Samwin-SWYN7N65D
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SW7N65D
N-channel Enhanced mode TO-220FTN MOSFET
Features
TO-220FT
BV
DSS
: 650V
I
D
: 7A
High ruggedness
Low R
DS(ON)
(Typ 1.1
Ω
)@V
GS
=10V
Low Gate Charge (Typ 30nC)
Improved dv/dt Capability
100% Avalanche Tested
R
DS(ON)
: 1.1Ω
1
2
D
3
Application:Charger,LED,
PC Power
1. Gate
2. Drain
3. Source
G
General Description
S
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
Sales Type
Marking
Package
Packaging
SW YN 7N65D
SW7N65D
TO-220FTN
TUBE
Absolute maximum ratings
Symbol
Parameter
Value
650
7*
Unit
V
V
DSS
Drain to source voltage
Continuous drain current (@T
C
=25
o
C)
Continuous drain current (@T
C
=100
o
C)
A
I
D
4.4*
28
A
I
DM
V
GS
E
AS
Drain current pulsed
(note 1)
A
Gate to source voltage
±
30
430
40
V
mJ
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
E
AR
dv/dt
(note 1)
(note 3)
mJ
5
V/ns
W
Total power dissipation (@T
C
=25
o
C)
Derating factor above 25
o
C
27.8
0.22
P
D
W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature
-55 ~ + 150
300
o
C
o
C
Maximum lead temperature for soldering
T
L
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
Value
4.5
Unit
o
C/W
o
C/W
R
thja
50
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2020. Rev. 10.0
1/6
SW7N65D
Electrical characteristic
( T
J
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
650
V
ΔBV
DSS
Breakdown voltage temperature
I
D
=250uA, referenced to 25
o
C
0.51
V/
o
C
/ ΔT
J
coefficient
V
DS
=650V, V
GS
=0V
V
DS
=520V, T
J
=125
o
C
V
GS
=30V, V
DS
=0V
1
uA
uA
nA
I
DSS
Drain to source leakage current
50
Gate to source leakage current, forward
Gate to source leakage current, reverse
100
I
GSS
V
GS
=-30V, V
DS
=0V
-100
nA
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
2.5
4.5
1.4
V
Ω
Ω
S
V
GS
=10V, I
D
= 3.5A, T
J
=25
o
C
V
GS
=10V, I
D
= 3.5A, T
J
=125
o
C
V
DS
=30 V, I
D
=3.5A
1.1
2.4
6.3
Drain to source on state resistance
Forward transconductance
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
1230
108
16
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=25V, f=1MHz
pF
ns
16
36
V
DS
=350V, I
D
=7A, R
G
=25Ω
(note 4,5)
t
d(off)
t
f
Turn off delay time
Fall time
83
40
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
30
V
DS
=520V, V
GS
=10V, I
D
=7A
(note 4,5)
Q
gs
Q
gd
R
g
5
nC
15
V
DS
=0V, Scan F mode
1.7
Ω
Source to drain diode ratings characteristics
Symbol
I
S
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
7
A
A
Integral reverse p-n Junction
diode in the MOSFET
I
SM
28
1.4
V
SD
t
rr
Diode forward voltage drop.
Reverse recovery time
I
S
=7A, V
GS
=0V
V
436
3.6
ns
uC
I
S
=7A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Reverse recovery charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 17.5mH, I
AS
= 7A, V
DD
= 50V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤ 7A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2020. Rev. 10.0
2/6
SW7N65D
Fig. 1. On-state characteristics
Fig. 2. Transfer Characteristics
Fig. 4. On-state current vs. diode
forward voltage
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 6. On resistance variation
vs. junction temperature
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2020. Rev. 10.0
3/6
SW7N65D
Fig. 7. Gate charge characteristics
Fig. 8. Capacitance Characteristics
Fig. 9. Maximum safe operating area
Fig. 10. Transient thermal response curve
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2020. Rev. 10.0
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SW7N65D
Fig. 11. Gate charge test circuit & waveform
Fig. 12. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Fig. 13. Unclamped Inductive switching test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2020. Rev. 10.0
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SW7N65D
Fig. 14. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
–
V
GS
(DRIVER)
V
DS
L
di/dt
I
S
I
S
(DUT)
I
RRM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
Same type
as DUT
10V
GS
V
DD
V
DS
(DUT)
V
F
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2020. Rev. 10.0
6/6
