Shandong-Jingdao-Microelectronics-S9015-L
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山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
S9015
General Purpose Transistor
PNP Silicon
3
SOT-23
COLLECTOOR
3
1
DEVICE MARKING
BASE
S9015 = M6
1
2
EMITTER
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V
CEO
V
CBO
-45
-50
Vdc
V
EBO
I
C
-5.0
-100
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
200
mW
T
o
tal Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
P
D
Junction and Storage
T
e
mperature
°C
T
J
,T
stg
–
55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage(3)
V
(BR)CEO
-45
–
Vdc
(
I
C
= -0.1 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
V
(BR)CBO
V
(BR)EBO
-50
–
–
Vdc
Vdc
(
I
C
= -100 µAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
-5.0
(
I
E
= -100 µAdc, I
C
= 0)
Collector cut-off current
I
CBO
I
EBO
–
–
-0.1
-0.1
uAdc
uAdc
(
V
CB
=-50 Vdc, I
E
= 0 )
Emitter cut-off current
(
V
EB
= -5Vdc, I
C
= 0 )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse
T
e
st: Pulse Width <300 µs, Duty Cycle <2.0%.
Page 1 of 4
2021.08
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
S9015
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
ON CHARACTERISTICS (3)
Characteristic
Symbol
Min
Max
1000
-0.3
Unit
—
DC Current Gain
h
FE
(
I
C
=-1.0 mAdc, V
CE
=-5 Vdc)
200
—
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
V
dc
V
dc
(
I
C
= -100 mAdc, I
B
= -10 mAdc)(3)
Base–Emitter Saturation Voltage(3)
(
I
C
= -100 mAdc, I
B
= -10mAdc)
—
-1.0
–
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
150
MHz
(
I
C
= -10mAdc, V
CE
= -5.0Vdc, f =30MHz)
CLASSIFICATION OF h
FE
Rank
L
H
Range
200-450
400-1000
Page 2 of 4
2021.08
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
S9015
TYPICAL CHARACTERICS
Fig.1 Power
Derating Curve
Fig.2 Static
characteristics
-12
-10
-8
250
200
Common Emitter
T
a
=25
℃
150
100
50
I
B
=-20uA
-6
I
B
=-14uA
I
B
=-8uA
-4
-2
I
B
=-2uA
0.0
0
25
50
75
100
125
150
175
0.0
-2.0
-4.0
-6.0
-8.0
-10
Ambient
T
e
mperature (
°
C)
Collector-Emitter Voltage V
CE
(V)
Fig.4 Ic–V
BE
Fig.3 h
FE
–Ic
1000
-100
-10
-1
100
10
1
V
CE
=-5.0V
T
a
=25
℃
V
CE
=-5.0V
-0.1
-0.1
-1.0
-10
-100
-1000
0
-0.2
-0.4
-0.6
-0.8
-1.0
I
C
, COLLECTOR CURRENT (mA)
Base-Emitter Voltages
V
BE
(V)
Fig.5 V
BEsat
–Ic
Fig.6 V
CEsat
–Ic
-2.0
-1.0
-1.0
-0.1
TA=25
℃
β
=10
TA=25
℃
β
=10
-0.1
-0.01
-0.1
-1.0
-10
-100
-1000
-0.1
-1.0
-10
-100
-1000
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig.8 C
ob
/C
ib
–
V
CB
/V
EB
Fig.7 f
t
–Ic
100
1000
Cib
10
100
10
f=1MHz
T
A
=25
℃
V
CE
=-5.0V
I
E
=0/I
C
=0
Cob
T
a
=25
℃
1.0
-0.1
-1.0
-10
-100
-0.1
-10
Reverse Voltage
V
R
(V)
-100
I
C
, COLLECTOR CURRENT (mA)
Page 3 of 4
2021.08
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
S9015
SOT-23 Package
Outline Dimensions
e
∠
ALL ROUND
D
A
M
e
e
E
C
a
L
1
L
H
E
SOT-23 mechanical
data
A
C
D
E
H
E
e
M
L
L
1
a
0.15
0.0
6
∠
UNIT
max
1.1
0.20 1.4
3.0 2.6 0.6
1.95
0.55 0.36
(ref) (ref)
mm
mil
min
0.9 0.08
1.2
2.8
2.2
0.35 1.7
max
12
°
43
7.9 55 118
102 24
77
min
35
3.1 47 110 87
13 67
22
14
(ref) (ref)
0.0
Marking
The recommended mounting pad size
Type number
Marking code
M6
0.8
(0.031)
S9015
0.9
(0.039)
0.95
(0.037)
0.95
(0.037)
2.0
(0.079)
mm
(inches)
Unit
：
Page 4 of 4
2021.08
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