Samwin-SWI7N60D
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SW
N
0D
N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET
Features
TO-220F
TO-220
TO-251
TO-252
BV
DSS
: 600V
I
D
: 7A
⚫
High ruggedness
⚫
Low R
DS(ON)
(Typ 1.05
Ω
)@V
GS
=10V
⚫
Low Gate Charge (Typ 30nC)
⚫
Improved dv/dt Capability
⚫
100% Avalanche Tested
⚫
Application:UPS
，
Inverter
，
TV-POWER
R
DS(ON)
: 1.05
Ω
2
1
1
1
1
2
3
2
2
2
3
3
3
1. Gate
2. Drain
3. Source
1
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
3
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
2
3
4
SW F 7N60D
SW P 7N60D
SW I 7N60D
SW D 7N60D
SW7N60D
SW7N60D
SW7N60D
SW7N60D
TO-220F
TO-220
TO-251
TO-252
TUBE
TUBE
TUBE
REEL
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO220F TO220
TO251 TO252
V
DSS
I
D
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
600
7
V
A
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
4.2
28
A
I
DM
V
GS
E
AS
E
AR
(note 1)
A
Gate to Source Voltage
±
30
420
49
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
(note 2)
(note 1)
mJ
mJ
dv/dt
Peak diode Recovery dv/dt
(note 3)
5
V/ns
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
23.76
0.19
208
125
1.0
W
W/
o
C
o
C
P
D
T
STG
, T
J
T
L
1.67
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO220F TO220
TO251 TO252
R
thjc
R
thja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
5.26
0.6
60
1.0
o
C/W
o
C/W
49.21
80
Copyright@ Semipower Technology Co., Ltd.All rights reserved.
May.2022. Rev. 7.0
1/7
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N
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Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
600
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
0.47
V/
o
C
/ ΔT
J
coefficient
V
DS
=600V, V
GS
=0V
V
DS
=480V, T
C
=125
o
C
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
1
uA
uA
nA
nA
I
DSS
Drain to source leakage current
50
100
-100
Gate to source leakage current, forward
Gate to source leakage current, reverse
I
GSS
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
= 3.5A
V
GS
=30V, I
D
= 3.5A
2.5
4.5
1.2
V
Ω
S
Drain to source on state resistance
Forward Transconductance
1.05
6
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
tr
Input capacitance
1300
110
13
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=25V, f=1MHz
pF
ns
14
32
V
DS
=300V, I
D
=7A, R
G
=25Ω
(note 4
，
5)
t
d(off)
t
f
Turn off delay time
Fall time
67
35
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
30
V
DS
=480V, V
GS
=10V, I
D
=7A
(note 4
，
5)
Q
gs
Q
gd
5
nC
15
Source to drain diode ratings characteristicsa
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
I
S
I
SM
7
A
A
Integral reverse p-n Junction
diode in the MOSFET
28
1.5
V
SD
Diode forward voltage drop.
Reverse recovery time
I
S
=7A, V
GS
=0V
V
T
rr
315
3.1
ns
uC
I
S
=7A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Breakdown voltage charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 17.7mH, I
AS
= 7A, V
DD
= 50V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤
10A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
Copyright@ Semipower Technology Co., Ltd.All rights reserved.
May.2022. Rev. 7.0
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Fig. 2. On-resistance variation vs.
Fig. 1. On-state characteristics
drain current and gate voltage
Fig. 4. On state current vs. diode
forward voltage
Fig. 3. Gate charge characteristics
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ Semipower Technology Co., Ltd.All rights reserved.
May.2022. Rev. 7.0
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Fig. 7. Maximum safe operating area
（
TO-220F
）
Fig. 9. Maximum safe operating area
（
TO-220
）
Fig. 10. Capacitance Characteristics
Fig. 9. Maximum safe operating area
（
TO-251&TO-252
）
Fig. 11. Transient thermal response curve
（
TO-220F
）
Copyright@ Semipower Technology Co., Ltd.All rights reserved.
May.2022. Rev. 7.0
4/7
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Fig. 12. Transient thermal response curve
（
TO-220
）
Fig. 13. Transient thermal response curve
（
TO-251&TO-252
）
Fig. 14. Gate charge test circuit & waveform
V
GS
Same type
as DUT
Q
G
10V
V
DS
Q
GD
Q
GS
DUT
V
GS
3mA
Charge
nC
Copyright@ Semipower Technology Co., Ltd.All rights reserved.
May.2022. Rev. 7.0
5/7
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N
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Fig. 15. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Fig. 16. Unclamped Inductive switching test circuit & waveform
Fig. 17. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
V
DS
L
di/dt
I
S
I
S
(DUT)
I
RRM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
Copyright@ Semipower Technology Co., Ltd.All rights reserved.
May.2022. Rev. 7.0
6/7
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N
0D
DISCLAIMER
* All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ Semipower Technology Co., Ltd.All rights reserved.
May.2022. Rev. 7.0
7/7
