Samwin-SW4N65
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SW4N65D
N-channel Enhanced
mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/
TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET
Features
TO-220F
TO-251M TO-251U
TO-251N TO-251S
BV
DSS
: 650V
I
D
: 4A
High ruggedness
Low R
DS(ON)
(Typ 2
Ω
)@V
GS
=10V
Low Gate Charge (Typ 18nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Charger,TV-POWER
1
1
1
1
1
1
2
3
2
2
2
R
DS(ON)
: 2
Ω
2
3
3
3
3
SOT-82
TO-263
TO-252
TO-220
TO-251MQ
2
1
1
1
1
1
2
3
2
3
2
3
2
3
2
3
3
General Description
1. Gate
2. Drain
3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
2
3
4
5
6
7
8
Sales Type
SW F 4N65D
SW N 4N65D
SW SI 4N65D
SW MI 4N65D
SW UI 4N65D
SW D 4N65D
SW S 4N65D
SW B 4N65D
SW P 4N65D
SW MQI 4N65D
Marking
Package
TO-220F
TO-251N
TO-251S
TO-251M
TO-251U
TO-252
SOT-82
TO-263
TO-220
TO-251MQ
Packaging
SW4N65D
SW4N65D
SW4N65D
SW4N65D
SW4N65D
SW4N65D
SW4N65D
SW4N65D
SW4N65D
SW4N65D
TUBE
TUBE
TUBE
TUBE
TUBE
REEL
TUBE
TUBE
TUBE
TUBE
9
10
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO251N/S/M/U&TO252&
TO220F
SOT82 TO263 TO220
TO-251MQ
V
DSS
I
D
Drain to source voltage
Continuous drain current (@T
C
=25
o
C)
Continuous drain current (@T
C
=100
o
C)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy (note2)
Repetitive avalanche energy
Peak diode recovery dv/dt
650
4*
2.5*
16
±
30
246
15
V
A
A
A
V
mJ
mJ
V/ns
I
DM
V
GS
E
AS
E
AR
dv/dt
(note 1)
(note 1)
(note 3)
5
Total power dissipation (@T
C
=25
o
C)
Derating factor above 25
o
C
23
101
145
156
167
W
W/
o
C
P
D
T
STG
, T
J
T
L
0.19
0.81
1.16
1.25
1.33
Operating junction temperature & storage
temperature
-55 ~ + 150
300
o
C
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
TO251N/S/M/U&TO252&
TO-251MQ
Unit
TO220F
SOT82 TO263
TO220
R
thjc
R
thja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
5.36
49
1.24
66
0.86
81
0.80
0.75
61
o
C/W
o
C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2018. Rev. 11
1/8
SW4N65D
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
650
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
0.48
V/
o
C
/ ΔT
J
coefficient
V
DS
=650V, V
GS
=0V
V
DS
=520V, T
C
=125
o
C
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
1
uA
uA
nA
nA
I
DSS
Drain to source leakage current
50
100
-100
Gate to source leakage current, forward
Gate to source leakage current, reverse
I
GSS
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=2A
V
DS
=30V, I
D
=2A
2.5
4.5
2.6
V
Ω
S
Drain to source on state resistance
Forward transconductance
2
3.8
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
758
69
8
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=25V, f=1MHz
pF
ns
15
26
43
26
18
4
V
DS
=325V, V
GS
=10V, I
D
=4A,
R
G
=25Ω
t
d(off)
t
f
Turn off delay time
Fall time
(note 4,5)
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
V
DS
=520V, V
GS
=10V, I
D
=4A
(note 4,5)
Q
gs
Q
gd
R
g
nC
8
V
DS
=0V, Scan F mode
3.2
Ω
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
I
S
I
SM
V
SD
t
rr
4
A
A
Integral reverse p-n Junction
diode in the MOSFET
16
1.4
Diode forward voltage drop.
Reverse recovery time
I
S
=4A, V
GS
=0V
V
398
2.1
ns
uC
I
S
=4A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Reverse recovery charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 30.8mH, I
AS
= 4A, V
DD
= 50V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤ 4A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2018. Rev. 11
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SW4N65D
Fig. 1. On-state characteristics
Fig. 2. Transfer Characteristics
Fig. 4. On-state current vs. diode
forward voltage
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 6. On-resistance variation
vs. junction temperature
Fig 5. Breakdown voltage variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2018. Rev. 11
3/8
SW4N65D
Fig. 7. Gate charge characteristics
Fig. 8. Capacitance Characteristics
Fig. 10. Maximum safe operating area
（
TO-251N
&TO-251S&TO-251M&TO-251U&TO-252&TO-251MQ
）
Fig. 9. Maximum safe operating area
（
TO-220F
）
Fig. 12. Maximum safe operating area
（
TO-263
）
Fig. 11. Maximum safe operating area
（
SOT-82
）
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2018. Rev. 11
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SW4N65D
Fig. 13. Maximum safe operating area
（
TO-220
）
Fig. 14. Transient thermal response curve
（
TO-220F
）
Fig. 15. Transient thermal response curve
（
TO-251N&TO-251S&TO-251M&
TO-251U&TO-252&TO-251MQ
）
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2018. Rev. 11
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SW4N65D
Fig. 16. Transient thermal response curve
（
SOT-82
）
Fig. 17. Transient thermal response curve
（
TO-263
）
Fig. 18. Transient thermal response curve
（
TO-220
）
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2018. Rev. 11
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SW4N65D
Fig. 19. Gate charge test circuit & waveform
Fig. 20. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Fig. 21. Unclamped Inductive switching test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2018. Rev. 11
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SW4N65D
Fig. 22. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
I
S
(DUT)
V
DS
L
di/dt
I
S
I
RM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTE
R.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2018. Rev. 11
8/8
