Samwin-SWD630D
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SW630D
N-channel Enhanced mode TO-220/TO-252 MOSFET
Features
TO-220
TO-252
BV
DSS
: 200V
I
D
: 9A
⚫
High ruggedness
⚫
Low R
DS(ON)
(Typ 0.27
Ω
)@V
GS
=10V
⚫
Low Gate Charge (Typ 20nC)
⚫
Improved dv/dt Capability
⚫
100% Avalanche Tested
⚫
Application:Synchronous Rectification,
DC-DC
R
DS(ON)
: 0.27Ω
2
1
1
2
2
3
3
1
1. Gate
2. Drain
3. Source
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
Sales Type
SW P 630D
SW D 630D
Marking
SW630D
SW630D
Package
Packaging
TUBE
TO-220
TO-252
2
REEL
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
TO-252
V
DSS
Drain to source voltage
200
9*
V
A
Continuous drain current (@T
C
=25
o
C)
Continuous drain current (@T
C
=100
o
C)
Drain current pulsed
I
D
5.7*
36
A
I
DM
V
GS
E
AS
(note 1)
A
Gate to source voltage
±
20
156
16
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
E
AR
dv/dt
5
Total power dissipation (@T
C
=25
o
C)
Derating factor above 25
o
C
138.9
1.1
96.2
0.8
P
D
W/
o
C
o
C
T
STG
, T
J
T
L
Operating junction temperature & storage temperature
-55 ~ + 150
300
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-220
TO-252
1.3
R
thjc
R
thja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
0.9
54
o
C/W
o
C/W
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 4.0
1/6
SW630D
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off ch188aracteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
200
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
0.23
V/
o
C
/ ΔT
J
coefficient
V
DS
=200V, V
GS
=0V
V
DS
=160V, T
C
=125
o
C
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
1
uA
uA
nA
nA
I
DSS
Drain to source leakage current
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
100
-100
I
GSS
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=4.5A
V
DS
=20V, I
D
=4.5A
2
4
V
Ω
S
Drain to source on state resistance
Forward transconductance
0.27
6.2
0.4
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
720
117
30
7
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=25V, f=1MHz
pF
ns
V
DS
=100V, I
D
=9A, R
G
=25Ω,
V
GS
=10V
33
41
29
20
4
t
d(off)
t
f
Turn off delay time
Fall time
(note 4,5)
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
V
DS
=160V, V
GS
=10V, I
D
=9A
Ig=13mA
Q
gs
Q
gd
R
g
nC
(note 4,5)
8
V
DS
=0V, Scan F mode
1.9
Ω
Source to drain diode ratings characteristics
Symbol
I
S
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
9
A
A
Integral reverse p-n Junction
diode in the MOSFET
I
SM
36
1.4
V
SD
t
rr
Diode forward voltage drop.
Reverse recovery time
I
S
=9A, V
GS
=0V
V
128
556
ns
nC
I
S
=9A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Reverse recovery charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =3.85mH, I
AS
=9A, V
DD
=50V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤ 9A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 4.0
2/6
SW630D
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
Fig. 4. On-state current vs. diode
forward voltage
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 6. On-resistance variation
vs. junction temperature
Fig 5. Breakdown voltage variation
vs. junction temperature
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 4.0
3/6
SW630D
Fig. 7. Gate charge characteristics
Fig. 8. Capacitance Characteristics
Fig. 9. Maximum safe operating area(TO-220)
Fig. 10. Maximum safe operating area(TO-252)
Fig. 11. Transient thermal response curve(TO-220)
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 4.0
4/6
SW630D
Fig. 12. Transient thermal response curve(TO-252)
Fig. 13. Gate charge test circuit & waveform
Fig. 14. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 4.0
5/6
SW630D
Fig. 15. Unclamped Inductive switching test circuit & waveform
Fig. 16. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
V
DS
L
di/dt
I
S
I
S
(DUT)
I
RM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 4.0
6/6
