifications  

Basic  

Package  

size  

Taping  

code  

Reel size

 

Tape width  

Part No.  

Package  

ordering  

Marking  

(mm)  

(mm)  

unit.(pcs)  

VT6X2  

EMX52  

VMT6  

EMT6  

ꢀ

1212  

1616  

ꢀ

T2R  

T2R  

ꢀ

180  

180  

ꢀ

8

8

8000  

8000  

ꢀ

X2  

X52  

ꢀ

ꢀ

ꢀ

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© 2013 ROH

M

C

o., Ltd. All rights reserved.  

1/7  

20130905 – Rev.002  

VT6X2 / EMX52  

Datasheet  

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Absolute maximum ratings

(T

a

= 25°C)  

<For Tr1 and Tr2 in common>  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Values  

50  

Unit  

V

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

50  

V

5

V

100  

mA  

mA  

Collector current  

*1  

I

CP  

200  

Power dissipation  

VT6X2  

EMX52  

150  

*2 *3  

P

D  

mW  

150  

T

j  

Junction temperature  

150  

℃

℃

T

stg  

Range of storage temperature  

-55 to +150  

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Electrical characteristics

(T

a

= 25°C)  

<For Tr1 and Tr2 in common>  

Values  

Typ.  

Parameter  

Symbol  

Conditions  

Unit  

Min.  

50  

Max.  

–

Collector-base breakdown  

voltage  

BV

CBO  

BV

CEO  

I =

 

50μA  

–

–

V

V

C

Collector-emitter breakdown  

voltage  

I =

 

1mA  

50  

–

C

BV

EBO  

I

CBO  

I =

 

50μA  

Emitter-base breakdown voltage  

Collector cut-off current  

5

–

–

V

μA  

μA  

V

E

V

CB  

V

EB  

= 50V  

= 5V  

–

–

0.1  

0.1  

0.30  

560  

I

EBO  

Emitter cut-off current  

–

–

–

0.10  

–

Collector-emitter saturation voltage  

V

CE(sat)  

h

FE  

I =

 

50mA, I

 

= 5mA  

C

B

V

= 6

V

, I

 

=

1

mA  

DC current gain  

120  

–

CE  

CE  

C

V

= 10

V

, I

 

= -10mA,  

E

f

T  

Transition frequency  

–

–

350  

1.6  

–

–

MHz  

pF  

f = 100MHz  

V

CB  

= 10

V

, I

 

=

0

A,  

E

C

ob  

Output capacitance  

f = 1MHz  

*1 Pw=1ms Single Pulse  

*2 Each terminal mounted on a reference footprint  

*3 120mW per element must not be exceeded.  

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© 2013 ROH

M

C

o., Ltd. All rights reserved.  

2/7  

20130905 – Rev.002  

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VT6X2 / EMX52  

Datasheet  

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Electrical characteristic curves(Ta=25

℃

)  

<For Tr1 and Tr2 in common>  

Fig.1 Grounded Emitter Propagation  

Characteristics  

Fig.2 Typical Output Characteristics  

Fig.3 DC Current Gain vs. Collector  

Current(I)  

Fig.4 DC Current Gain vs. Collector  

Current(II)  

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© 2013 ROH

M

C

o., Ltd. All rights reserved.  

3/7  

20130905 – Rev.002  

ꢀ ꢀ ꢀ  

VT6X2 / EMX52  

Datasheet  

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Electrical characteristic curves

(T =25°C)  

a

<For Tr1 and Tr2 in common>  

Fig.5 Collector-Emitter Saturation Voltage  

vs. Collector Current(I)  

Fig.6 Collector-Emitter Saturation Voltage  

vs. Collector Current(II)  

Fig.7 Base-Emitter Saturation Voltage vs.  

Collector Current  

Fig.8 Gain Bandwidth Product vs. Emitter  

Current  

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© 2013 ROH

M

C

o., Ltd. All rights reserved.  

4/7  

20130905 – Rev.002  

ꢀ ꢀ ꢀ  

VT6X2 / EMX52  

Datasheet  

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Electrical characteristic curves

(T =25°C)  

a

<For Tr1 and Tr2 in common>  

Fig.9 Emitter input capacitance vs. Emitter-  

Base Voltage Collector output capacitance  

vs.  

Fig.10 Safe Operating Area  

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© 2013 ROH

M

C

o., Ltd. All rights reserved.  

5/7  

20130905 – Rev.002  

VT6X2 / EMX52  

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Datasheet  

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Dimensions  

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© 2013 ROH

M

C

o., Ltd. All rights reserved.  

6/7  

20130905 – Rev.002  

VT6X2 / EMX52  

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Datasheet  

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Dimensions  

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© 2013 ROH

M

C

o., Ltd. All rights reserved.  

7/7  

20130905 – Rev.002