Samwin-SWB030R04VT
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SW030R04VT
N-channel Enhanced mode TO-220/TO-263 MOSFET
Features
TO-220
BV
DSS
: 40V
I
D
: 130A
TO-263
⚫
High ruggedness
⚫
Low R
DS(ON)
(Typ 3.7m
Ω
)@V
GS
=4.5V
(Typ 2.8m
Ω
)@V
GS
=10V
⚫
Low Gate Charge (Typ 120nC)
⚫
Improved dv/dt Capability
⚫
100% Avalanche Tested
R
DS(ON)
: 3.7m
Ω
@V
GS
=4.5V
2.8m
Ω
@V
GS
=10V
1
1
2
2
2
3
3
⚫
Application:Power Supply,LED Boost
1. Gate
2. Drain
3. Source
1
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
3
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
Sales Type
Marking
Package
TO-220
TO-263
Packaging
TUBE
SW P 030R04VT
SW B 030R04VT
SW030R04VT
SW030R04VT
2
TUBE
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
TO-263
V
DSS
I
D
Drain to source voltage
40
130*
86*
520
±
20
828
49
V
A
Continuous drain current (@T
C
=25
o
C)
Continuous drain current (@T
C
=100
o
C)
Drain current pulsed
A
I
DM
V
GS
E
AS
(note 1)
A
Gate to source voltage
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
E
AR
dv/dt
5
Total power dissipation (@T
C
=25
o
C)
Derating factor above 25
o
C
134
121
P
D
T
STG
, T
J
T
L
1.07
0.97
W/
o
C
o
C
Operating junction temperature & storage temperature
-55 ~ + 150
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-220
TO-263
R
thjc
R
thja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
0.93
52
1.03
o
C/W
o
C/W
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
1/6
SW030R04VT
Electrical characteristic
( T
J
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
40
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
0.02
V/
o
C
/ ΔT
J
coefficient
V
DS
=40V, V
GS
=0V
V
DS
=32V, T
J
=125
o
C
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
1
uA
uA
nA
nA
I
DSS
Drain to source leakage current
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
100
-100
I
GSS
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
1
3
V
V
GS
=4.5V, I
D
=65A,T
J
=25
o
C
V
GS
=10V, I
D
=65A,T
J
=25
o
C
V
GS
=10V, I
D
=130A,T
J
=25
o
C
V
GS
=4.5V, I
D
=65A,T
J
=125
o
C
V
GS
=10V, I
D
=65A,T
J
=125
o
C
V
DS
=10V, I
D
=30A
3.7
2.8
2.9
6.1
4.6
140
4.6
3.5
3.6
m
Ω
m
Ω
m
Ω
m
Ω
m
Ω
S
Drain to source on state resistance
Forward transconductance
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
5850
773
687
19
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=20V, f=1MHz
pF
ns
V
DS
=20V, I
D
=30A, R
G
=4.7Ω,
V
GS
=10V
54
t
d(off)
t
f
Turn off delay time
Fall time
98
(note 4,5)
35
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
120
17
V
DS
=32V, V
GS
=10V, I
D
=30A
(note 4,5)
Q
gs
Q
gd
R
g
nC
35
V
DS
=0V, Scan F mode
1.3
Ω
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
I
S
I
SM
V
SD
t
rr
130
520
1.4
A
A
Integral reverse p-n Junction
diode in the MOSFET
Diode forward voltage drop.
Reverse recovery time
I
S
=30A, V
GS
=0V
V
29
19
ns
nC
I
S
=30A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Reverse recovery charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =1.84mH, I
AS
=30A, V
DD
=30V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤ 30A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
2/6
SW030R04VT
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On-state current vs. diode
forward voltage
Fig. 6. On-resistance variation
vs. junction temperature
Fig 5. Breakdown voltage variation
vs. junction temperature
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
3/6
SW030R04VT
Fig. 7. Gate charge characteristics
Fig. 8. Capacitance Characteristics
Fig. 10. Maximum safe operating area(TO-263)
Fig. 9. Maximum safe operating area(TO-220)
Fig. 11. Transient thermal response curve(TO-220)
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
4/6
SW030R04VT
Fig. 12. Transient thermal response curve(TO-263)
Fig. 13. Gate charge test circuit & waveform
Fig. 14. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
5/6
SW030R04VT
Fig. 15. Unclamped Inductive switching test circuit & waveform
Fig. 16. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
V
DS
L
di/dt
I
S
I
S
(DUT)
I
RM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
6/6
