Shandong-Jingdao-Microelectronics-SS8050-H
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山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
SS8050
SOT-23
SS
8050
NPN TRANSISTOR
3
FEATURES
•
Complimentary to SS8550
1
MAXIMUM RATINGS (
T
a
=25
℃
unless otherwise noted)
2
Symbol
Parameter
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Value
40
25
5
1.5
Unit
V
V
V
A
1.BASE
V
CBO
V
CEO
V
EBO
I
C
2.EMITTER
3.COLLECTOR
Collector Current — Continuous
mW
Collector Power Dissipation
P
C
300
Thermal Resistance From Junction
To
A
mbient
℃/
W
R
thJA
417
Operation Junction and Storage
T
e
mperature Range
℃
T
J
,T
stg
-55~+150
CLASSIFICATION OF h
FE1
Rank
L
H
J
300-400
Range
120-200
200-350
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Test conditions
Typ
Unit
Max
Min
Parameter
V
(BR)CBO
I
C
= 100uA, I
E
= 0
I
C
= 0.1 mA, I
B
= 0
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
40
25
V
(BR)CEO
V
(BR)EBO
I
CBO
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
I
E
= 100uA, I
C
= 0
V
CB
= 40
V
,
I
E
= 0
V
CE
= 20
V
,
I
E
=0
V
5
uA
uA
uA
0.1
I
CEO
I
EBO
0.1
0.1
400
V
EB
= 5
V
,
I
C
=0
120
40
h
FE1
h
FE2
V
CE
= 1
V
,
I
C
= 100mA
V
CE
= 1
V
,
I
C
= 800mA
DC current gain
V
CE(sat)
V
BE(sat)
f
T
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.5
1.2
I
C
= 800mA, I
B
= 80mA
I
C
= 800mA,I
B
=80mA
V
CE
= 10
V
,
I
C
= 50mA,
f=30MHz
100
Transition frequency
MH
Z
Page 1 of 3
2021.08
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
SS8050
TYPICAL CHARACTERICS
Fig.2
P
C
—— T
a
Fig.1 Static
characteristics
140
120
400
I
B
=500uA
=450uA
COMMON
EMITTER
I
B
T
a
=25
℃
I
B
=400uA
=350uA
=300uA
=250uA
I
B
I
B
80
200
I
B
I
B
=200uA
40
0
I
B
=150uA
=100uA
I
B
I
B
=50uA
0
25
50
75
100
125
150
0.5
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
1.0
1.5
2.0
2.5
3.0
AMBIENT TEMPERATURE
T
a (
℃
)
Fig.4
V
CEsat
—— I
C
Fig.3
C
ob
/ C
ib
—— V
CB
/
V
EB
1000
100
10
1
f=1MHz
=0/
Ic
=0
Ta=25
℃
C
ib
I
E
100
10
Τ
=25
℃
α
C
ob
1
β
=10
0.1
0.1
1
10
20
1
10
100
1000 1500
REVERSE BIAS VOLTAGE V (V)
I
C
, COLLECTOR CURRENT (mA)
Fig.5 h
FE
–Ic
Fig.6
V
BEsat
—— I
C
1000
100
10
1.6
1.2
Τ
α
=100
℃
Τ
=25
℃
α
Τ
α
=25
℃
0.8
0.4
COMMON EMITTER
V
CE
=1V
β
=10
0
0.1
10
100
1000 1000
1
10
100
1000 1500
1
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig.8
f
T
——I
C
Fig.7
I
C
—— V
BE
1500
1000
1000
100
10
100
10
1
COMMON EMITTER
V
CE
=10V T
a
=25
℃
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
BASE-EMMITER VOLTAGE V
BE
(V)
Page 2 of 3
2021.08
山 东 晶 导 微 电 子 股 份 有 限 公 司
Jingdao Microelectronics co.LTD
SS8050
SOT-23 Package
Outline Dimensions
e
∠
ALL ROUND
D
A
M
e
e
E
C
a
L
1
L
H
E
SOT-23 mechanical
data
A
C
D
E
H
E
e
M
L
L
1
a
0.15
0.0
6
∠
UNIT
max
1.1
0.20 1.4
3.0 2.6 0.6
1.95
0.55 0.36
(ref) (ref)
mm
mil
min
0.9 0.08
1.2
2.8
2.2
0.35 1.7
max
12
°
43
7.9 55 118
102 24
77
min
35
3.1 47 110 87
13 67
22
14
(ref) (ref)
0.0
Marking
The recommended mounting pad size
Type number
Marking code
Y1
0.8
(0.031)
SS8050
0.9
(0.039)
0.95
(0.037)
0.95
(0.037)
2.0
(0.079)
mm
(inches)
Unit
：
Page 3 of 3
2021.08
210831
