Shandong-Jingdao-Microelectronics-S8550-H
| Part # | Shandong-Jingdao-Microelectronics-S8550-H |
Download  | Shandong-Jingdao-Microelectronics-S8550-H |
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
S8550
S8550
SOT-23
3
PNP TRANSISTOR
FEATURES
• Complimentary
to S8050
•
Collector current: IC=0.5A
1
MAXIMUM RATINGS (
T
a
=25
℃
unless otherwise noted)
2
Symbol
Unit
V
Parameter
Value
1.BASE
2.EMITTER
3.COLLECTOR
-40
-25
-5
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Dissipation
V
CBO
V
CEO
V
V
V
EBO
I
C
A
-0.5
0.3
P
C
W
Operation Junction and Storage
T
e
mperature Range
T
J
,T
stg
℃
-55~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Unit
Max
Test conditions
Min
Symbol
V
(BR)CBO
V
(BR)CEO
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
V
I
C
=-100uA, I
E
= 0
I
C
=-1 mA, I
B
= 0
I
E
=-100uA, I
C
= 0
-40
-25
-5
V
(BR)EBO
I
CBO
V
uA
uA
uA
V
CB
=-40
V
,
I
E
= 0
Collector cut-off current
Collector cut-off current
Emitter cut-off current
-0.1
-0.1
I
CEO
I
EBO
V
CE
=-20
V
,
I
B
=0
-0.1
400
V
EB
=-3
V
,
I
C
= 0
h
FE1
V
CE
=-1
V
,
I
C
=-50mA
V
CE
=-1
V
,
I
C
=-500mA
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
120
50
DC current gain
h
FE2
V
CE(sat)
V
BE(sat)
Collector-emitter saturation voltage
Base-emitter saturation voltage
-0.6
-1.2
V
V
V
CE
=-6
V
,
I
C
=-20mA,
f=30MHz
MH
Z
f
T
150
Transition frequency
CLASSIFICATION
O
F
h
FE
(
1
)
L
H
J
RANK
300-400
120-200
200-350
RANGE
Page 1 of 4
2020.10
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
S8550
TYPICAL CHARACTERICS
Fig.1
I
C
—— V
CE
Fig.2
P
C
—— T
a
-100
-80
400
COMMON
EMITTER
=25
℃
T
a
-400uA
-360uA
-320uA
-280uA
-240uA
-60
200
-200uA
-40
-20
-0
-160uA
-120uA
-80uA
I
B
=-40uA
0
25
50
75
100
125
150
-4
-8
-12
AMBIENT TEMPERATURE
T
a (
℃
)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Fig.4
V
CEsat
—— I
C
Fig.3
C
ob
/ C
ib
—— V
CB
/
V
EB
-1000
100
10
1
f=1MHz
=0/
Ic
=0
Ta=25
℃
I
E
-100
-10
Τ
α
=25
℃
-1
β
=10
-0.1
0.1
-0.1
-1
-10
-20
-1
-10
-100
-1000
REVERSE BIAS VOLTAGE V (V)
I
C
, COLLECTOR CURRENT (mA)
Fig.5 h
FE
–Ic
Fig.6
V
BEsat
—— I
C
400
300
200
100
10
-1.6
-1.2
Τ
α
=25
℃
-0.8
-0.4
COMMON EMITTER
CE
=-1V
β
=10
V
-0
-0.1
-10
-100
-500
-1
-10
-100
-500 -600
-1
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig.8
f
T
—— I
C
Fig.7
I
C
—— V
BE
-1000
-100
-10
300
V
CE
=-6V
V
CE
=-5V
Ta=25
℃
200
100
-1
-0.1
0
-0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0
-50
-100
-150
BASE-EMMITER VOLTAGE V
BE
(V)
I
C
, COLLECTOR CURRENT (mA)
Page 2 of 4
2020.10
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
S8550
SOT-23 Package
Outline Dimensions
e
∠
ALL ROUND
D
A
M
e
e
E
C
a
L
1
L
H
E
SOT-23 mechanical
data
A
C
D
E
H
E
e
M
L
L
1
a
0.0
0.15
0.0
6
∠
UNIT
max
1.1 0.15 1.4
3.0 2.6 0.5
1.95
0.55 0.36
(ref) (ref)
mm
mil
min
0.9 0.08
1.2
2.8 2.2 0.3 1.7
12
°
max
43
6
3
55 118
102 20
77
47 110 87
12 67
22
14
(ref) (ref)
min
35
Marking
The recommended mounting pad size
Type number
Marking code
2TY
0.8
(0.031)
S8550
0.9
(0.039)
0.95
(0.037)
0.95
(0.037)
2.0
(0.079)
mm
(inches)
Unit
：
Page
3
of 4
2020.10
201012
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
S8550
SOT-23 Packing
1.The method of packaging and dimension are shown as below figure. (Dimension in mm)
7
in
X8 mm
Cover Tape
3,000 pcs per reel
Carrier Tape
SOT-23
8 reels per box
24,000 pcs per box
5 boxes per carton
120,000 pcs per carton
1
0
5
m
m
SOT-23 Embossed Carrier
T
a
pe
SOT-23
T
a
pe Leader and Trailer
Page 4 of 4
2020.10
