Shenzhen-Fuman-Elec-3407-H
| Part # | Shenzhen-Fuman-Elec-3407-H |
Download  | Shenzhen-Fuman-Elec-3407-H |
富满微电子集团股份有限公司
FINE MADE MICROELECTRONICS GROUP CO., LTD.
3407/H
(
文件编号：
S&CIC2006)
P-Channel Trench Power MOSFET
Description
General Description
Features
The 3407/H uses advanced trench
technology to provide excellent RDS(ON),
low gate charge This device is suitable for
use in UPS, power switching and
general purpose applications.
• Extremely
Low RDS(on):
• Typ.RDS(on)
=39mΩ @VGS=-10
V, Id=-4 A
• Good
stability and uniformity
• 100%
avalanche tested
• Excellent
package for good heat dissipation
Package
SOT-23
Schematic Diagram
Absolute Maximum Ratings
(T
C
=25
℃
unless otherwise specified)
Symbol
Parameter
Value
-30
Units
Drain-Source Voltage
V
A
A
A
VDS
-4
Drain Current – Continuous (TC= 25°C)
、
ID
Continuous (TC= 100°C)
-2.5*
-16*
Drain Current – Pulsed (Note 1)
Gate-Source Voltage
IDM
VGS
EAS
± 20
11
V
mJ
W
Single Pulsed Avalanche Energy (Note 2)
Power Dissipation (TC = 25°C)
1.36
PD
0.31
W/°C
°C
– Derate above 25°C
Operating and Storage Temperature Range
-55 to +150
T
j ,
T
stg
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Value
Units
R
θ
JC
73
°
C/W
第
1
页 共
4
页
Version 1.0
富满微电子集团股份有限公司
FINE MADE MICROELECTRONICS GROUP CO., LTD.
3407/H
(
文件编号：
S&CIC2006)
P-Channel Trench Power MOSFET
Electrical Characteristics
(T
C
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristic
V
(BR)DSS
Drain-Source Breakdown Voltage
V
GS
=0V,I
D
= -250μA
V
DS
= -30V, V
GS
= 0
V
,
V
DS
=0
V
,
V
GS
=12V
V
DS
=0
V
,
V
GS
=-12V
-30
–
–
–
–
–
V
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
–
–
–
-1
μA
nA
nA
100
-100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250μA
V
GS
=-10V, I
D
=-4.0A
V
GS
=-4.5V, I
D
=-3.0A
VDS =-5V, ID = -4.0A
(Note 2)
-1
–
-1.5
39
-2.0
48
V
R
DS(on)
mΩ
Static Drain-Source on-Resistance
–
54
65
gFS
Forward Transconductance
20
–
–
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
522
88
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -15V, V
GS
=
0
V
,
f = 1.0MHz
Output Capacitance
Reverse Transfe
r
C
apacitance
Total Gate Charge
66
6.1
0.9
1.2
V
DS
= -15
V
,
I
D
= -4.2A,
V
GS
= -10V (Note 3, 4)
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
= -15V, I
D
=1A,
V
GS
=-10V, R
G
=2.5
Ω
(Note 3, 4)
–
–
–
–
12.6
55
17
9
–
–
–
–
ns
ns
ns
ns
Drain-Source Diode Characteristics and MaximumRatings
Maximum Continuous Drain to Source Diod
e
F
orward Current
I
S
–
–
–
–
-4.0
-10
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
Drain to Source Diode Forward Voltage
V
GS
= 0
V
,
I
S
= -4.0A
-1.2
V
V
SD
Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. ISD
≤
40A, di/dt = 100A/us, VDD
≤
BVDSS, Staring Tj =25
℃
3. Pulse
T
est : Pulse width
≤
300us, Duty cycle
≤
2%
4. Essentially independent of operating temperature
第
2
页 共
4
页
Version 1.0
富满微电子集团股份有限公司
FINE MADE MICROELECTRONICS GROUP CO., LTD.
3407/H
(
文件编号：
S&CIC2006)
P-Channel Trench Power MOSFET
第
3
页 共
4
页
Version 1.0
富满微电子集团股份有限公司
FINE MADE MICROELECTRONICS GROUP CO., LTD.
3407/H
(
文件编号：
S&CIC2006)
P-Channel Trench Power MOSFET
Package Information.
SOT23-3(
小
)
毫米
英寸
符号
最小
最大
最小
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
最大
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
c
D
E
E1
e
0.950 TY
P
.
0.550 REF.
0.037 TY
P
.
0.022 REF.
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0.500
0.012
0.020
0
°
8
°
0
°
8
°
第
4
页 共
4
页
Version 1.0
