SEMIWARE-X0405

X0405  

4A SCRs  

Features  

> Planar passivated for voltage ruggedness and reliability  

> Sensitive gate  

> Direct triggering from low power gate circuits and logic ICs  

> Surface mountable package  

A

K

G

Applications  

> General purpose switching  

> Protection circuits  

Schematic Symbol  

Description  

Planar passivated SCR with sensitive gate in a TO-252 (DPAK) surface mountable plastic package.  

These devices are intended to be interfaced directly to microcontrollers,logic integrated circuits  

and other low power gate trigger circuits.  

A

K

G

TO-252 Package  

Absolute Maximum Ratings  

Parameter  

Symbol  

V

DRM  

V

RRM  

I

T(RMS)  

I

TSM  

Conditions  

Value  

Units  

Repetitive peak off-state voltage  

600  

V

Repetitive peak reverse voltage  

RMS on-state current  

600  

T

C

=90

°

C  

tp=10ms  

tp=10ms  

4

A

Non repetitive surge peak on-state current  

I

2

t value for fusing  

30  

I

2

t  

4.5  

50  

A

2

s  

A/μs  

A

Critical rate of rise of on-state current  

Peak gate current  

dI/dt  

I

GM  

tp=20μs, T

j

=110

°

C  

T

j

=110

°

C  

1.2  

Average gate power dissipation  

Peak gate power  

P

G(AV)  

P

GM  

0.2  

W

tp=20μs, T

j

=110

°

C  

2

Storage junction temperature range  

Operating junction temperature range  

T

stg  

-40 to 150  

-40 to 110  

°C  

°C  

T

j  

Product Datasheet/Rev.G20180524A1  

H

tt

Technical Support:fae01@semiware.com  

Page 1  

X0405  

Electrical Characteristics

(T

j

=25

°

C

u

nless

 

otherwise specified)  

Value  

Units  

Parameter  

Symbol  

T

e

st Condition  

Min  

Typ  

Max  

Gate trigger current  

I

GT  

V

GT  

V

GD  

I

L  

–

–

50  

200  

0.8  

–

μA  

V

V

D

=12V R

L

=33Ω  

Gate trigger voltage  

Gate no-trigger Voltage  

Latching current  

0.6  

V

D

=V

DRM

T

j

=110

°

C  

I

G

=1.2I

GT  

0.2  

–

–

–

–

–

V

6

mA  

mA  

V/μs  

Holding current  

I

H  

I

T

=50mA  

–

5

Rate of rise of off-state voltage  

dV/dt  

V

D

=2/3V

DRM

T

j

=110

°

C

R

GK=1KΩ  

10  

–

Static Characteristics  

Parameter  

On-state voltage  

Symbol  

V

TM  

T

e

st Condition  

I

T

=4A tp=380μs  

Value  

Units  

Max  

1.5  

5

V

Repetitive peak off-state current  

Repetitive peak reverse

current  

I

DRM  

V

D

=V

DRM

V

R

=V

RRM

T

j

=25

°

C  

V

D

=V

DRM

V

R

=V

RRM

T

j

=110

°

C  

Max  

Max  

μA  

I

RRM  

100  

Thermal Resistances  

Parameter  

Symbol  

Value  

Units  

junction to case  

Rth(j-c)  

6.5  

°C

/

W  

Product Datasheet/Rev.G20180524A1  

H

ttp

Technical Support:fae01@semiware.com  

Page 2  

X0405  

Package Outline Dimensions  

Millimeters  

Symbol  

Inches  

Min  

Max  

2.400  

0.230  

0.650  

5.400  

0.620  

0.620  

6.200  

6.700  

4.700  

10.100  

1.700  

1.500  

Min  

Max  

0.094  

0.009  

0.026  

0.213  

0.024  

0.024  

0.244  

0.264  

0.185  

0.398  

0.067  

0.059  

A

A2  

B

2.200  

0.030  

0.550  

5.100  

0.450  

0.480  

6.000  

6.400  

4.400  

9.350  

1.300  

1.370  

0.087  

0.001  

0.022  

0.201  

0.018  

0.019  

0.236  

0.252  

0.173  

0.368  

0.051  

0.054  

B2  

C

C2  

D

E

G

H

L1  

L2  

V1  

V2  

4°  

4°  

0°  

8°  

0°  

8°  

86-021-3463-7654  

sales08

@

semiware

.

com  

Product Datasheet/Rev.G20180524A1  

H

tt

Technical Support:fae01@semiware.com  

Page 3