Samwin-SWHA088R06VT
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SW088R06VT
N-channel Enhanced mode DFN5*6 MOSFET
DFN5*6
Features
BV
DSS
: 60V
I
D
: 50A
High ruggedness
Low R
DS(ON)
(Typ 9.9m
Ω
)@V
GS
=4.5V
(Typ 8.3m
Ω
)@V
GS
=10V
1
2
3
4
8
7
6
5
R
DS(ON)
: 9.9m
Ω
@V
GS
=4.5V
8.3m
Ω
@V
GS
=10V
Low Gate Charge (Typ 49nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Electronic Ballast, Motor
Control Synchronous Rectification,
Inverter
D
4.Gate 5,6,7,8.Drain
1,2,3.Source
G
S
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
Sales Type
Marking
Package
DFN5*6
Packaging
REEL
SW HA 088R06VT
SW088R06VT
Absolute maximum ratings
Symbol
Parameter
Value
60
Unit
V
V
DSS
Drain to source voltage
Continuous drain current (@T
C
=25
o
C)
Continuous drain current (@T
C
=100
o
C)
50*
A
I
D
33*
200
13
A
A
A
A
V
I
DM
I
DSM
V
GS
Drain current pulsed
(note 1)
Continuous drain current (@T
a
=25
o
C)
Continuous drain current (@T
a
=70
o
C)
Gate to source voltage
10
±
20
192
11
E
AS
E
AR
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
(note 1)
(note 3)
mJ
mJ
dv/dt
5
V/ns
Total power dissipation (@T
c
=25
o
C)
Total power dissipation (@T
a
=25
o
C)
40.3
W
P
D
2.8
W
T
STG
, T
J
Operating junction temperature & storage temperature
-55 ~ + 150
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
Parameter
Value
3.1
Unit
o
C/W
o
C/W
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
R
thja
45
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user’s
board design.
DFN5*6 R
thja
: 45
o
C/W on a 1 in
2
pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2021. Rev. 6.0
1/6
SW088R06VT
Electrical characteristic
( T
J
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off ch188aracteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
60
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
0.05
V/
o
C
/ ΔT
J
coefficient
V
DS
=60V, V
GS
=0V
V
DS
=48V, T
J
=125
o
C
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
1
uA
uA
nA
nA
I
DSS
Drain to source leakage current
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
100
-100
I
GSS
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
1.4
2.4
V
V
GS
=4.5V, I
D
=5A,T
J
=25
o
C
V
GS
=10V, I
D
=5A,T
J
=25
o
C
V
GS
=10V, I
D
=5A,T
J
=125
o
C
V
DS
=10V, I
D
=5A
9.9
8.3
13.3
25
12.4
10.4
m
Ω
m
Ω
m
Ω
S
Drain to source on state resistance
Forward transconductance
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
2010
207
165
12
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=30V, f=1MHz
pF
ns
V
DS
=30V, I
D
=11A, R
G
=4.7Ω,
V
GS
=10V
42
t
d(off)
t
f
Turn off delay time
Fall time
45
(note 4,5)
20
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
49
V
DS
=48V, V
GS
=10V, I
D
=11A ,
I
G
=3mA
Q
gs
Q
gd
R
g
6
nC
(note 4,5)
15
V
DS
=0V, Scan F mode
1.47
Ω
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
I
S
I
SM
50
200
1.4
A
A
Integral reverse p-n Junction
diode in the MOSFET
V
SD
Diode forward voltage drop.
Reverse recovery time
I
S
=11A, V
GS
=0V
V
t
rr
27
12
ns
nC
I
S
=11A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Reverse recovery charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =2.67mH, I
AS
=12A, V
DD
=50V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤ 11A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2021. Rev. 6.0
2/6
SW088R06VT
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
Fig. 4. On-state current vs. diode
forward voltage
Fig. 3. On-resistance variation vs. drain
current and gate voltage
Fig. 6. On-resistance variation
vs. junction temperature
Fig. 5. Breakdown voltage variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2021. Rev. 6.0
3/6
SW088R06VT
Fig. 8. Capacitance Characteristics
Fig. 7. Gate charge characteristics
Fig. 9. Maximum safe operating area
Fig. 10. Maximum drain current
vs. case temperature
Fig. 11. Transient thermal response curve
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2021. Rev. 6.0
4/6
SW088R06VT
Fig. 12. Gate charge test circuit & waveform
Fig. 13. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2021. Rev. 6.0
5/6
SW088R06VT
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
V
DS
L
di/dt
I
S
I
S
(DUT)
I
RRM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2021. Rev. 6.0
6/6
