SanRex-Corporation-SBA500AA160
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THYRISTOR MODULE
SBA500AA
UL;E7610
2
（
M
）
Power Thyristor Module
SBA500AA
series are designed for high power rectifier control
applications. Two independent thyristor elements in a electrically isolated package enable
you to achieve flexible design, especially for AC switch application, idial terminal
location for bus bar connection helps both your mechanical design and mounting
procedure be more efficient. SBA series for two thyristors with blocking voltage up to
1600V are available.
138max
60±0.2
A2
60±0.2
K1
K1
6
–
φ
6
.5
4
2
5
7
I
s
o
l
a
ted mount
i
n
g base
（
Applications
）
V
a
r
i
o
us rect
i
fi
e
r
s
A
C
/
DC
m
otor dr
i
v
e
s
H
e
ater contro
l
s
Li
g
ht d
i
m
mers
K2
3
1
6
8
●
T
（
AV
）
T
（
RM
S
）
500
A
, I
7
85A
I
4-M4 depth8㎜�
G1
A1
28±1
K2
28±1
●
d
i
/
d
t 200
A
/
μ
s
●
d
v
/
d
t 500
V
/
μ
s
60±1
4-M8 depth15㎜�
K1 A2
K1
G1
Stat
i
c
s
w
i
t
ches
G2
K2
I
n
ternal Con
f
i
g
urat
i
o
ns
Unit
：
A
A1 K2
■
Maximum Ratings
Ratings
Symbol
Item
Unit
SBA500AA40
SBA500AA80
SBA500AA120 SBA500AA160
V
DRM
V
RSM
V
RRM
Repet
i
t
i
ve
P
eak O
f
f
–
State
V
o
l
t
age
Non-Repet
i
t
i
ve
P
eak Reverse
V
o
l
t
age
Repet
i
t
i
ve
P
eak Reverse
V
o
l
t
age
400
480
400
800
960
800
1200
1350
1200
1600
1700
1600
V
V
V
Symbol
Item
Conditions
Ratings
Unit
A
T
（
AV
）
I
Av
e
r
a
ge On-State Current
R.M.S. On-State Current
Surge On-State Current
500
S
i
n
g
l
e
p
hase, ha
l
f
w
ave, 180
°
c
onduct
i
o
n,
T
c
：
66
℃
T
（
RM
S
）
I
785
A
S
i
n
g
l
e
p
hase, ha
l
f
w
ave, 180
°
c
onduct
i
o
n,
T
c
：
66
℃
1
T
S
M
I
kA
／
c
y
c
l
e
, 50Hz
/
60Hz, peak
V
a
l
u
e, non-reqet
i
t
i
ve
9.1
/
10.0
2
2
2
2
I t
I t
V
a
l
u
e
f
o
r one cyc
l
e
o
f surge current
416
kA S
GM
P
Peak Gate Power
D
i
s
s
i
p
at
i
o
n
Av
e
r
a
ge Gate Power D
i
s
s
i
p
at
i
o
n
Peak Gate Current
15
W
W
G
（
AV
）
P
5
FGM
I
5
A
FGM
V
10
V
Peak Gate
V
o
l
t
ag
e
（
Forward
）
Peak Gate
V
o
l
t
ag
e
（
Reverse
）
Criti
c
al Rate of R
i
s
e of On-State Current
I
s
o
l
a
t
i
o
n Breakdown
V
o
l
t
age
（
R.M.S.
）
Operat
i
n
g Junct
i
o
n
T
e
mperature
Storage
T
e
mperature
RGM
V
5
200
V
1
G
D
DRM
G
d
i
/
d
t
I
＝
200m
A
，
V
＝／
V
，
d
I
/
d
t
＝
0.2
A
/
μ
s
A
/
μ
s
V
2
I
S
O
V
A
.
C. 1 m
i
n
ute
2500
Tj
－
40
to ＋
125
－
40
to ＋
125
4.7
℃
T
s
tg
℃
Recommended
V
a
l
u
e 2.5-3.9
(
R
ecommended
V
a
l
u
e 25-40)
Recommended
V
a
l
u
e 8.8-10
(
R
ecommended
V
a
l
u
e 90-105)
Recommended
V
a
l
u
e 1.0-1.4
Recommended
V
a
l
u
e 10-14)
Ty
p
i
c
al
V
a
l
u
e
N
･ｍ
㎏
f
･
B
N
･ｍ
㎏
f
･
B
N
･ｍ
㎏
f
･
B
g
M
o
unt
i
n
g
（
M6
）
(
4
8)
(
(
(
)
)
)
11.0
M
o
unt
i
n
g
T
e
r
m
i
n
a
l
（
M8
）
T
o
rque
(
1
15)
1.5
T
e
r
m
i
n
a
l
（
M4
）
(
1
5)
M
a
ss
1100
■
Electrical Characteristics
Symbol
Item
Conditions
Ratings
150
Unit
mA
mA
V
DRM
I
Repet
i
t
i
ve
P
eak O
f
f
–
State Current, max.
Repet
i
t
i
ve
P
eak Reverse Current, max.
Peak On-State
V
o
l
t
age, max.
Gate
T
ri
g
ger Current, max.
Gate
T
ri
g
ger
V
o
l
t
age, max.
Non-Trigger Gate,
V
o
l
t
age. m
i
n
.
Criti
c
al Rate of R
i
s
e of O
f
f
–
State
V
o
l
t
age, m
i
n
.
T
h
ermal
I
m
pedance, max.
DRM
at V
, S
i
n
g
l
e
p
hase, ha
l
f
w
ave,
T
j
＝
125
℃
RRM
I
DRM
150
at V
, S
i
n
g
l
e
p
hase, ha
l
f
w
ave,
T
j
＝
125
℃
TM
V
T
I =1500A
1.45
200
GT
I
D
T
mA
V
V
＝
6
V
，
I
＝
1A
GT
V
D
T
3
V
＝
6
V
，
I
＝
1A
1
GD
V
D
DRM
0.25
500
V
Tj
＝
125
℃，
V
＝
／
2
V
2
D
DRM
d
v
/
d
t
Tj
＝
125
℃，
V
＝／
V
，
e
xp, wave
f
o
rm
V
/
μ
s
℃
/
W
3
Junct
i
o
n to case
0.085
Rt
h
（
j
–
c
）
SanRex 50
Seav
i
e
w B
l
v
d
.
Port Wash
i
n
gton, NY 11050-4618
PH.
(
5
16
)
6
25-1313 F
A
X(
5
16
)
6
25-8845 E-ma
i
l:
s
em
i
@
s
anrex.com
SBA500AA
Gate Characteristics
On-State Characteristics
１０
０
�
１０００
０
�
５
０
�
�
５０００
２
０
�
１
０
�
５�
�
２０００
Peak Forward Gate Volta
g
（10V
）
�
Ｔ
ｊ
=
２
５
℃
�
�
１０００
２�
１�
25℃
�
－
40℃�
125℃�
５０
０
�
０
．
５�
Maximum
２０
０
�
１０
０
�
０
．
２�
０
．
１�
Maximum Gate Non-Trigger Voltage
i i
l
０
．
５�
１�
１
．
５�
２�
２
．
５�
１
０
�
２
０
�
１０
０
�
２
０
０
�
５
０
０
�
１００
０
�
２
００
０
�
５
００
０
�
１０００
０
�
５
０
�
Gate Curre
n
（
t
m
A
）
�
On-State Voltag
e
（V
）
�
Average On-State Current Vs Power Dissipation�
（Single phase half wave）
Average On-State Current Vs Maximum Allowable�
Case Temperatur
e
（Single phase half wave）
１２０
０
�
１３
０
�
Per one element
１２
０
�
１１
０
�
Per one element
１００
０
�
８０
０
�
DC
１０
０
�
９
０
�
１８
０
゜
�
π�
２
π
�
θ�
0
１２
０
゜
�
６０
０
�
４０
０
�
９
０
゜
�
360゜�
θ：Conduction Angle
８
０
�
７
０
�
６
０
�
５
０
�
４
０
�
６
０
゜
�
３
０
゜
�
π�
２
π
�
θ�
0
360゜�
θ：Conduction Angle
DC
２０
０
�
０�
１２
０
゜
�
６
０
゜
�
９
０
゜
�
１８
０
゜
�
３
０
゜
�
０�
１
０
０
�
２
０
０
�
３
０
０
�
４
０
０
�
５
０
０
�
６
０
０
�
７
０
０
�
８
０
０
�
０�
１
０
０
�
２
０
０
�
３
０
０
�
４
０
０
�
５
０
０
�
６
０
０
�
７
０
０
�
８
０
０
�
９
０
０
�
Average On-State Curre
n
（
t
A
）
�
Average On-State Curre
n
（
t
A
）
�
Surge On-State Current Rating�
（Non-Repetitive
）
�
�
Transient Thermal Impedance
０
．
１�
１２００
０
�
Per one element
Tj＝25℃ꢀstart
Per one element
１０００
０
�
８００
０
�
６００
０
�
４００
０
�
０
．
０
８
�
０
．
０
６
�
０
．
０
４
�
60Hz
Junction to Case
50Hz
０
．
０
２
�
０�
２００
０
�
０�
�
�
�
–
３
�
–
２
�
–
１
�
０�
１�
２�
１
２�
５�
１０
２
０
�
５
０
�
１
００
１０
１０
１０
１０
１０
１０
Tim
e
（cycles
）
�
Time
t
（sec
）
�
