Shanghai-Siproin-Microelectronics-ULN2803

ULN2803 series High-voltage  

High

-current Darlington Transistor Arrays  

Features  







Relay-Driver Applications  



500-mA-Rated Collector Current(single  

High-Voltage Outputs:50V  

Output Clamp Diodes  

output)  



Inputs Compatible With Various Types of  

Logic  

General Description  

The ULN2803 is high-voltage high-current  

Darlington transistor arrays each containing  

seven open collector common emitter pairs.  

Each pair is rated at 500mA. Suppression  

diodes are included for inductive load driving,  

the inputs and outputs are pinned in opposition  

to simplify board layout.  

These devices are capable of driving a wide  

range of loads including solenoids, relays, DC  

motors, LED displays, filament lamps, thermal  

print-heads and high-power buffers.  

The ULN2803 is available in both a small  

outline 18-pin package

 

(SOP18).  

Pin Assignments  

Connection Diagram  

1

Ver1.1  

Shanghai Siproin Microelectronics Co.  

ULN2803 series High-voltage  

High

-current Darlington Transistor Arrays  

Pin Descriptions  

Pin Number  

Pin Name  

1B  

Function  

1

Input pair1  

2

2B  

Input pair2  

3

3B  

Input pair3  

4

4B  

Input pair4  

5

5B  

Input pair5  

6

6B  

Input pair6  

7

7B  

Input pair7  

8

8B  

Input pair8  

9

E

Common Emitter (ground)  

Common Clamp Diodes  

Output pair8  

Output pair7  

Output pair6  

Output pair5  

Out

put pair4  

O

utput pair3  

Out

put pair2  

Output pair1  

10  

11  

12  

13  

14  

15  

16  

17  

18  

COM  

8C  

7C  

6C  

5C  

4C  

3C  

2C  

1C  

Functional Block Diagram  

Note: All resistor values shown are nominal.  

The collentor-emitter diode is a parasitic structure and should not be used to conduct current.If the collector(s) go  

below ground an external Schoottky diode should be added to clamp negative undershoots.  

2

Ver1.1  

Shanghai Siproin Microelectronics Co.  

ULN2803 series High-voltage  

High

-current Darlington Transistor Arrays  

(1)  

Absolute Maximum Ratings  

At 25°C free-air temperature (unless otherwise noted)  

Symbol  

Parameter  

Min  

Max  

Unit  

Collector to emitter voltage  

50  

V

V

CC  

V

R  

V

I  

Clamp diode reverse voltage(2)  

Input voltage(2)  

50  

30  

V

V

I

CP  

Peak collector current  

See typical characteristics  

ULN2803  

500  

mA  

Output clamp current  

T

o

tal emitter-terminal current  

Operating free-air temperature range  

500  

–2.5  

70  

mA  

A

I

OK  

I

TE  

T

A  

θ

JA  

θ

JC  

–20  

°C  

The

r

m

al Resistance Junction-to-Ambient(3)  

63  

°C/W  

The

r

m

al Resistance Junction-to-Case(4)  

Operating virtual junction temperature  

Storage temperature range  

12  

150  

150  

°C  

°C  

T

J

T

S

T

G  

–

6

5  

(1) Stresses

 

beyond those listed under “absolute maximum ratings” may caus

e

permanent

da

mage to the device.  

These are stress ratings only, and functional operation of the device at

t

hese o

r

any o

t

h

er conditions beyond  

those indicated under “recommended operating conditions”

is not im

plied.

E

xposure to  

absolute-maximum-rated conditions for extended period

s may affect de

vice reliability.  

(2) All

 

voltage values are with respect to the emitter/substrat

e terminal E, u

nless otherwise noted.  

(3)

Maximum power dissipation is a function of TJ

(max), θ

JA, and

TA.

T

h

e maximum allowable power dissipation  

at any allowable ambient temperature is PD

= (TJ(max

)

–

TA)/θJA. Operating at the absolute maximum TJ of  

150°C can affect reliability.  

(4) Maximum

 

power di

ssipation is a

function of

TJ(max)

,

θJC, and TA. The maximum allowable power dissipation  

at any allowable ambient temperat

ure is

PD = (TJ(max) –

TA)/θJC. Operating at the absolute maximum TJ of  

150°C can affect reliability.  

Recommended Operating Conditions  

Symbol  

Parameter  

Min  

Max  

Unit  

VCC  

Collector to Emitter voltage  

–

50  

V

℃

TA  

Operating Ambient

T

e

mperature  

40  

+105  

3

Ver1.1  

Shanghai Siproin Microelectronics Co.  

ULN2803 series High-voltage  

High

-current Darlington Transistor Arrays  

Electrical Characteristics(TA=+25

℃

, unless otherwise specified)  

ULN2803  

Test  

Figure  

Parameter  

Test Conditions  

Unit  

MIN  

—  

TYP  

MAX  

2.4  

I

I

= 200 mA  

= 250 mA  

—  

—  

C

C

V

2.7  

3

—  

On-state input voltage  

Figure 6  

Figure 5  

V

V

= 2 V  

I(on)  

CE  

—  

—  

I

= 300 mA  

C

0.9  

1

1.1  

1.3  

1.6  

50  

I

= 250 μA,  

I

I

I

= 100 mA  

= 200 mA  

= 350 mA  

—  

—  

—  

—  

I

C

C

C

V

Collector-emitter  

saturation voltage  

V

CE(sat)  

I

= 350 μA,  

I

1.2  

—  

I

= 500 μA,  

I

Figure 1  

Figure 2  

V

= 50

V

,  

= 50

V

,  

I =

 

0  

I

CE  

CE  

I

Collector cutoff current  

μA  

CEX  

V

100  

2

I =

 

0  

I

—  

—  

T

A

=

+

105°C  

= 350 mA  

= 50

V

,  

V

Clamp forward voltage  

Off-state input current  

Figure 8  

Figure 3  

1.7  

65  

V

F

I

—  

F

I

50  

μA  

V

I

= 500 μA  

—  

1.35  

—  

CE  

C

I

(

off)  

0.93  

—  

—  

—  

V =

 

3.85 V  

I

Input current  

Figure 4  

Figure 7  

mA  

I

I

V =

 

5 V  

I

—  

—  

—  

—  

V =

 

12 V  

I

—  

—  

—  

50  

Clamp reverse current  

Input capacitance  

μA  

I

V =

 

5

0 V  

R

R

100  

25  

T

A

=

70°C  

—  

15  

pF  

C

i

V =

 

0, f

 

= 1 MHz  

I

Switching Characteristics (

T =

 

+

25°C, unle

ss otherwise specified)  

A

ULN2803  

Parameter  

Test C

onditions  

UNIT  

MIN  

TYP  

0.25  

0.25  

MAX  

t

Propagation dela

y

time,  

low- to high-lev

e

l o

u

tput  

Propagation

d

elay

tim

e,  

high- to low-lev

el ou

tput  

See Figure 9  

1

1

μs  

μs  

PLH  

t

See Figure 9  

PHL  

V

V

S

= 50 V, I

 

= 300 mA,  

High-level output voltage  

after switching  

O

VS–20  

mV  

OH  

See Figure 9  

4

Ver1.1  

Shanghai Siproin Microelectronics Co.  

ULN2803 series High-voltage  

High

-current Darlington Transistor Arrays  

Parameter Measurement Information  

5

Ver1.1  

Shanghai Siproin Microelectronics Co.  

ULN2803 series High-voltage  

High

-current Darlington Transistor Arrays  

Notes: 8.

 

The pulse generator has th

e following

c

h

aract

er

istics:  

Pulse Width=12.5Hz, outp

ut imp

edance 50Ω, tr≤5ns, tr≤10ns.  

9. C

L

includes prove and jig

c

apacita

n

ce.  

10. V

IH

=3V  

6

Ver1.1  

Shanghai Siproin Microelectronics Co.  

ULN2803 series High-voltage  

High

-current Darlington Transistor Arrays  

SOP18 Outline Dimensions  

7

Ver1.1  

Shanghai Siproin Microelectronics Co.