Samwin-SWD7N65DA
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SW7N65DA
N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET
Features
TO-262N
TO-252
TO-251N
BV
DSS
: 650V
I
D
: 7A
⚫
High ruggedness
⚫
Low R
DS(ON)
(Typ 1.4
Ω
)@V
GS
=10V
⚫
Low Gate Charge (Typ 25nC)
⚫
Improved dv/dt Capability
⚫
100% Avalanche Tested
R
DS(ON)
: 1.4Ω
2
1
1
1
2
2
2
3
3
1
3
⚫
Application: LED , Charger, PC Power
1. Gate
2. Drain
3. Source
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
TO-251N
TO-262N
TO-252
Packaging
1
2
3
SW N 7N65DA
SW J 7N65DA
SW D 7N65DA
SW7N65DA
SW7N65DA
SW7N65DA
TUBE
TUBE
REEL
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-251N TO-262N
TO-252
V
DSS
Drain to source voltage
650
V
A
Continuous drain current (@T
C
=25
o
C)
Continuous drain current (@T
C
=100
o
C)
Drain current pulsed
7*
4.4*
28
I
D
A
I
DM
V
GS
E
AS
(note 1)
A
Gate to source voltage
±
30
323
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
E
AR
dv/dt
25
5
Total power dissipation (@T
C
=25
o
C)
Derating factor above 25
o
C
176
1.4
184
154.3
1.2
P
D
1.5
W/
o
C
o
C
T
STG
, T
J
Operating junction temperature & storage temperature
-55 ~ + 150
Maximum lead temperature for soldering
T
L
300
o
C
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-251N TO-262N
TO-252
0.81
R
thjc
R
thja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
0.71
83
0.68
65
o
C/W
o
C/W
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 6.0
1/7
SW7N65DA
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
650
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
V
DS
=650V, V
GS
=0V
0.58
V/
o
C
/ ΔT
J
coefficient
1
uA
uA
nA
nA
I
DSS
Drain to source leakage current
V
DS
=520V, T
C
=125
o
C
V
GS
=30V, V
DS
=0V
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
100
-100
I
GSS
V
GS
=-30V, V
DS
=0V
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=3A
2.5
4.5
1.7
V
Ω
S
Drain to source on state resistance
Forward transconductance
1.4
5.7
V
DS
=30V, I
D
=3.5A
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
975
92
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=25V, f=1MHz
pF
ns
9.4
16
V
DS
=325V, I
D
=7A, R
G
=25Ω,
V
GS
=10V
31
t
d(off)
t
f
Turn off delay time
Fall time
50
(note 4,5)
28
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
25
V
DS
=520V, V
GS
=10V, I
D
=7A,
Ig=5mA
Q
gs
Q
gd
R
g
6.3
11
nC
(note 4,5)
V
DS
=0V, Scan F mode
2.1
Ω
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
I
S
I
SM
V
SD
t
rr
7
A
A
Integral reverse p-n Junction
diode in the MOSFET
28
1.4
Diode forward voltage drop.
Reverse recovery time
I
S
=7A, V
GS
=0V
V
468
3.5
ns
uC
I
S
=7A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Reverse recovery charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =13.2mH, IAS =7A, VDD=50V, RG=25Ω, Starting TJ = 25
o
C
I
SD
≤ 7A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 6.0
2/7
SW7N65DA
Fig. 2. Transfer Characteristics
Fig. 1. On-state characteristics
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On-state current vs. diode
forward voltage
Fig. 6. On-resistance variation
vs. junction temperature
Fig 5. Breakdown voltage variation
vs. junction temperature
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 6.0
3/7
SW7N65DA
Fig. 8. Capacitance Characteristics
Fig. 7. Gate charge characteristics
Fig. 9. Maximum safe operating area(TO-251N)
Fig. 10. Maximum safe operating area(TO-262N)
Fig. 11. Maximum safe operating area(TO-252)
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 6.0
4/7
SW7N65DA
Fig. 12. Transient thermal response curve(TO-251N)
Fig. 13. Transient thermal response curve(TO-262N)
Fig. 14. Transient thermal response curve(TO-252)
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 6.0
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SW7N65DA
Fig. 15. Gate charge test circuit & waveform
Fig. 16. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Fig. 17. Unclamped Inductive switching test circuit & waveform
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 6.0
6/7
SW7N65DA
Fig. 18. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
V
DS
L
di/dt
I
S
I
S
(DUT)
I
RRM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 6.0
7/7
