Shandong-Jingdao-Microelectronics-S8050
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山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
S8050
S8050
SOT-23
3
NPN TRANSISTOR
FEATURES
•
Complimentary to S8550
•
Collector Current: IC=0.5A
1
MAXIMUM RATINGS (
T
a
=25
℃
unless otherwise noted)
2
Symbol
Parameter
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Power Dissipation
Value
40
25
5
500
Unit
V
V
V
mA
mW
1.BASE
V
CBO
V
CEO
V
EBO
I
C
2.EMITTER
3.COLLECTOR
P
C
300
Thermal Resistance From Junction
To
A
mbient
℃/
W
R
thJA
417
Operation Junction and Storage
T
e
mperature Range
℃
T
J
,T
stg
-55~+150
CLASSIFICATION OF h
FE1
Rank
L
H
J
300-400
Range
120-200
200-350
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Test conditions
Typ
Unit
Max
Min
Parameter
V
(BR)CBO
I
C
= 100uA, I
E
= 0
I
C
= 1 mA, I
B
= 0
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
40
25
V
(BR)CEO
V
(BR)EBO
I
CBO
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
I
E
= 100uA, I
C
= 0
V
CB
= 40
V
,
I
E
= 0
V
CE
= 20
V
,
I
B
=0
V
5
uA
uA
uA
0.1
I
CEO
I
EBO
0.1
0.1
400
V
EB
= 5
V
,
I
C
=0
120
50
h
FE1
h
FE2
V
CE
= 1
V
,
I
C
= 50mA
V
CE
= 1
V
,
I
C
= 500mA
DC current gain
V
CE(sat)
V
BE(sat)
f
T
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.6
1.2
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA,I
B
=50mA
V
CE
= 6
V
,
I
C
= 20mA,
f=30MHz
150
Transition frequency
MH
Z
Page 1 of 4
2020.10
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
S8050
TYPICAL CHARACTERICS
Fig.2
P
C
—— T
a
Fig.1 Static
characteristics
120
80
400
COMMON
EMITTER
T
a
=25
℃
I
B
=400uA
=350uA
=300uA
=250uA
=200uA
=150uA
=100uA
I
B
I
B
200
I
B
I
B
40
0
I
B
I
B
I
B
=50uA
0
25
50
75
100
125
150
4
8
12
16
20
24
AMBIENT TEMPERATURE
T
a (
℃
)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Fig.4
V
CEsat
—— I
C
Fig.3
C
ob
/ C
ib
—— V
CB
/
V
EB
1000
100
10
1
f=1MHz
=0/
Ic
=0
I
E
Ta=25
℃
100
10
C
ib
Τ
=25
℃
α
1
C
ob
10
β
=10
0.1
0.1
1
20
1
10
100
1000
REVERSE BIAS VOLTAGE V (V)
I
C
, COLLECTOR CURRENT (mA)
Fig.5 h
FE
–Ic
Fig.6
V
BEsat
—— I
C
1000
100
10
1.6
1.2
Τ
=100
℃
α
Τ
α
=25
℃
Τ
α
=25
℃
0.8
0.4
COMMON EMITTER
CE
=1V
β
=10
V
0
0.1
10
100
1000
1
10
100
300 500
1
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig.8
f
T
——I
C
Fig.7
I
C
—— V
BE
1000
100
10
1000
100
10
COMMON EMITTER
V
CE
=6V
T
a
=25
℃
1
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
BASE-EMMITER VOLTAGE V
BE
(V)
Page 2 of 4
2020.10
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
S8050
SOT-23 Package
Outline Dimensions
e
∠
ALL ROUND
D
A
M
e
e
E
C
a
L
1
L
H
E
SOT-23 mechanical
data
A
C
D
E
H
E
e
M
L
L
1
a
0.0
0.15
0.0
6
∠
UNIT
max
1.1 0.15 1.4
3.0 2.6 0.5
1.95
0.55 0.36
(ref) (ref)
mm
mil
min
0.9 0.08
1.2
2.8 2.2 0.3 1.7
12
°
max
43
6
3
55 118
102 20
77
47 110 87
12 67
22
14
(ref) (ref)
min
35
Marking
The recommended mounting pad size
Type number
Marking code
J3Y
0.8
(0.031)
S8050
0.9
(0.039)
0.95
(0.037)
0.95
(0.037)
2.0
(0.079)
mm
(inches)
Unit
：
Page 3 of 4
2020.10
201012
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
S8050
SOT-23 Packing
1.The method of packaging and dimension are shown as below figure. (Dimension in mm)
7
in
X8 mm
Cover Tape
3,000 pcs per reel
Carrier Tape
SOT-23
8 reels per box
24,000 pcs per box
5 boxes per carton
120,000 pcs per carton
1
0
5
m
m
SOT-23 Embossed Carrier
T
a
pe
SOT-23
T
a
pe Leader and Trailer
Page 4 of 4
2020.10
