SanRex-Corporation-PD130FG80

Part #SanRex-Corporation-PD130FG80
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SanRex-Corporation-PD130FG80
THYRISTOR MODULE  
(
)
PD,PE  
PK 130FG  
UL;E7610
2
(
M
)  
Power Thyristor/Diode Module
PK130FG
series are designed for various rectifier  
circuits and power controls. For your circuit application, following internal connections  
and wide voltage ratings up to 1600V are available. and electrically isolated mounting  
base make your mechanical design easy.  
92
.
0
�  
20
.
0�20
.
0�20
.
0�  
1
7
.
5�  
2
–
φ6
.
0�  
●
●
T(AV)  
T(RM
S
)  
T
S
M  
205
A
, I  
I
130
A
, I  
3500A  
d
i
/
dt 100
A
/
μ
s  
I
n
ternal Con
f
i
g
urat
i
o
ns  

●

d
v
/dt 1000
V
/
μ
s  
M5× 10�  
2
.
8�  
K2  
G2  
4
–
#
11
0
T
AB  
(
Applications
)  
V
a
r
i
o
us rect
i
fi
e
r
s  
K2  
G2  
3
2
1
K
1
G
1  
(A2)�  
(K2)�  
3
2
1
A1K2  
K1  
(A2)�  
(K2)�  
A1K2  
NAME PLATE  
A
C
/DC motor dr
i
v
e
s  
H
e
ater contro
l
s  
Li
g
ht d
i
m
mers  
PK  
PE  
8
0
.
0±0
.
2�  
K2  
3
2
1
K
1
G
1  
(A2)�  
(K2)�  
A1K2  
Stat
i
c
s
w
i
t
ches  
Unit
:  
A
PD  
■
Maximum Ratings  
(
Tj
=
25
℃
un
l
e
ss otherw
i
s
e spec
i
fi
e
d
)  
Ratings  
Symbol  
Item  
Unit  
PK130FG40  
PK130FG80  
PK130FG120  
PK130FG160  
1600  
V
RRM  
V
RSM  
V
DRM  
400  
480  
400  
800  
960  
800  
1200  
1300  
1200  
V
V
V
*
*
*
Repet
i
t
i
ve
P
eak Reverse
V
o
l
t
age  
Non-Repet
i
t
i
ve
P
eak Reverse
V
o
l
t
age  
Repet
i
t
i
ve
P
eak o
f
f
–
state
V
o
l
t
age  
1700  
1600  
Ratings  
Symbol  
Item  
Conditions  
Unit  
A
T
(
AV
)  
I
130  
*
Av
e
r
a
ge On-state Current  
*
R.M.S. On-state Current  
*
S
urge On-state Current  
S
i
n
g
l
e
p
hase, ha
l
f
w
ave, 180
°
c
onduct
i
o
n,
T
c
=
83
℃  
T
(
RM
S
)  
I
205  
A
S
i
n
g
l
e
p
hase, ha
l
f
w
ave, 180
°
c
onduct
i
o
n,
T
c
=
83
℃  
1
T
S
M  
I
Z
A
/
Cyc
l
e
, 50
/
60H , Peak
V
a
l
u
e, non-repet
i
t
i
ve  
3200
/
3500  
2
2
2
2
I t  
V
a
l
u
e
f
o
r one cyc
l
e
s
urge current  
51040  
A S  
*
I t  
GM  
P
Peak Gate Power
D
i
s
s
i
p
at
i
o
n  
Av
e
r
a
ge Gate Power D
i
s
s
i
p
at
i
o
n  
Peak Gate Current  
10  
W
W
G
(
AV
)  
P
1
FGM  
I
3
10  
A
FGM  
V
Peak Gate
V
o
l
t
age
(
F
orward)  
Peak Gate
V
o
l
t
age
(
R
everse)  
Criti
c
al Rate of R
i
s
e of On-state Current  
V
RGM  
V
5
V
1
G
D
DRM  
G
100  
d
i
/
d
t  
I
=
100m
A
,
V
=/
V
,
d
i
/
d
t
=
0.1
A
/
μ
s  
A
/
μ
s  
V
2
I
S
O  
V
A
.
C. 1m
i
n
ute  
2500  
*
I
s
o
l
a
t
i
o
n Breakdown
V
o
l
t
ag
e
(
R.M.S.
)  
Tj  
*
Operat
i
n
g Junct
i
o
n
T
e
mperature  
-
40
to +
125  
-
40
to +
125  
2.7
(
28
)  
2.7
(
28
)  
170  
℃
℃
T
s
tg  
*
S
torage
T
e
mperature  
M
o
unt
i
n
g
(
M5
)
Recommended
V
a
l
u
e 1.5-2.5
(
15-25
)  
M
o
unt
i
n
g  
T
o
rque  
N
・
m  
(㎏
f
・
B
)  
T
e
r
m
i
n
a  
(
l
M5
)
Recommended
V
a
l
u
e 1.5-2.5
(
15- 25
)  
M
a
ss  
Ty
p
i
c
al
V
a
l
u
e  
g
■
Electrical Characteristics  
Ratings  
35  
Symbol  
Item  
Conditions  
Unit  
mA  
mA  
V
DRM  
I
Repet
i
t
i
ve
P
eak o
f
f
–
state Current,max  
Repet
i
t
i
ve
P
eak Reverse Current,max  
D
DRM  
Tj
=
125
℃,
V
=
V  
RRM  
I
D
DRM  
35  
*
Tj
=
125
℃,
V
=
V  
TM  
V
T
1.6  
*
Gn-state
V
o
l
t
age,max  
Gate
T
ri
g
ger Current,max  
Gate
T
ri
g
ger
V
o
l
t
age,max  
Gate Non-Tr
i
g
ger
V
o
l
t
age,m
i
n  
Criti
c
al Rate of R
i
s
e of o
f
f
–
state
V
o
l
t
age,m
i
n  
I
=
390A  
GT  
I
D
T
50  
mA  
V
V
=
6
V
,
I
=
1A  
GT  
V
D
T
3
V
=
6
V
,
I
=
1A  
1
GD  
V
D
DRM  
0.25  
1000  
0.2
0  
V
Tj
=
125
℃,
V
=  
/

2

V  
2
D
DRM  
d
v
/
d
t  
Tj
=
125
℃,
V
=/
V  
V
/
μ
s  
℃
/
W  
3
Junct
i
o
n to case  
Rt
h
(
j
–
c
)*
T
h
ermal
I
m
pedance,max  
*
mark
:
T
h
yri
s
tor and
D
i
o
de part.
 
No mark
:
T
h
yri
s
tor part  
SanRex  
®
50 Seav
i
e
w B
l
v
d
.
 
Port Wash
i
n
gton, NY 11050-4618
 
PH.
(
5
16
)
6
25-1313 F
A
X(
5
16
)
6
25-8845 E-ma
i
l:
 
s
em
i
@
s
anrex.com  

0
.
0
01  
                                                                                                                                                                                                                                                 
0
.
0
1
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0
.
0
2
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.
0
5
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0
.
1
�
0
.
2� 0
.
5�1� 2�
 
5�
1
0  
(
PK PD,PE 130FG  
)
Gate Characteristics  
On-State Voltage max  
10
0
�  
200
0
�  
5
0
�  
100
0
�  
50
0
�  
2
0
�  
1�  
V
FG
M
(10V
)
�  
5�  
20
0
�  
10
0
�  
2�  
1�  
T
j
=
2
5
℃
�  
Maximum  
2
5
℃
�  
5
0
�  
0
.
5�  
2
0
�  
1
0
�  
0
.
5�  
V
GD  
0
.
2�  
0
.
1�  
1
0
�
2
0
�
 
5
0
�
1
0
0
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2
0
0
�
 
5
0
0
�
1
00
0
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2
00
0
�
5
00
0
�
000
0
�  
1
.
0
�  
1
.
5�  
2
.
0�  
2
.
5�  
Gate Curre
n
(
t
 
m
A
)
�  
On-State Voltag
e
(V
)
�  
Surge On-State Current Rating�  
(Non-Repetitive
)
�  
Transient Thermal Impedance  
400
0
�  
0
.
2
5
�  
350
0
�  
300
0
�  
250
0
�  
200
0
�  
150
0
�  
0
.
2�  
0
.
1
5
�  
0
.
1�  
Per One Element  
6
0
H
Z  
Junction to Case  
Per One Element  
5
0
H
Z  
100
0
�  
50
0
�  
0�  
0
.
0
5
�  
T
j
=
2
5
℃
s
tart  
0�

0
.
0
0
2
�0
.
0
0
5
�  

�
�
1�  
2�  
5�  
10  
2
0
�  
5
0
�
1
0
0
�  
Tim
e
(cycles
)
�  
Time
t
(sec
)
�