Samwin-SWI069R06VT
| Part # | Samwin-SWI069R06VT |
Download  | Samwin-SWI069R06VT |
SW069R06VT
N-channel Enhanced mode TO-251 MOSFET
Features
TO-251
BV
DSS
: 60V
High ruggedness
Low R
DS(ON)
(Typ 7.0m
Ω
)@V
GS
=4.5V
(Typ 6.0m
Ω
)@V
GS
=10V
Low Gate Charge (Typ 83nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Electronic Ballast, Motor Control
Inverter
I
D
: 60A
R
DS(ON)
:7.0m
Ω
@V
GS
=4.5V
6.0m
Ω
@V
GS
=10V
1
2
3
2
1.Gate 2.Drain 3.Source
1
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics,
including fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics.
Order Codes
Item
1
Sales Type
Marking
Package
TO-251
Packaging
TUBE
SW I 069R06VT
SW069R06VT
Absolute maximum ratings
Symbol
Parameter
Value
60
Unit
V
V
DSS
Drain to source voltage
Continuous drain current (@T
C
=25
o
C)
60*
A
I
D
Continuous drain current (@T
C
=100
o
C)
Drain current pulsed
48*
A
I
DM
V
GS
E
AS
(note 1)
240
A
±
20
324
Gate to source voltage
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
E
AR
dv/dt
18
5
Total power dissipation (@T
C
=25
o
C)
Derating factor above 25
o
C
114
P
D
0.9
W/
o
C
o
C
T
STG
, T
J
Operating junction temperature & storage temperature
-55 ~ + 150
Maximum lead temperature for soldering
T
L
300
o
C
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
Unit
R
thjc
R
thja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
1.1
62
o
C/W
o
C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2021. Rev. 4.0
1/6
SW069R06VT
Electrical characteristic
( T
J
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
60
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
0.04
V/
o
C
/ ΔT
J
coefficient
V
DS
=60V, V
GS
=0V
1
uA
uA
nA
nA
I
DSS
Drain to source leakage current
V
DS
=48V, T
J
=125
o
C
50
Gate to source leakage current, forward
V
GS
=20V, V
DS
=0V
Gate to source leakage current, reverse
V
GS
=-20V, V
DS
=0V
100
-100
I
GSS
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
1.4
2.4
8.7
7.5
7.6
V
V
GS
=4.5V, I
D
=30A,T
J
=25
o
C
V
GS
=10V, I
D
=30A,T
J
=25
o
C
V
GS
=10V, I
D
=60A,T
J
=25
o
C
V
GS
=10V, I
D
=30A,T
J
=125
o
C
V
DS
=5V, I
D
=30A
7.0
6.0
6.1
9.0
95
m
Ω
m
Ω
m
Ω
m
Ω
S
Drain to source on state resistance
Forward transconductance
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
3850
442
354
14
V
GS
=0V, V
DS
=30V, f=1MHz
pF
ns
V
DS
=30V, I
D
=30A, R
G
=4.7Ω,
V
GS
=10V
44
t
d(off)
t
f
Turn off delay time
Fall time
65
(note 4,5)
35
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
83
V
DS
=48V, V
GS
=10V, I
D
=30A
(note 4,5)
Q
gs
Q
gd
R
g
11
nC
29
V
DS
=0V, Scan F mode
1.4
Ω
Source to drain diode ratings characteristics
Symbol
I
S
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
60
240
1.4
A
A
Integral reverse p-n Junction
diode in the MOSFET
I
SM
V
SD
t
rr
Diode forward voltage drop.
Reverse recovery time
I
S
=60A, V
GS
=0V
V
26
14
ns
nC
I
S
=30A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Reverse recovery charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =0.7mH, I
AS
=30A, V
DD
=50V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤ 30A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2021. Rev. 4.0
2/6
SW069R06VT
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
Fig. 4. On-state current vs. diode
forward voltage
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 6. On-resistance variation
vs. junction temperature
Fig 5. Breakdown voltage variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2021. Rev. 4.0
3/6
SW069R06VT
Fig. 7. Gate charge characteristics
Fig. 9. Maximum safe operating area
Fig. 11. Transient thermal response curve
Fig. 8. Capacitance Characteristics
Fig. 10. Maximum drain current vs. case
temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2021. Rev. 4.0
4/6
SW069R06VT
Fig. 12. Gate charge test circuit & waveform
Fig. 13. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2021. Rev. 4.0
5/6
SW069R06VT
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
V
DS
L
di/dt
I
S
S
(DUT)
I
RRM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2021. Rev. 4.0
6/6
