Sanken-Elec-2SC6145
| Part # | Sanken-Elec-2SC6145 |
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Silicon NPN Epitaxial Planar Transistor
2SC6145
Data Sheet
Description
Package
product has constant h
FE
characteristics in a wide current
range, providing high-quality audio sounds.
TO3P-3L
(4)
Features
●
Complementary to 2SA2223
●
LAPT (Linear Amplifier Power Transistor)
●
High Transition Frequency
●
Bare Lead Frame: Pb-free (RoHS Compliant)
(1) (2) (3)
(2)(4)
(1) Base
(2) Collector
(3) Emitter
(4) Collector
(1)
Application
●
Audio Power Amplifer
(3)
Not to scale
2SC6145-DSE Rev.1.1
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2SC6145
Absolute Maximum Ratings
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Conditions
Rating
Unit
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
230
230
V
5
V
15
4
A
Base Current
I
B
A
Collector Power Dissipation
Operating Junction Temperature
Storage Temperature
P
C
T
C
= 25 °C
160
W
°C
°C
T
J
150
T
STG
−
55 to 150
Thermal Characteristics
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
R
θJC
Conditions
Min.
Typ.
Max.
0.78
Unit
Thermal Resistance
(Junction to Case)
Thermal Resistance
(Junction to Ambient)
—
—
°C/W
R
θJ
A
—
—
35.7
°C/W
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
I
C
O
Conditions
Min.
—
Typ.
—
Max.
10
Unit
µA
Collector Cut-off Current
Emitter Cut-off Current
V
CB
= 230
V, I
E
= 0 A
V
EB
= 5
V, I
C
= 0 A
I
EBO
—
—
10
µA
Collector to Emitter Breakdown
Voltage
V
(BR)CEO
I
C
= 25 mA
230
40
—
—
—
—
140
0.5
—
V
—
DC Current Gain
h
FE
V
CE(sat)
f
T
V
CE
= 4 V, I
C
= 5 A
Collector to Emitter Satura
on
Voltage
I
C
= 5 A, I
B
= 0.5 A
—
V
Transition Frequency
V
CE
= 12 V, I
E
=
−
2 A
—
60
MHz
pF
V
CB
= 10 V, I
E
= 0 A,
f = 1 MHz
Collector Outpu
apacitance
C
OB
—
250
—
h
FE
Rank
For the marking area of the rank, see the Marking Diagram.
Rank
h
FE
R
O
Y
40 to 80
50 to 100
70 to 140
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2SC6145
Rating and Characteristic Curves
Single Pulse
Collector-Emitter Voltage, V
CE
(V)
Figure 1.
Safe Operating Area
Ambient Temperature, T
C
(°C)
Figure 2.
Power Dissipation vs. Ambient
Temperature
Collector-Emitter Voltage, V
CE
(V)
Base Current, I
B
(V)
Figure 3.
Collector Current vs. Collector-Emitter
Voltage
Figure 4.
Collector-Emitter Saturation Voltage vs.
Base Current
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2SC6145
V
CE
= 4 V
V
CE
= 4 V
Base-Emitter Voltage, V
BE
(V)
Collector Current, I
C
(A)
Figure 6.
DC Current Gain vs. Collector Current
Figure 5.
Collector Current vs. Base-Emitter Voltage
V
CE
= 12 V
Typ.
Emitter Current, I
E
(A)
Figure 7.
Transition Frequency vs. Emitter Current
2SC6145-DSE Rev.1.1
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2SC6145
Pulse Width (ms)
Figure 8.
Transient Thermal Resistance
2SC6145-DSE Rev.1.1
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2SC6145
Physical Dimensions
●
TO3P-3L
4.8
±
0.2
2
±
0.1
15.6
±
0.3
Bate burr
Bate burr
+0.2
-0.3
1.7
+0.2
-0.1
+0.2
-0.1
+0.2
-0.1
2.15
3.15
1.05
+0.2
0.65
±
0.1
5.45
5.45
±
0.1
-0.1
(Roots of pins)
(Roots of pins)
15.8
±
0.5
0.5
0.5
0.5
Plan view
Side view
1
2
3
NOTES:
– Gate
burr: 0.3 mm (max.)
– All
dimensions in millimeters
– Bare
lead frame: Pb-free (RoHS compliant)
–
When soldering the product, be sure to minimize the working time within the following limits:
260 ± 5 °C
10 ± 1 s, 2 times (flow)
380 ± 10 °C
3.5 ± 0.5 s, 1 time (soldering iron)
–
Soldering should be at a distance of at least 1.5 mm from the body of the product.
– The
recommended screw torque for TO3P: 0.686
N∙m to 0.882 N∙m
(7
kgf∙cm to 9 kgf∙cm)
2SC6145-DSE Rev.1.1
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2SC6145
Marking Diagram
C 6 1 4 5
YM
Specific Device Code (See Table 1)
X
Lot Number
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
X is the h
FE
rank
(1) (2) (3)
Table 1.
Specific Device Code
Specific Device Code
C6145
Part Number
2SC6145
2SC6145-DSE Rev.1.1
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2SC6145
Important Notes
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“
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”
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DSGN-CEZ-16003
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