Samwin-SWD076R68E7T
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SW076R68E7T
N-channel Enhanced mode TO-252 MOSFET
Features
TO-252
BV
DSS
: 68V
⚫
High ruggedness
I
D
: 85A
⚫
Low R
DS(ON)
(Typ 8m
Ω
)@V
GS
=10V
⚫
Low Gate Charge (Typ 80nC)
⚫
Improved dv/dt Capability
R
DS(ON)
: 8mΩ
2
3
⚫
100% Avalanche Tested
⚫
Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
1
2
3
1
1. Gate
2.Drain 3.Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics,
including fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics.
Order Codes
Item
1
Sales Type
Marking
Package
TO-252
Packaging
REEL
SW D 076R68E7T
SW076R68E7T
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DSS
Drain to source voltage
Continuous drain current (@T
C
=25
o
C)
68
85*
V
A
I
D
Continuous drain current (@T
C
=100
o
C)
Drain current pulsed
60*
A
I
DM
V
GS
E
AS
(note 1)
340
A
Gate to source voltage
±
20
182
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
E
AR
dv/dt
18
5
Total power dissipation (@T
C
=25
o
C)
Derating factor above 25
o
C
125
P
D
1.0
W/
o
C
o
C
T
STG
, T
J
Operating junction temperature & storage temperature
-55 ~ + 150
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
Parameter
Value
1.0
Unit
Thermal resistance, Junction to case
o
C/W
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 0.6
1/6
SW076R68E7T
Electrical characteristic
( T
J
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
68
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
V
DS
=68V, V
GS
=0V
0.04
V/
o
C
/ ΔT
J
coefficient
1
uA
uA
nA
nA
I
DSS
Drain to source leakage current
V
DS
=54V, T
J
=125
o
C
V
GS
=20V, V
DS
=0V
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
100
-100
I
GSS
V
GS
=-20V, V
DS
=0V
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
2
4
V
V
GS
=10V, I
D
=40A,T
J
=25
o
C
V
GS
=10V, I
D
=40A,T
J
=125
o
C
V
DS
=5V, I
D
=40A
8.0
13
48
9.1
mΩ
mΩ
S
Drain to source on state resistance
Forward transconductance
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
3704
231
219
22
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=34V, f=1MHz
pF
ns
V
DS
=34V, I
D
=30A, R
G
=4.7Ω,
V
GS
=10V
61
t
d(off)
t
f
Turn off delay time
Fall time
67
(note 4,5)
28
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
80
V
DS
=54V, V
GS
=10V, I
D
=30A ,
I
G
=3mA
Q
gs
Q
gd
R
g
20
nC
(note 4,5)
31
V
DS
=0V, Scan F mode
3.5
Ω
Source to drain diode ratings characteristics
Symbol
I
S
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
85
340
1.4
A
A
Integral reverse p-n Junction
diode in the MOSFET
I
SM
V
SD
t
rr
Diode forward voltage drop.
Reverse recovery time
I
S
=45A, V
GS
=0V
V
35
44
ns
nC
I
S
=30A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Reverse recovery charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =0.5mH, I
AS
=27A, V
DD
=50V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤30A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 0.6
2/6
SW076R68E7T
Fig. 2. Transfer Characteristics
Fig. 1. On-state characteristics
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On-state current vs. diode
forward voltage
Fig. 6. On-resistance variation
vs. junction temperature
Fig 5. Breakdown voltage variation
vs. junction temperature
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 0.6
3/6
SW076R68E7T
Fig. 8. Capacitance Characteristics
Fig. 7. Gate charge characteristics
Fig. 9. Maximum safe operating area
Fig. 10. Maximum drain current
vs. case temperature
Fig. 11. Transient thermal response curve
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 0.6
4/6
SW076R68E7T
Fig. 12. Gate charge test circuit & waveform
Fig. 13. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 0.6
5/6
SW076R68E7T
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
V
DS
L
di/dt
I
S
I
S
(DUT)
I
RRM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 0.6
6/6
