SanRex-Corporation-PK25FG80

Part #SanRex-Corporation-PK25FG80
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SanRex-Corporation-PK25FG80
THYRISTOR MODULE  
(
)
PD,PE  
PK 25FG  
UL;E7610
2
(
M
)  
Power Thyristor/Diode Module
PK25FG
series are designed for various rectifier circuits  
and power controls. For your circuit application, following internal connections and wide  
voltage ratings up to 1600V are available. and electrically isolated mounting base make  
your mechanical design easy.  
92
.
0
�  
20
.
0�20
.
0�20
.
0�  
1
7
.
5�  
2
–
φ6
.
0�  
●
●
T(AV)  
T(RM
S
)  
T
S
M  
39
A
, I  
I
25
A
, I  
700A  
d
i
/
dt 100
A
/
μ
s  
I
n
ternal Con
f
i
g
urat
i
o
ns  

●

d
v
/dt 1000
V
/
μ
s  
(
Applications
)  
V
a
r
i
o
us rect
i
fi
e
r
s  
M5× 10�  
2
.
8�  
K2  
G2  
4
–
#
11
0
T
AB  
K2  
G2  
3
2
1
K
1
G
1  
(A2)�  
(K2)�  
3
2
1
A1K2  
K1  
(K2)�  
(A2)�  
A1K2  
NAME PLATE  
A
C
/DC motor dr
i
v
e
s  
H
e
ater contro
l
s  
Li
g
ht d
i
m
mers  
PK  
PE  
8
0
.
0±0
.
2�  
K2  
3
2
1
K
1
G
1  
(A2)�  
(K2)�  
A1K2  
Stat
i
c
s
w
i
t
ches  
Unit
:  
A
PD  
■
Maximum Ratings  
(
Tj
=
25
℃
un
l
e
ss otherw
i
s
e spec
i
fi
e
d
)  
Ratings  
PK25FG40  
PD25FG40  
PE25FG40  
PK25FG80  
PD25FG80  
PE25FG80  
PK25FG120  
PD25FG120  
PE25FG120  
PK25FG160  
PD25FG160  
PE25FG160  
Symbol  
Item  
Unit  
V
RRM  
V
RSM  
V
DRM  
400  
480  
400  
800  
960  
800  
1200  
1300  
1200  
1600  
1700  
1600  
V
V
V
*
Repet
i
t
i
ve
P
eak Reverse
V
o
l
t
age  
Non-Repet
i
t
i
ve
P
eak Reverse
V
o
l
t
age  
Repet
i
t
i
ve
P
eak o
f
f
–
state
V
o
l
t
age  
*
Ratings  
Symbol  
Item  
Conditions  
Unit  
A
T
(
AV
)  
I
25  
*
Av
e
r
a
ge On-state Current  
*
R.M.S. On-state Current  
*
S
urge On-state Current  
S
i
n
g
l
e
p
hase, ha
l
f
w
ave, 180
°
c
onduct
i
o
n,
T
c
=
81
℃  
T
(
RM
S
)  
I
39  
A
S
i
n
g
l
e
p
hase, ha
l
f
w
ave, 180
°
c
onduct
i
o
n,
T
c
=
81
℃  
1
T
S
M  
I
Z
A
/
Cyc
l
e
, 50
/
60H , Peak
V
a
l
u
e, non-repet
i
t
i
ve  
640
/
700  
2
2
2
2
I t  
V
a
l
u
e
f
o
r one cyc
l
e
s
urge current  
2870  
A S  
*
I t  
GM  
P
Peak Gate Power
D
i
s
s
i
p
at
i
o
n  
Av
e
r
a
ge Gate Power D
i
s
s
i
p
at
i
o
n  
Peak Gate Current  
10  
W
W
G
(
AV
)  
P
1
FGM  
I
3
10  
A
FGM  
V
Peak Gate
V
o
l
t
age
(
F
orward)  
Peak Gate
V
o
l
t
age
(
R
everse)  
Criti
c
al Rate of R
i
s
e of On-state Current  
V
RGM  
V
5
V
1
G
D
DRM  
G
100  
d
i
/
d
t  
I
=
100m
A
,
V
=/
V
,
d
i
/
d
t
=
0.1
A
/
μ
s  
A
/
μ
s  
V
2
I
S
O  
V
A
.
C. 1m
i
n
ute  
2500  
*
I
s
o
l
a
t
i
o
n Breakdown
V
o
l
t
ag
e
(
R.M.S.
)  
Tj  
*
Operat
i
n
g Junct
i
o
n
T
e
mperature  
-
40
to +
125  
-
40
to +
125  
2.7
(
28
)  
2.7
(
28
)  
170  
℃
℃
T
s
tg  
*
S
torage
T
e
mperature  
M
o
unt
i
n
g
(
M5
)
Recommended
V
a
l
u
e 1.5-2.5
(
15-25
)  
T
e
r
m
i
n
a
l
(
M5
)
Recommended
V
a
l
u
e 1.5-2.5
(
15-25
)  
Ty
p
i
c
al
V
a
l
u
e  
M
o
unt
i
n
g  
T
o
rque  
N
・
m  
(㎏
f
・
B
)  
M
a
ss  
g
■
Electrical Characteristics  
Ratings  
5
Symbol  
Item  
Conditions  
DRM  
Unit  
mA  
mA  
V
DRM  
I
Repet
i
t
i
ve
P
eak o
f
f
–
state Current,max  
Repet
i
t
i
ve
P
eak Reverse Current,max  
D
Tj
=
125
℃,
V
=
V  
RRM  
I
D
DRM  
5
*
Tj
=
125
℃,
V
=
V  
TM  
V
T
1.6  
*
On-state
V
o
l
t
age,max  
Gate
T
ri
g
ger Current,max  
Gate
T
ri
g
ger
V
o
l
t
age,max  
Gate Non-Tr
i
g
ger
V
o
l
t
age,m
i
n  
Criti
c
al Rate of R
i
s
e of o
f
f
–
state
V
o
l
t
age,m
i
n  
I
=
75A  
GT  
I
D
T
50  
mA  
V
V
=
6
V
,
I
=
1A  
GT  
V
D
T
3
V
=
6
V
,
I
=
1A  
1
GD  
V
D
DRM  
0.25  
1000  
1.1
0  
V
Tj
=
125
℃,
V
=  
/

2

V  
2
D
DRM  
d
v
/
d
t  
Tj
=
125
℃,
V
=/
V  
V
/
μ
s  
℃
/
W  
3
Junct
i
o
n to case  
Rt
h
(
j
–
c
)*
T
h
ermal
I
m
pedance,max  
*
mark
:
T
h
yri
s
tor and
D
i
o
de part.
 
No mark
:
T
h
yri
s
tor part  
SanRex 50
 
Seav
i
e
w B
l
v
d
.
 
Port Wash
i
n
gton, NY 11050-4618
 
PH.
(
5
16
)
6
25-1313 F
A
X(
5
16
)
6
25-8845 E-ma
i
l:
 
s
em
i
@
s
anrex.com  

0
.
0
01  
                                                                                                                                                                                                                                                 
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0
5
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.
1
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0
.
2� 0
.
5�1� 2�
 
5�
1
0  
PK(PD,PE)25FG  
Gate Characteristics  
On-State Voltage max  
10
0
�  
100
0
�  
5
0
�  
50
0
�  
2
0
�  
1
0
�  
V
FG
M
(10V
)
�  
20
0
�  
10
0
�  
5�  
2�  
1�  
T
j
=
2
5
℃
�  
Maximum  
2
5
℃
�  
5
0
�  
0
.
5�  
2
0
�  
1
0
�  
V
GD  
0
.
2�  
0
.
1�  
1
0
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2
0
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5
0
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1
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2
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5
0
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1
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2
00
0
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5
00
0
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000
0
�  
0
.
5�  
1
.
0
�  
1
.
5�  
2
.
0�  
2
.
5�  
Gate Curre
n
(
t
 
m
A
)
�  
On-State Voltag
e
(V
)
�  
Surge On-State Current Rating�  
(Non-Repetitive
)
�  
Transient Thermal Impedance  
80
0
�  
1
.
2�  
70
0
�  
60
0
�  
50
0
�  
40
0
�  
30
0
�  
20
0
�  
10
0
�  
0�  
1�  
Per One Element  
0
.
8�  
0
.
6�  
0
.
4�  
0
.
2�  
6
0
H
Z  
�
Junction to Case  
Per One Element  
5
0
H
Z  
T
j
=
2
5
℃
s
tart  
0�

0
.
0
0
2
�0
.
0
0
5
�  

�
�
1�  
2�  
5�  
10  
2
0
�  
5
0
�
1
0
0
�  
Tim
e
(cycles
)
�  
Time
t
(sec
)
�