Shenzhen-Fuman-Elec-2301-C
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深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
2301/C
(
文件编号：
S&CIC1845)
P-Channel Trench Power MOSFET
Description
P-channel MOSFET
Features
Application
V
DS
=-17V, I
D
=-2.0A
PWM Applications
Load Switch
R
DS(ON)
<115mΩ @ V
GS
= -4.5V
R
DS(ON)
<165mΩ @ V
GS
= -2.5V
Power Management
High Power and Current Handing Capability
Lead Free Product is Acquired
Surface Mount Package
Package
SOT-23
Schematic Diagram
Absolute Maximum Ratings
(T
C
=25
℃
unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
-17
±12
V
V
Gate-Source Voltage
T
C
= 25
℃
T
C
= 100
℃
T
A
= 25
℃
-2.0
I
D
Continuous Drain Current
Power Dissipation
A
-1.4
P
D
R
θJA
0.65
W
℃
/W
Thermal Resistance, Junction toAmbient
Operating and Storage
T
emperature Range
175
℃
T
J
, T
STG
-55 to +150
第
1
页 共
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页
Version 1.0
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
2301/C
(
文件编号：
S&CIC1845)
P-Channel Trench Power MOSFET
Electrical Characteristics
(T
C
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V,I
D
= -250μA
V
DS
= -15V, V
GS
= 0
V
,
V
DS
=0
V
,
V
GS
= ±12V
-12
-17
–
V
–
–
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250μA
V
GS
=-4.5V, I
D
=-1A
V
GS
=-2.5V, I
D
=-0.5A
V
DS
=-5
V
,
I
D
= -1.5A
-0.4
-0.6
95
120
–
-1.0
115
165
–
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
g
FS
mΩ
S
note2
Forwar
d
T
ransconductance
4
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
332
69
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
Output Capacitance
V
DS
= -10
V
,
V
GS
=
Reverse Transfe
r
C
apacitance
T
o
tal Gate Charge
42
3.0
Q
gs
Q
gd
Gate-Source Charge
0.58
0.76
V
DS
= -10
V
,
I
D
= -2.5A,
Gate-Drain(“Miller”) Charge
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
14
–
–
–
–
ns
ns
ns
ns
5.6
V
DD
= -10
V
,
R
L
=5Ω,
R
GEN
=3Ω,V
GS
=-4.5V,
21.5
7.9
Drain-Source Diode Characteristics and Maximu
m
R
atings
Maximum Continuous Drain to Source Diod
e
F
orward
I
S
–
–
–
–
-2.0
-1.3
A
V
Drain to Source Diode Forward
V
SD
V
GS
= 0
V
,
I
S
= -2.0A
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
emperature
2. Pulse
T
est: Pulse Width≤300μs, Duty Cycle≤2%
第
2
页 共
4
页
Version 1.0
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
2301/C
(
文件编号：
S&CIC1845)
P-Channel Trench Power MOSFET
Typical Performance Characteristics
Figure1:Switching
T
est Circuit
Figure2:Switching Waveforms
第
3
页 共
4
页
Version 1.0
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
2301/C
(
文件编号：
S&CIC1845)
P-Channel Trench Power MOSFET
Package Information.
SOT23-3(
小
)
毫米
英寸
符号
最小
最大
最小
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
最大
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
c
D
E
E1
e
0.950 TY
P
.
0.550 REF.
0.037 TY
P
.
0.022 REF.
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0.500
0.012
0.020
0
°
8
°
0
°
8
°
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Version 1.0
