Shenzhen-Fuman-Elec-2060A-N-MOS
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深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
2060A
（文件编号：
S&CIC1744
）
N-Channel Trench Power MOSFET
General Description
The 2060A uses advanced trench technology to
provide excellent
RDS(ON), low gate charge and
operation with
gate voltages
as low
as 2.5V. This device
is suitable
for use as a wide variety of applications.
Features
TO-252(DPAK)
Top View
●
V
DS
=20V
；
I
D
=60A
；
R
DS(ON)
<6.5mΩ @ V
GS
=4.5V
R
DS(ON)
<8.6mΩ @ V
GS
=2.5V
Schematic Diagram
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Application
●
●
●
Battery Protection
Load switch
Power management
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2060K
2060K
TO-252
325mm
16mm
2500
Table 1.
Absolute Maximum Ratings (TA=25
℃
)
Symbol
V
DS
Parameter
Value
20
Unit
Drain-Source Voltage (
V
GS=
0V
）
V
V
±
12
V
GS
Gate-Source Voltage (
V
DS=
0V)
(Not
e
1
)
60
42
A
Drain Current-Continuous(T
c
=25
℃
)
I
D
Drain Current-Continuous(T
c
=100
℃
)
A
(Note 2)
202
A
I
DM (pluse)
Drain Current-Continuous@ Current-Pulsed
Maximum Power Dissipation(T
c
=25
℃
)
62
W
W
P
D
Maximum Power Dissipation(T
c
=100
℃
)
38
(Note 3)
216
E
AS
mJ
Avalanche energy
℃
Operating Junction and Storage Temperature Range
-55 To 155
T
J
,T
STG
Table 2.
Thermal Characteristic
Symbol
Parameter
Typ
Max
Unit
℃
/W
R
JC
Thermal Resistance,Junction-to-Case
–
1.95
Version 1.0
第
1
页 共
6
页
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
2060A
（文件编号：
S&CIC1744
）
N-Channel Trench Power MOSFET
Table 3.
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
V
GS
=0V I
D
=250μA
V
DS
=20V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
20
V
μA
nA
V
1
I
GSS
±100
1.0
V
GS(th)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
DS
=5V,I
D
=15A
0.45
0.7
35
Forward Transconductance
S
V
GS
=4.5V, I
D
=20A(T
c
=25
℃
)
V
GS
=4.5V, I
D
=20A (T
c
=125
℃
)
4.9
6.5
6.2
6.5
11
mΩ
mΩ
mΩ
R
DS(ON)
Drain-Source On-State Resistance
V
GS
=2.5V, I
D
=15A
8.6
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
2950
389
305
1.3
pF
pF
pF
Ω
V
DS
=15V,V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V,f=1.0MHz
Switching Times
t
d(on)
Turn-on Delay Time
t
r
t
d(off)
t
f
19
55
78
29
36
5
nS
nS
nS
nS
nC
nC
nC
V
GS
=4.5V, V
DS
=15V,
R
L
=0.75
,R
GEN
=3
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
GS
=4.5V, V
DS
=10V, I
D
=12A
14
Source-Drain Diode Characteristics
I
SD
V
SD
t
rr
Source-Drain Current(Body Diode)
60
A
Forward on Voltage
V
GS
=0V,I
S
=20A
1.2
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=100A/
s
I
F
=20A, dI/dt=100A/
s
26
12
ns
nC
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
,VDD=30V,V =4.5V,
RG=25Ω,
J
G
Version 1.0
第
2
页 共
6
页
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
2060A
（文件编号：
S&CIC1744
）
N-Channel Trench Power MOSFET
Test Circuit
EAS Test Circuits:
Gate Charge Test Circuit:
Switch Time Test Circuit
：
Version 1.0
第
3
页 共
6
页
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
2060A
（文件编号：
S&CIC1744
）
N-Channel Trench Power MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
(
Curves)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
VDS Drain-to-Source Voltage(V)
VGS Gate-to-Source Voltage(V)
Figure 4. Drain Current
Figure 3. Max BV
DSS
vs Junction Temperature
T
J
-Junction Temperature(
℃
)
T
J
-Junction Temperature(
℃
)
Figure 5. V
GS(th)
vs Junction Temperature
Figure 6. R
DS(ON)
vs Junction Temperature
TJ-Junction Temperature(
℃
)
TJ-Junction Temperature(
℃
)
Version 1.0
第
4
页 共
6
页
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
2060A
（文件编号：
S&CIC1744
）
N-Channel Trench Power MOSFET
Figure 7. Gate Charge Waveforms
Figure 8. Capacitance
Qg(nC)
VDS Drain-to-Source
Voltage(V)
Figure 9. Body-Diode Characteristics
Figure 10. Maximum Safe Operating Area
Vsd (V)
VDS Drain-to-Source Voltage(V)
Figure 11. Normalized Maximum Transient Thermal Impedance
Version 1.0
第
5
页 共
6
页
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
2060A
（文件编号：
S&CIC1744
）
N-Channel Trench Power MOSFET
TO-252 Package Information
Version 1.0
第
6
页 共
6
页
