Samwin-SWN4N80D
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SW4N80D
N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-262N MOSFET
Features
TO-220F
TO-251N TO-252
TO-262N
BV
DSS
: 800V
I
D
: 4A
R
DS(ON)
: 3.2Ω
⚫
High ruggedness
⚫
Low R
DS(ON)
(Typ 3.2
Ω
)@V
GS
=10V
⚫
Low Gate Charge (Typ 19nC)
⚫
Improved dv/dt Capability
⚫
100% Avalanche Tested
⚫
Application:Adaptor, LED,
Industrial Power
2
1
2
1
1
1
2
2
2
3
3
3
3
1
1. Gate
2. Drain
3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
3
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
SW F 4N80D
SW N 4N80D
SW D 4N80D
SW J 4N80D
Marking
Package
TO-220F
TO-251N
TO-252
Packaging
TUBE
1
2
3
4
SW4N80D
SW4N80D
SW4N80D
SW4N80D
TUBE
REEL
TO-262N
TUBE
Absolute maximum ratings
Value
Symbol
Parameter
Drain to source voltage
Unit
TO-220F TO-251N
TO-252 TO-262N
V
DSS
I
D
800
4*
V
A
Continuous drain current (@T
C
=25
o
C)
Continuous drain current (@T
C
=100
o
C)
2.5*
16
A
I
DM
V
GS
E
AS
Drain current pulsed
(note 1)
A
Gate to source voltage
±
30
128
15
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating factor above 25
o
C
(note 2)
mJ
mJ
V/ns
W
E
AR
dv/dt
(note 1)
(note 3)
5
22
96
0.77
156.3
1.25
P
D
0.18
W/
o
C
o
C
T
STG
, T
J
Operating junction temperature & storage temperature
-55 ~ + 150
Maximum lead temperature for soldering
T
L
300
o
C
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-220F TO-251N TO-252
TO-262N
R
thjc
R
thja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
5.6
50
1.3
0.8
o
C/W
o
C/W
87
68.7
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 7.0
1/7
SW4N80D
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
800
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
0.75
V/
o
C
/ ΔT
J
coefficient
V
DS
=800V, V
GS
=0V
V
DS
=640V, T
C
=125
o
C
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
1
uA
uA
nA
nA
I
DSS
Drain to source leakage current
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
100
-100
I
GSS
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=2A
V
DS
=30V, I
D
=2A
2.5
4.5
3.8
V
Ω
S
Drain to source on state resistance
Forward transconductance
3.2
4
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
679
55
9.5
17
29
52
29
19
4
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=25V, f=1MHz
pF
ns
V
DS
=400V, I
D
=4A, R
G
=25Ω,
V
GS
=10V
t
d(off)
t
f
Turn off delay time
Fall time
(note 4,5)
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
V
DS
=640V, V
GS
=10V, I
D
=4A
(note 4,5)
Q
gs
Q
gd
R
g
nC
9
V
DS
=0V, Scan F mode
3.6
Ω
Source to drain diode ratings characteristics
Symbol
I
S
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
4
A
A
Integral reverse p-n Junction
diode in the MOSFET
I
SM
16
1.4
V
SD
t
rr
Diode forward voltage drop.
Reverse recovery time
I
S
=4A, V
GS
=0V
V
488
2.6
ns
uC
I
S
=4A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Reverse recovery charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =41mH, I
AS
=2.5A, V
DD
=50V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤ 4A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 7.0
2/7
SW4N80D
Fig. 2. Transfer Characteristics
Fig. 1. On-state characteristics
Fig. 4. On-state current vs. diode
forward voltage
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 6. On-resistance variation
vs. junction temperature
Fig 5. Breakdown voltage variation
vs. junction temperature
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 7.0
3/7
SW4N80D
Fig. 8. Capacitance Characteristics
Fig. 7. Gate charge characteristics
Fig. 10. Maximum safe operating area
(TO-251N/TO-252)
Fig. 9. Maximum safe operating area(TO-220F)
Fig. 11. Maximum safe operating area(TO-262N)
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 7.0
4/7
SW4N80D
Fig. 12. Transient thermal response curve(TO-220F)
Fig. 13. Transient thermal response curve(TO-251N/TO-252)
Fig. 14. Transient thermal response curve(TO-262N)
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 7.0
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SW4N80D
Fig. 15. Gate charge test circuit & waveform
Fig. 16. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Fig. 17. Unclamped Inductive switching test circuit & waveform
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 7.0
6/7
SW4N80D
Fig. 18. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
V
DS
L
di/dt
I
S
I
S
(DUT)
I
RM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 7.0
7/7
