Samwin-SWP086R68E7T
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SW086R68E7T
N-channel Enhanced mode TO-220/TO-263 MOSFET
Features
TO-220
TO-263
BV
DSS
: 68V
I
D
: 75A
⚫
High ruggedness
⚫
Low R
DS(ON)
(Typ 9.2m
Ω
)@V
GS
=10V
⚫
Low Gate Charge (Typ 64nC)
⚫
Improved dv/dt Capability
R
DS(ON)
:9.2mΩ
⚫
100% Avalanche Tested
⚫
Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
2
1
1
2
2
3
3
1
1. Gate
2.Drain 3.Source
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics,
including fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics.
Order Codes
Item
1
Sales Type
Marking
Package
Packaging
TUBE
SW P 086R68E7T
SW B 086R68E7T
SW086R68E7T
SW086R68E7T
TO-220
TO-263
2
TUBE
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
TO-263
V
DSS
I
D
Drain to source voltage
Continuous drain current (@T
C
=25
o
C)
68
75*
V
A
Continuous drain current (@T
C
=100
o
C)
Drain current pulsed
49*
A
I
DM
V
GS
E
AS
(note 1)
300
A
Gate to source voltage
±
20
150
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
E
AR
dv/dt
15
5
Total power dissipation (@T
C
=25
o
C)
Derating factor above 25
o
C
116
P
D
0.93
-55 ~ + 150
W/
o
C
o
C
T
STG
, T
J
T
L
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-220
TO-263
R
thjc
R
thja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
1.05
o
C/W
o
C/W
47
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 3.0
1/6
SW086R68E7T
Electrical characteristic
( T
J
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
68
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
V
DS
=68V, V
GS
=0V
0.07
V/
o
C
/ ΔT
J
coefficient
1
uA
uA
nA
nA
I
DSS
Drain to source leakage current
V
DS
=54V, T
J
=125
o
C
V
GS
=20V, V
DS
=0V
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
100
-100
I
GSS
V
GS
=-20V, V
DS
=0V
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
2
4
V
V
GS
=10V, I
D
=40A,T
J
=25
o
C
V
GS
=10V, I
D
=40A,T
J
=125
o
C
V
DS
=5V, I
D
=40A
9.2
16.4
46
10.8
mΩ
mΩ
S
Drain to source on state resistance
Forward transconductance
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
3039
174
173
17
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=34V, f=1MHz
pF
ns
V
DS
=34V, I
D
=30A, R
G
=4.7Ω,
V
GS
=10V
58
t
d(off)
t
f
Turn off delay time
Fall time
61
(note 4,5)
26
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
64
V
DS
=54V, V
GS
=10V, I
D
=30A ,
I
G
=3mA
Q
gs
Q
gd
R
g
16
nC
(note 4,5)
25
V
DS
=0V, Scan F mode
4.6
Ω
Source to drain diode ratings characteristics
Symbol
I
S
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
75
300
1.4
A
A
Integral reverse p-n Junction
diode in the MOSFET
I
SM
V
SD
t
rr
Diode forward voltage drop.
Reverse recovery time
I
S
=45A, V
GS
=0V
V
25
20
ns
nC
I
S
=30A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Reverse recovery charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =0.5mH, I
AS
=24.5A, V
DD
=30V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤30A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 3.0
2/6
SW086R68E7T
Fig. 2. Transfer Characteristics
Fig. 1. On-state characteristics
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On-state current vs. diode
forward voltage
Fig. 6. On-resistance variation
vs. junction temperature
Fig 5. Breakdown voltage variation
vs. junction temperature
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 3.0
3/6
SW086R68E7T
Fig. 8. Capacitance Characteristics
Fig. 7. Gate charge characteristics
Fig. 9. Maximum safe operating area
(TO-220 & TO-263)
Fig. 10. Maximum drain current vs. case
temperature(TO-220 & TO-263)
Fig. 11. Transient thermal response curve(TO-220 & TO-263)
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 3.0
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SW086R68E7T
Fig. 12. Gate charge test circuit & waveform
Fig. 13. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 3.0
5/6
SW086R68E7T
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
V
DS
L
di/dt
I
S
I
S
(DUT)
I
RM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 3.0
6/6
