Shanghai-Prisemi-Elec-PNMT6N1
| Part # | Shanghai-Prisemi-Elec-PNMT6N1 |
Download  | Shanghai-Prisemi-Elec-PNMT6N1 |
PNMT6N1
Transistor with N-MOSFET
Feature
Top View
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.
PNMT6N1 is composed by a transistor and a MOSFET
1
6
（
E
）
（
C
）
Transistor:
2
3
（
B
）
（
D
）
5
4
（
G
）
（
S
）
Very low collector to emitter saturation voltage
DC current gain >100
3A continuous collector current
PNP epitaxial planar silicon transistor
Bottom View
MOSFET:
1
6
（
E
）
（
B
）
（
D
）
（
C
）
（
C
）
（
D
）
MOSFET Product Summary
2
3
5
4
（
G
）
（
S
）
V
DS
(V)
40
R
DS(on)
(Ω)
V
GS(th)
(V)
0.5 to 1.5
I
D
(A)
0.18
4.5@ V
GS
=4V
Transistor
Electrical characteristics per line@25
℃
( unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter -Base Breakdown Voltage
Collector Current
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
C
Conditions
I
C
=-10mA
Value
-30
-40
-5
Units
V
V
I
C
=-0.1mA
I
E
=-0.1mA
V
-3
A
Collector Peak Current
I
CM
-6
A
Base Current
I
B
-0.2
-0.5
1.2
A
Base Peak Current
I
BM
A
Total Dissipation @25°C
P
tot
W
Storage Temperature
T
stg
-65~150
150
°C
°C
°C/ W
Max. Operating Junction Temperature
Junction-to-Ambient Thermal Resistance
(1)
T
j
R
θJA
104
Note 1: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Rev.06.7
1
PNMT6N1
Transistor with N-MOSFET
Absolute maximum rating@25
℃
Parameter
Symbol
Conditions
I
C
=-1mA,V
CE
=-5.0V
I
C
=-1A,V
CE
=-5.0V
I
C
=-0.1A,I
B
=-1mA
I
C
=-0.5A,I
B
=-50mA
I
C
=-1A,I
B
=-100mA
I
C
=-1A,I
B
=-0.05mA
V
CB
=-40V
Min.
Typ. Max. Units
150
DC Current Gain
h
FE
–
100
–
–
–
–
-0.14
Collector-Emitter Saturation Voltage
V
CE(sat)
-0.17
-0.31
-1.1
-0.1
-20
V
Base-Emitter Saturation Voltage
Collector Cut-off Current (I
E
=0)
Emitter Cut-off Current(I
C
=0)
V
BE(sat)
V
I
CBO
μA
μA
V
CB
=-30V T
C
=125°C
V
EB
=-5V
I
EBO
-0.1
MOSFET
Electrical characteristics per line@25
℃
( unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max. Units
OFF CHARACTERISTICS
I
D
=10μA,V
GS
=0V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
V
DSS
I
DSS
I
GSS
40
–
–
–
–
–
–
1
V
μA
μA
V
V
DS
=35V,V
GS
=0V
–
–
V
DS
=0V,V
GS
=
±15V
±1
1.5
4
V
GS(th)
V
DS
=V
GS
, I
D
=250μA
V
GS
=4.5V, I
D
=0.2A
0.5
–
Static Drain-Source On-Resistance
R
DS(ON)
Ω
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
C
ISS
–
–
–
–
–
–
40
20
5
pF
pF
pF
V
GS
=0V, V
DS
=25V,
C
DSS
C
RSS
f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
V
DS
=30V, V
GS
=10V,
R
G
=25
Ω,
R
L
=150
Ω
I
D
=0.2A
Turn-On Delay Time
Turn-Off Delay Time
t
d(on)
t
d(off)
–
–
–
–
20
20
ns
ns
Rev.06.7
2
Transistor with N-MOSFET
PNMT6N1
Absolute maximum rating@25
℃
Rating
Drain-Source Voltage
Symbol
Value
40
Units
V
DS
V
GS
I
D
V
V
Gate-Source Voltage
±20
Continuous
Drain Current
Pulsed
0.18
0.36
150
A
I
D
A
Total Power Dissipation
T
A
=25
℃
P
D
mW
Typical Characteristics
1400
h
FE
COMMON
EMITTER
Ta=25°C
5 mA
4.5mA
4mA
1200
1000
800
600
400
200
0
3.5 mA
3mA
2.5mA
2mA
100
1.5mA
1mA
10
IB=0.5mA
0.01
0.1
1
10
0
4
8
12
16
20
22
V
CE
=-1V
Fig1.Collector-emitter voltage V
CE
(V)
Fig2.DC Current Gain
V
CE(SAT)
V
BE(SAT)
0.9
0.8
0.7
0.1
0.6
0.01
0.01
0.1
1
10
0.01
0.1
1
10
I
C
(A)
hFE=100
I
C
(A)
hFE=100
Fig 3.Collector-Emitter Saturation Voltage
Fig4. Base-Emitter Saturation Voltage
Rev.06.7
3
Transistor with N-MOSFET
PNMT6N1
T(ns)
T(ns)
V
CC
=20V
V
CC
=20V
500
500
400
300
200
h
FE
=50
Tp=40us
h
FE
=50
td
Tp=40us
400
ts
300
tr
200
tf
100
0
100
0
0
0
0.5
1.0
1.5
h
FE
=100
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
3.0
I
C
(A)
h
FE
=100
I
C
(A)
Fig 5.Switching Times Resistive Load
Fig6. Switching Times Resistive Load
1.0
1.0
T=25°C
T=55°C
V
GS
=4.2V
0.8
0.6
0.8
0.6
V
GS
=2.5V
V
GS
=1.5V
0.4
0.4
T=125°C
0.2
0
0.2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
– Gate to Source Voltage (V)
V
DS
– Drain Source Voltage (V)
Fig 7. Output Characteristics
Fig 8. Transfer Characteristics
80
6
5
V
GS
=3.0V
C
iss
60
4
3
V
GS
=7.0V
40
20
2
V
GS
=11.5V
C
Oss
1
C
Rss
0
0.0
0
0
0.2
0.4
0.6
0.8
1.0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain Source Voltage (V)
Fig 9. On-Resistance vs. Drain Current
Fig 10. Capacitance
Rev.06.7
4
Transistor with N-MOSFET
PNMT6N1
100
80
60
40
20
0
0
25
50
75
100
125
150
Ambient
T
emperature – T
A
(°C)
Fig11. Power Derating Curve
Rev.06.7
5
Transistor with N-MOSFET
PNMT6N1
Product dimension DFN-6L(2*2)
A
C
Millimeters
Inches
MAX
Dim
（
6
）
H
MIN
MAX
MIN
F
E
A
B
C
D
E
F
G
H
J
1.924
1.924
0.250
2.076
2.076
0.350
0.076
0.076
0.010
0.082
0.082
0.014
B
G
0.650
（
typ.
）
0.200 MIN.
0.520
0.026
（
typ.
）
（
1
）
0.008 MIN.
D
0.720
1.100
0.326
0.650
0.020
0.028
0.043
0.013
0.027
0.900
0.174
0.550
0.035
0.007
0.021
L
K
J
K
L
0.206 REF
0.203 REF
0.206 REF
0.203 REF
p
Millimeters
r
Dim
MIN
MAX
p
r
0.60
0.40
1.05
0.42
0.67
0.06
0.1
0.70
0.50
1.15
0.52
0.77
0.16
0.2
R
t
s
R
s
t
f
g
h
f
g
h
j
j
0.35
0.1
0.45
0.2
R
If there is enough place in PCB. It can be
mounted with copper along the dotted line in
order to optimize thermal design.
Rev.06.7
6
Transistor with N-MOSFET
PNMT6N1
PTMS
7258
Ordering information
Device
Package
DFN-6L (2*2)
Reel
Shipping
3000 /
T
ape & Reel
PNMT6N1
7″
Load with information
USER DIRECTION OF FEED
2.00 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
Φ1.50 ± 0.10
4.00 ± 0.10
3.50 ± 0.10
8.00 ± 0.30
Unit
：
mm
Rev.06.7
7
Transistor with N-MOSFET
PNMT6N1
IMPORTANT NOTICE
are registered trademarks of
Prisemi Electronics Co., Ltd (
Prisemi
)
,Prisemi
and
reserves the right to make changes without further notice to any products herein. Prisemi makes
no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Prisemi
assume any liability arising out of the application or use of any
product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. “Typical” parameters which may be provided in
Prisemi data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. Prisemi does not
convey any license under its patent rights nor the rights of others. The products listed in this
document are designed to be used with ordinary electronic equipment or devices, Should you
intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical
instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), please be sure to consult with our sales representative in advance.
For additional information, please contact your local Sales Representative.
©Copyright 2009, Prisemi Electronics
is a registered trademark of Prisemi Electronics
.
All rights are reserved.
Rev.06.7
8
