Sanken-Elec-2SA1673

2 S A1 6 7 3  

Silicon PNP Epitaxial Planar Transistor

(Complement to type 2SC4388)  

Application :

Audio and General Purpose  

External Dimensions

FM100(TO3PF)  

(Ta=25°C)  

■

Absolute maximum ratings  

■

Electrical Characteristics  

(Ta=25°C)  

R

a

t

in

g

s  

R

a

t

in

g

s  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Unit  

Symbol  

Cond

i

ti

o

ns  

Unit  

±0.2  

5.5  

±0.2  

15.6  

±0.2  

3.45  

–180  

I

CBO  

–10

max  

–10

max  

–180

m

i

n  

50

m

i

n  

µ

A  

µ

A  

V

V

CB

=

–

180V  

V

–180  

I

EBO  

V

EB

=

–

6V  

V

–6  

V

(BR)CEO  

h

FE  

I

C

=

–

50mA  

V

±0.2  

ø3.3  

V

CE

=

–

4

V

, I

C

=

–

3A  

I

C

=

–

5A, I

B

=

–

0.5A  

V

CE

=

–

12

V

, I

E

=

0.5A  

V

CB

=

–

10

V

, f

=

1

M

Hz  

–15  

–4  

A

a

b

–2.0

max  

20

typ  

I

B  

V

CE

(

s

a

t

)  

f

T  

V

MHz  

pF  

A

P

C  

85(

T

c

=25°C)  

150  

W

°C  

°C  

1.75  

2.15  

0.8  

500

typ  

Tj  

C

OB  

T

s

t

g  

to  

–55 +150  

to  

to  

to  

h

FE

R

a

nk O(50

 

100), P(70

 

140),

Y

(

90

 

180)  

+0.2  

-0.1  

1.05  

+0.2  

±0.1  

1.5  

±0.1  

0.65  

-0.1  

5.45  

5.45  

1.5  

3.35  

■

Typical Switching Characteristics (Common Emitter)  

4.4  

C

V

BB2  

(

V

)  

I

B1  

(A)  

t

on  

(

µ

s

)  

V

CC  

(

V

)  

R

L  

(

Ω

)  

I

C  

(A)  

V

BB1  

(

V

)  

I

B2  

(A)  

t

s

t

g  

(

µ

s

)  

t

f  

(

µ

s

)  

Weight : Approx 6.5g  

a. Part No.  

b. Lot No.  

B

E

5

–1  

0.6typ  

–40  

4

–10  

–10  

1

0.9typ  

0.2typ  

–

–

–

I

C

V

C

E

Characteristics

(Typical)  

V

C

E

(

sat) I

B

Characteristics

(Typical)  

I

C

V

B

E

Temperature Characteristics

 

(Typical)  

(V

C

E

=

–4V)  

–15  

–15  

–10  

– 3  

–10  

–5  

0

–2  

–1  

–50mA  

–5  

I

C

=

–10A  

I

B

=

–20mA  

–5A  

0

0

0

–1  

–2  

–3  

–4  

0

–0.5  

–1.0  

–1.5  

–2.0  

0

–1  

–2  

Collector-Emitter Voltage V

C

E

(

V)  

Base Current I

B

(

A)  

Base-Emittor Voltage V

B

E

(

V)  

–

–

–

j-a

t Characteristics  

h

F

E

I

C

Characteristics

(Typical)  

h

F

E

I

C

Temperature Characteristics

 

(Typical)  

θ

(V

C

E

=

–4V)  

(V

C

E

=

–4V)  

3

200  

300  

125˚C  

25˚C  

Typ  

100  

1

–30˚C  

100  

50  

0.5  

50  

20  

–0.02  

10  

–0.02  

0.1  

–0.1  

–0.5 –1  

–5 –10

 

–15  

–0.1  

–0.5 –1  

Collector Current I

C

(

A)  

–5 –10

 

–15  

1

10  

100  

Time t(ms)  

1000 2000  

Collector Current I

C

(

A)  

–

f

T

I

E

Characteristics

(Typical)  

Safe Operating Area

(Single Pulse)  

–

Pc Ta

 

Derating  

(V

C

E

=

–12V)  

–40  

30  

20  

100  

80  

–10  

–5  

Typ  

60  

–2  

–1  

40  

10  

–0.5  

Without Heatsink  

Natural Cooling  

20  

–0.2  

–0.1  

Without Heatsink  

3.5  

0

0

0.02  

–3  

–10  

–100  

–200  

0.1  

1

10  

0

25  

50  

75  

100  

125  

150  

Collector-Emitter Voltage V

C

E

(

V)  

Ambient Temperature Ta(˚C)  

Emitter Current I

E

(

A)  

26