Samwin-SWF7N65D
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SW7N65D
N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-251U/TO-252/TO-
220F/TO-220SF/TO-262N/DFN5*6/TO-220FT MOSFET
Features
TO-220
TO-251
TO-251N
TO-251U
TO-252
BV
DSS
: 650V
I
D
: 7A
⚫
High ruggedness
⚫
Low R
DS(ON)
(Typ 1.1
Ω)
@V
GS
=10V
⚫
Low Gate Charge (Typ 30nC)
⚫
Improved dv/dt Capability
⚫
100% Avalanche Tested
⚫
Application:Charger,LED,
PC Power
R
DS(ON)
: 1.1Ω
1
1
1
1
1
2
2
2
2
2
3
3
3
3
3
D
TO-220FT
TO-262N
DFN5*6
TO-220SF
TO-220F
G
1
2
3
4
8
7
6
5
S
1
1
1
1
2
2
2
2
3
3
3
3
TO-220(F/SF)&TO-251(N)&TO-252&TO-262N
：
1. Gate
2. Drain
3. Source
DFN5*6
：
4. Gate
5,6,7,8. Drain
1,2,3,4. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
2
3
4
5
6
7
8
Sales Type
SW P 7N65D
SW I 7N65D
SW N 7N65D
SW UI 7N65D
SW D 7N65D
SW F 7N65D
SW MN 7N65D
SW J 7N65D
SW HA 7N65D
SW Y 7N65D
Marking
Package
TO-220
TO-251
TO-251N
TO-251U
TO-252
TO-220F
TO-220SF
TO-262N
DFN5*6
Packaging
TUBE
TUBE
TUBE
TUBE
REEL
TUBE
TUBE
TUBE
REEL
TUBE
SW7N65D
SW7N65D
SW7N65D
SW7N65D
SW7N65D
SW7N65D
SW7N65D
SW7N65D
SW7N65D
SW7N65D
9
10
TO-220FT
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO251/TO251 TO25 TO220F/TO22
TO262 DFN5*
TO220
N/TO251U
2
0SF/TO220FT
N
6
V
DSS
I
D
Drain to source voltage
650
7*
V
A
Continuous drain current (@T
C
=25
o
C)
Continuous drain current (@T
C
=100
o
C)
4.4*
28
A
I
DM
V
GS
E
AS
Drain current pulsed
(note 1)
A
Gate to source voltage
±
30
430
40
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Total power dissipation (@T
a
=25
o
C)
Derating factor above 25
o
C
(note 2)
mJ
mJ
V/ns
W
E
AR
dv/dt
(note 1)
(note 3)
5
208.3
1.67
173.6
1.39
27.8
186.6
1.5
P
D
2.4
W
0.22
0.02 W/
o
C
Operating junction temperature & storage
temperature
Maximum lead temperature for soldering
T
STG
, T
J
T
L
-55 ~ + 150
300
o
C
o
C
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 11.0
1/8
SW7N65D
Thermal characteristics
Value
TO220F/TO220 TO2 DFN5*
Symbol
Parameter
Unit
TO251/TO251
N/TO251U
TO220
TO252
SF/TO220FT 62N
6
R
thjc
R
thja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
0.6
60
0.72
82
4.5
50
0.67
o
C/W
61 51.4
o
C/W
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user’s
board design.
DFN5*6 R
thja
：
51.4
o
C/W on a 1 in
2
pad of 2oz copper.
Electrical characteristic
( T
J
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
650
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
0.51
V/
o
C
/ ΔT
J
coefficient
V
DS
=650V, V
GS
=0V
V
DS
=520V, T
J
=125
o
C
V
GS
=30V, V
DS
=0V
1
uA
uA
nA
I
DSS
Drain to source leakage current
Gate to source leakage current, forward
Gate to source leakage current, reverse
50
100
I
GSS
V
GS
=-30V, V
DS
=0V
-100
nA
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
2.5
4.5
1.4
V
Ω
Ω
S
V
GS
=10V, I
D
= 3.5A, T
J
=25
o
C
V
GS
=10V, I
D
= 3.5A, T
J
=125
o
C
V
DS
=30 V, I
D
=3.5A
1.1
2.4
6.3
Drain to source on state resistance
Forward transconductance
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
1230
108
16
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=25V, f=1MHz
pF
ns
16
V
DS
=350V, I
D
=7A, R
G
=25Ω
36
t
d(off)
t
f
Turn off delay time
Fall time
(note 4,5)
83
40
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
30
V
DS
=520V, V
GS
=10V, I
D
=7A
(note 4,5)
Q
gs
Q
gd
R
g
5
nC
15
V
DS
=0V, Scan F mode
1.7
Ω
Source to drain diode ratings characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Parameter
Continuous source current
Pulsed source current
Diode forward voltage drop.
Reverse recovery time
Test conditions
Integral reverse p-n Junction
Min.
Typ.
Max. Unit
7
28
1.4
A
A
V
diode in the MOSFET
I
S
=7A, V
GS
=0V
I
S
=7A, V
GS
=0V,
436
3.6
ns
uC
Q
rr
Reverse recovery charge
dI
F
/dt=100A/us
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 17.5mH, I
AS
= 7A, V
DD
= 50V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤ 7A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 11.0
2/8
SW7N65D
Fig. 1. On-state characteristics
Fig. 2. Transfer Characteristics
Fig. 4. On-state current vs. diode
forward voltage
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 6. On resistance variation
vs. junction temperature
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 11.0
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SW7N65D
Fig. 7. Gate charge characteristics
Fig. 8. Capacitance Characteristics
Fig. 10. Maximum safe operating area
(TO-251/TO-251N/TO-251U/TO-252)
Fig. 9. Maximum safe operating area(TO-220)
Fig. 11. Maximum safe operating area
(TO-220F/TO-220SF/TO-220FT)
Fig. 12. Maximum safe operating area(TO-262N)
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 11.0
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SW7N65D
Fig. 13. Maximum safe operating area(DFN5*6)
Fig. 14. Transient thermal response curve(TO-220)
Fig. 15. Transient thermal response curve
(TO-251/TO-251N/TO-251U/TO-252)
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 11.0
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SW7N65D
Fig. 16. Transient thermal response curve(TO-220F/TO-220SF/TO-220FT)
Fig. 17. Transient thermal response curve(TO-262N)
Fig. 18. Transient thermal response curve(DFN5*6)
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 11.0
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SW7N65D
Fig. 19. Gate charge test circuit & waveform
Fig. 20. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Fig. 21. Unclamped Inductive switching test circuit & waveform
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 11.0
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SW7N65D
Fig. 22. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
V
DS
L
di/dt
I
S
I
S
(DUT)
I
RRM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May. 2022. Rev. 11.0
8/8
