Shenzhen-Fuman-Elec-30H12K-H
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富满微电子集团股份有限公司
FINE MADE MICROELECTRONICS GROUP CO., LTD.
30H12K/H
(
文件编号：
S&CIC1869)
N-Channel Trench Power MOSFET
Description
Application
Features
30V,120A
Load Switch
PWM Application
R
DS(ON)
<4.5mΩ @ V
GS
=10V
Power management
R
DS(ON)
<7.5mΩ @ V
GS
=4.5V
Advanced Trench Technology
100% UIS TESTED!
100% ΔVds TESTED!
Provide Excellent R
DS(ON)
and Low Gat
e
C
harge
Lead free product is acquired
TO-252(DPAK) top view
Marking and pin Assignment
Schematic Diagram
Absolute Maximum Ratings
(T
C
=25
℃
unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
30
±20
120
68
V
V
Gate-Source Voltage
T
C
= 25
℃
A
I
D
Continuous Drain Current
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
T
C
= 100
℃
A
I
DM
E
AS
380
256
78
A
mJ
W
P
D
Power Dissipation
T
C
= 25
℃
R
θJC
Thermal Resistance, Junction to Case
1.95
℃
/W
℃
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +175
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页
Version 1.0
富满微电子集团股份有限公司
FINE MADE MICROELECTRONICS GROUP CO., LTD.
30H12K/H
(
文件编号：
S&CIC1869)
N-Channel Trench Power MOSFET
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
=250μA
V
DS
=30V, V
GS
= 0V,
V
DS
=0V, V
GS
= ±20V
30
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=20A
1.0
1.5
2.8
5.5
2.5
5.5
7.5
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
2760
398
360
32
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=15V, V
GS
=0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS
=15V, I
D
=30A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
7.8
Gate-Drain(“Miller”) Charge
11.4
Switching Characteristics
t
d(on)
Turn-on Delay Time
t
r
t
d(off)
t
f
–
–
–
–
36
31
82
38
–
–
–
–
ns
ns
ns
ns
V
DS
=15V,
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
I
D
=30A, R
GEN
=3Ω,
V
GS
=10V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
120
380
1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
= 0V, I
S
=30A
Voltage
–
V
Body Diode Reverse Recovery Time
28
21
ns
nC
I
F
=20A,dI/dt=100A/μs
Body Diode Reverse Recovery
Charge
Qrr
–
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2.
EAS condition: T
J
=25
℃
, V
DD
=20V, V
G
=10V, R
G
=25
Ω
, L=0.5Mh, I
AS
=32A
3.
Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
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Version 1.0
富满微电子集团股份有限公司
FINE MADE MICROELECTRONICS GROUP CO., LTD.
30H12K/H
(
文件编号：
S&CIC1869)
N-Channel Trench Power MOSFET
Typical Performance Characteristics
Figure8. R
DS(ON)
vs Junction Temperature
Figure 7. Maximum Safe Operating Area
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6
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Version 1.0
富满微电子集团股份有限公司
FINE MADE MICROELECTRONICS GROUP CO., LTD.
30H12K/H
(
文件编号：
S&CIC1869)
N-Channel Trench Power MOSFET
T
J
-Junction Temperature(
℃）
VDS Drain-to-Source Voltage(V)
Figure 9. V
GS(th)
vs Junction Temperature
TJ-Junction Temperature(
℃
)
Figure 11. Normalized Maximum Transient Thermal Impedance
Square Wave Pluse Duration(sec)
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6
页
Version 1.0
富满微电子集团股份有限公司
FINE MADE MICROELECTRONICS GROUP CO., LTD.
30H12K/H
(
文件编号：
S&CIC1869)
N-Channel Trench Power MOSFET
Test Circuit
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
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6
页
Version 1.0
富满微电子集团股份有限公司
FINE MADE MICROELECTRONICS GROUP CO., LTD.
30H12K/H
(
文件编号：
S&CIC1869)
N-Channel Trench Power MOSFET
TO-252 Package Information
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Version 1.0
