Sanken-Elec-2SC4468

2 S

C

4 4 6 8  

Silicon NPN Triple Diffused Planar Transistor

(Complement to type 2SA1695)  

Application :

Audio and General Purpose  

■

Absolute maximum ratings  

■

Electrical Characteristics  

External Dimensions

MT-100(TO3P)  

(Ta=25°C)  

(Ta=25°C)  

Symbol  

R

a

t

in

g

s  

Symbol  

I

CBO  

Cond

i

ti

o

ns  

R

a

t

in

g

s  

10

max  

10

max  

140

m

i

n  

50

m

i

n  

Unit  

µ

A  

µ

A  

V

Unit  

±0.2  

4.8  

±0.4  

15.6  

V

CBO  

V

CEO  

V

EBO  

I

C  

V

CB

=

200V  

200  

V

±0.1  

2.0  

9.6  

I

EBO  

V

EB

=

6V  

140  

V

V

(BR)CEO  

h

FE  

I

C

=

50mA  

6

V

a

b

±0.1  

ø3.2  

V

CE

=

4

V

, I

C

=

3A  

I

C

=

5

A

, I

B

=

0.5A  

V

CE

=

12

V

, I

E

=

–

0.5A  

V

CB

=

10

V

, f

=

1

M

Hz  

10  

4

A

I

B  

V

CE

(

s

a

t

)  

f

T  

0.5

max  

20

typ  

V

MHz  

pF  

A

P

C  

100(

T

c

=25°C)  

150  

W

°C  

°C  

2

Tj  

C

OB  

250

typ  

3

T

s

t

g  

+0.2  

-0.1  

+0.2  

-0.1  

–55 to +150  

1.05  

0.65  

1.4  

h

FE

R

a

nk O(50

 

to100), P(70 to140),

Y

(

90 to180)  

±0.1  

±0.1  

5.45  

5.45  

■

Typical Switching Characteristics (Common Emitter)  

B

C

E

V

CC  

(

V

)  

R

L  

(

Ω

)  

I

C  

(A)  

V

BB1  

(

V

)  

V

BB2  

(

V

)  

I

B1  

(A)  

I

B2  

(A)  

t

s

t

g  

(

µ

s

)  

t

f  

(

µ

s

)  

t

on  

(

µ

s

)  

Weight : Approx 6.0g  

a. Part No.  

60  

12  

5

10  

–5  

0.5  

–0.5  

4.32

typ  

0.40

typ  

0.24

typ  

b. Lot No.  

–

–

–

I

C

V

C

E

Characteristics

(Typical)  

V

C

E

(

sat) I

B

Characteristics

(Typical)  

I

C

V

B

E

Temperature Characteristics

 

(Typical)  

(V

C

E

=

4V)  

10  

10  

8

3

8

6

4

2

0

2

1

6

4

2

0

I

C

=

10A  

I

B

=

10mA  

5A  

0

0

1

2

3

4

0

0.5  

1.0  

1.5  

2.0  

0

1

2

Collector-Emitter Voltage V

C

E

(

V)  

Base Current I

B

(

A)  

Base-Emittor Voltage V

B

E

(

V)  

–

–

–

j-a

t Characteristics  

h

F

E

I

C

Characteristics

(Typical)  

h

F

E

I

C

Temperature Characteristics

 

(Typical)  

θ

(V

C

E

=

4V)  

(V

C

E

=

4V)  

3

200  

300  

125˚C  

Typ  

100  

50  

1

100  

50  

25˚C  

0.5  

–30˚C  

20  

0.02  

20  

0.02  

0.1  

1

10  

100  

Time t(ms)  

1000 2000  

0.1  

0.5  

1

5

10  

0.1  

0.5  

1

5

10  

Collector Current I

C

(

A)  

Collector Current I

C

(

A)  

–

f

T

I

E

Characteristics

(Typical)  

Safe Operating Area

(Single Pulse)  

–

Pc Ta

 

Derating  

(V

C

E

=

12V)  

100  

30  

40  

30  

20  

10  

5

Typ  

50  

1

0.5  

10  

0

Without Heatsink  

Natural Cooling  

Without Heatsink  

3.5  

0

0.1  

3

5

10  

50  

100  

200  

–0.02  

–0.1  

–1  

Emitter Current I

E

(

A)  

–10  

0

25  

50  

75  

100  

125  

150  

Collector-Emitter Voltage V

C

E

(

V)  

Ambient Temperature Ta(˚C)  

109