Shenzhen-Fuman-Elec-30H10K
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深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
30H10K
(
文件编号：
S&CIC1689)
N-Channel Trench Power MOSFET
N-C
hannel
Trench Power MOSFET
General Description
The 30H10K uses advanced trench technology to provide
excellent
with gate
R
,
low gate charge and operation
DS(ON)
voltages as low as 5V.
This device is suitable
for use as a
wide variety of applications.
Schematic Diagram
Features
●
VDS
= 30V,ID =100A
30H10K
R
< 4.2mΩ @
DS(ON)
VGS
=10V R
<
DS(ON)
7mΩ @
VGS
=5V
●
●
●
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
Application
●
●
●
PWM applications
Load switch
Power management
TO-252(DPAK) top view
100% UIS TESTED!
100% ΔVds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
30H10K
30H10K
TO-252
325mm
16mm
2500
Table 1.
Absolute Maximum Ratings (T
A
=25
℃
)
Symbol
Parameter
Value
Unit
V
VDS
Drain-Source Voltage (VGS=0V
）
30
20
VGS
Gate-Source Voltage (VDS=0V)
±
V
Drain Current-Continuous(Tc=25
℃
)
100
70
A
I
D
Drain Current-Continuous(Tc=100
℃
)
A
(Note 1)
I
DM (pluse)
400
A
Drain Current-Continuous@ Current-Pulsed
Maximum Power Dissipation(Tc=25
℃
)
88
W
W
mJ
℃
P
D
Maximum Power Dissipation(Tc=100
℃
)
44
(Note 2)
EAS
T ,T
320
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
-55 To 175
Notes 1.Repetitive Rating: Pulse width limited by maximum junction
Notes 2.EAS condition: T
=25
℃
,VDD=20V,V =10V,
temperature
J
G
RG=25
Ω
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1
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6
页
Version 1.0
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
30H10K
(
文件编号：
S&CIC1689)
Table 2.
Thermal Characteristic
N-Channel Trench Power MOSFET
Symbol
Parameter
Typ
–
Max
Unit
℃
/W
R
JC
Thermal Resistance, Junction-to-Case
1.7
Table 3.
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
V
=0V I
=250μA
30
V
μA
nA
V
DSS
GS
D
I
V
=30V,V =0V
GS
1
DSS
DS
I
V
=±20V,V =0V
GS DS
±100
2.5
GSS
V
V
=V
,I =250μA
1
1.5
30
GS(th)
DS GS
D
g
Forward Transconductance
V
=5V,I =15A
S
FS
DS
D
V
=10V, I
=20A
3.6
4.6
4.2
7
mΩ
mΩ
GS
D
R
)
Drain-Source On-State Resistance
DS(ON
V
=5V, I
=15A
D
GS
Dynamic Characteristics
Ciss
Input Capacitance
2600
412
300
3.3
pF
pF
pF
Ω
V
=15V,V
=
GS
DS
0V,
f=1.0MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
oss
C
rss
Rg
Switching Times
V
=0V, V
=0V,f=1.0MHz
DS
GS
Turn-on Delay Time
13
16
40
14
58
7
nS
nS
nS
nS
nC
nC
nC
t
d(on)
VGS=10V,
VDS=15V,
RL=0.75
,RGEN=
3
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
t
d(off)
t
f
Q
g
VGS=10V, VDS=15V, ID=14A
Q
gs
Q
gd
18
Source-Drain Diode Characteristics
I
Source-Drain Current(Body Diode)
100
1.2
A
V
SD
(Note 1)
V
VGS=0V,IS=20A
SD
Forward on Voltage
Notes 1. Repetitive Rating: Pulse width limited by maximum junction
temperature.
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Version 1.0
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
N-Channel Trench Power MOSFET
30H10K
(
文件编号：
S&CIC1689)
Test Circuit
1) E
AS
Tes
t
C
ircuits
2) Gate
Charge Test Circuit:
3)
Switch Time Test Circuit
：
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页 共
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页
Version 1.0
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
N-Channel Trench Power MOSFET
30H10K
(
文件编号：
S&CIC1689)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS(Curves)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
VDS Drain-to-Source Voltage(V)
VGS Gate-to-Source Voltage(V)
Figure 4. Drain Current
Figure 3. Max BV
DSS
vs Junction Temperature
T
J
-Junction Temperature(
℃
)
T
J
-Junction Temperature(
℃
)
Figure 5. V
GS(th)
vs Junction Temperature
Figure 6. R
DS(ON)
vs Junction Temperature
T
J
-Junction Temperature(
℃
)
T
J
-Junction Temperature(
℃
)
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Version 1.0
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
30H10K
(
文件编号：
S&CIC1689)
N-Channel Trench Power MOSFET
Figure 7. Gate Charge Waveforms
Figure 8. Capacitance
Qg(nC)
VDS Drain-to-Source Voltage(V)
Figure 9. Body-Diode Characteristics
Figure 10. Maximum Safe Operating Area
Vsd (V)
VDS Drain-to-Source Voltage(V)
Figure 11. Normalized Maximum Transient Thermal Impedance
Square Wave Pluse Duration(sec)
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5
页 共
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页
Version 1.0
深圳市富满电子集团股份有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
N-Channel Trench Power MOSFET
30H10K
(
文件编号：
S&CIC1689)
TO-252 Package Information
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