Samwin-SWHA065R03VLT
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SW065R03VLT
N-channel Enhanced mode DFN5*6 MOSFET
Features
BV
DSS
: 30V
I
D
: 58A
DFN5*6
⚫
High ruggedness
⚫
Low R
DS(ON)
(Typ 9.7m
Ω
)@V
GS
=4.5V
(Typ 6.4m
Ω
)@V
GS
=10V
⚫
Low Gate Charge (Typ 34nC)
⚫
Improved dv/dt Capability
⚫
100% Avalanche Tested
1
2
3
4
8
7
6
5
R
DS(ON)
: 9.7mΩ@VGS=4.5V
6.4mΩ@VGS=10V
⚫
Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
D
4. Gate
5,6,7,8.Drain 1,2,3.Source
G
General Description
S
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics,
including fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics.
Order Codes
Item
1
Sales Type
Marking
Package
DFN5*6
Packaging
REEL
SW HA 065R03VLT
SW065R03VLT
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
V
DSS
Drain to source voltage
Continuous drain current (@T
c
=25
o
C)
30
58*
A
I
D
Continuous drain current (@T
c
=100
o
C)
Drain current pulsed
36*
A
I
DM
(note 1)
232
A
Continuous drain current (@T
a
=25
o
C)
Continuous drain current (@T
a
=70
o
C)
Gate to source voltage
14
A
I
DSM
11
A
V
GS
E
AS
±
20
V
Single pulsed avalanche energy
Repetitive avalanche energy
(note 2)
(note 1)
(note 3)
72
mJ
mJ
V/ns
W
W
o
C
E
AR
7
dv/dt
Peak diode recovery dv/dt
5
33.8
Total power dissipation (@T
c
=25
o
C)
Total power dissipation (@T
a
=25
o
C)
P
D
2.3
T
STG
, T
J
Operating junction temperature & storage temperature
-55 ~ + 150
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
Parameter
Value
3.7
Unit
o
C/W
o
C/W
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
R
thja
55
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user’s
board design.
DFN5*6 R
thja
: 55
o
C/W on a 1 in
2
pad of 2oz copper.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 0.6
1/6
SW065R03VLT
Electrical characteristic
( T
J
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
30
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
V
DS
=30V, V
GS
=0V
0.02
V/
o
C
/ ΔT
J
coefficient
1
uA
uA
nA
nA
I
DSS
Drain to source leakage current
V
DS
=24V, T
J
=125
o
C
V
GS
=20V, V
DS
=0V
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
100
-100
I
GSS
V
GS
=-20V, V
DS
=0V
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
1.2
2.2
11
V
V
GS
=4.5V, I
D
=10A,T
J
=25
o
C
V
GS
=10V, I
D
=15A,T
J
=25
o
C
V
GS
=10V, I
D
=15A,T
J
=125
o
C
V
DS
=5V, I
D
=15A
9.7
6.4
9.5
40
mΩ
mΩ
mΩ
S
Drain to source on state resistance
Forward transconductance
7.4
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
1529
198
196
6
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=15V, f=1MHz
pF
ns
V
DS
=15V, I
D
=30A, R
G
=4.7Ω,
V
GS
=10V
26
t
d(off)
t
f
Turn off delay time
Fall time
21
(note 4,5)
12
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
35
V
DS
=24V, V
GS
=10V, I
D
=30A ,
I
G
=3mA
Q
gs
Q
gd
R
g
5
nC
(note 4,5)
11
V
DS
=0V, Scan F mode
1.4
Ω
Source to drain diode ratings characteristics
Symbol
I
S
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
58
232
1.4
A
A
Integral reverse p-n Junction
diode in the MOSFET
I
SM
V
SD
t
rr
Diode forward voltage drop.
Reverse recovery time
I
S
=45A, V
GS
=0V
V
7.4
1.4
ns
nC
I
S
=30A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Reverse recovery charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =0.5mH, I
AS
=14A, V
DD
=25V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤30A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 0.6
2/6
SW065R03VLT
Fig. 2. Transfer Characteristics
Fig. 1. On-state characteristics
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On-state current vs. diode
forward voltage
Fig. 6. On-resistance variation
vs. junction temperature
Fig 5. Breakdown voltage variation
vs. junction temperature
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 0.6
3/6
SW065R03VLT
Fig. 8. Capacitance Characteristics
Fig. 7. Gate charge characteristics
Fig. 9. Maximum safe operating area
Fig. 10. Maximum drain current vs. case
temperature
Fig. 11. Transient thermal response curve
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 0.6
4/6
SW065R03VLT
Fig. 12. Gate charge test circuit & waveform
Fig. 13. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 0.6
5/6
SW065R03VLT
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
V
DS
L
di/dt
I
S
I
S
(DUT)
I
RRM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 0.6
6/6
