Shandong-Jingdao-Microelectronics-BC857B
| Part # | Shandong-Jingdao-Microelectronics-BC857B |
Download  | Shandong-Jingdao-Microelectronics-BC857B |
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
BC856 BC857 BC858
BC856 BC857 BC858
SOT-23
3
PNP TRANSISTOR
FEATURES
• Ideally
suited for automatic insertion
•
For Switching and AF Amplifier Applications
1
MAXIMUM RATINGS (
T
a
=25
℃
unless otherwise noted)
Symbol
Unit
Parameter
Value
2
BC856
BC857
BC858
BC856
BC857
BC858
-80
-50
-30
-65
-45
-30
1.BASE
Collector–Base Voltage
V
V
V
CBO
2.EMITTER
3.COLLECTOR
Collector–Emitter Voltage
V
CEO
Emitter–Base Voltage
V
EBO
I
C
-5
V
A
Collector Current — Continuous
Collector Power Dissipation
-0.1
200
P
C
mW
Thermal Resistance From Junction
To
A
mbient
R
thJA
625
℃/
W
Junction
T
e
mperature
Storage
T
e
mperature
℃
℃
T
J
150
T
stg
-65~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Min
Unit
Parameter
Symbol
Test conditions
Max
-80
-50
-30
BC856
BC857
BC858
V
CBO
I
C
=-10uA, I
E
= 0
Collector-base breakdown voltage
V
-65
-45
-30
BC856
BC857
BC858
V
CEO
V
EBO
I
CBO
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=-10mA, I
B
= 0
I
E
=-1uA, I
C
= 0
-5
V
BC856
BC857
BC858
V
CB
=-70
V
,
I
E
= 0
V
CB
=-45
V
,
I
E
= 0
V
CB
=-25
V
,
I
E
= 0
uA
-0.1
-0.1
V
CE
=-60
V
,
I
B
=0
V
CE
=-40
V
,
I
B
=0
V
CE
=-25
V
,
I
B
=0
BC856
BC857
BC858
I
CEO
uA
Collector cut-off current
Emitter cut-off current
-0.1 uA
I
EBO
h
FE
V
EB
=-5
V
,
I
C
= 0
250
475
800
125
220
420
BC856A,857A,858A
BC856B,857B,858B
BC857C,BC858C
V
CE
=-5
V
,
I
C
=-2mA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
I
C
=-100mA, I
B
=-5mA
I
C
=-100mA, I
B
=-5mA
V
CE(sat)
V
BE(sat)
-0.5
-1.1
V
V
V
CE
=-5
V
,
MH
Z
pF
f
T
Transition frequency
Collector capacitance
100
I
C
=-10mA,f =100MHz
4.5
C
ob
V
CB
=-10
V
, f
=
1MHz
Page 1 of 3
2021.08
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
BC856 BC857 BC858
TYPICAL CHARACTERICS
Fig.2
P
C
—— T
a
Fig.1 Static
characteristics
-10
-8
400
COMMON
EMITTER
T
a
=25
℃
I
B
=-30uA
=-27uA
=-24uA
=-21uA
=-18uA
=-15uA
=-12uA
=-9uA
=-6uA
I
B
I
B
200
I
B
I
B
-4
-0
I
B
I
B
I
B
I
B
I
B
=-3uA
0
25
50
75
100
125
150
-2
-4
-6
-8
-10
-12
AMBIENT TEMPERATURE
T
a (
℃
)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Fig.4
V
CEsat
—— I
C
Fig.3
C
ob
/ C
ib
—— V
CB
/
V
EB
-100
100
10
1
f=1MHz
=0/
Ic
=0
Ta=25
℃
I
E
-10
-1
Τ
α
=25
℃
-0.1
β
=20
-0.01
0.1
-0.1
-1
-10
-20
-1
-10
-100
-1000
REVERSE BIAS VOLTAGE V (V)
I
C
, COLLECTOR CURRENT (mA)
Fig.5 h
FE
–Ic
Fig.6
V
BEsat
—— I
C
1000
100
10
-10
-1
Τ
α
=25
℃
Τ
=25
℃
α
COMMON
EMITTER
V
CE
=-5V
β
=20
-500 -600
-0.1
-0.1
-10
-100
-600
-1
-10
-100
-1
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig.8
f
T
—— I
C
Fig.7
I
C
—— V
BE
-1000
-100
-10
1000
100
10
COMMON
EMITTER
CE
=-5V
V
-1
COMMON
EMITTER
V
CE
=-5V
T
a
=25
℃
-0.1
-0.1
-1
-10
-100
-0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
COLLECTOR CURRENT I
(mA)
C
BASE-EMMITER VOLTAGE V
BE
(V)
Page 2 of 3
2021.08
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
BC856 BC857 BC858
SOT-23 Package
Outline Dimensions
e
∠
ALL ROUND
D
A
M
e
e
E
C
a
L
1
L
H
E
SOT-23 mechanical
data
A
C
D
E
H
E
e
M
L
L
1
a
0.15
0.0
6
∠
UNIT
max
1.1
0.20 1.4
3.0 2.6 0.6
1.95
0.55 0.36
(ref) (ref)
mm
mil
min
0.9 0.08
1.2
2.8
2.2
0.35 1.7
max
12
°
43
7.9 55 118
102 24
77
min
35
3.1 47 110 87
13 67
22
14
(ref) (ref)
0.0
Marking
The recommended mounting pad size
Type number
Marking code
3A
0.8
(0.031)
BC856A
BC856B
BC857A
3B
3E
0.9
(0.039)
BC857B
BC857C
3F
0.95
(0.037)
0.95
(0.037)
2.0
(0.079)
3G
BC858A
BC858B
BC858C
3J
3K
3L
mm
(inches)
Unit
：
Page
3
of 3
2021.08
210831
