Shenzhen-Fuman-Elec-45N18

富满微电子集团股份有限公司  

FINE MADE MICROELECTRONICS GROUP CO., LTD.  

N-Channel Trench Power MOSFET  

45N18

(

文件编号：

S&CIC2009)  

Description  

Features  

Application  



45V,20A  



DC/DC Converters  



R

DS(ON)

=15mΩ (Typ.) @ V

GS

= 10V  



Wireless charger  

R

DS(ON)

=18mΩ (Typ.) @ V

GS

= 4.5V  



Synchronous rectification  



High Density Cell Design for Ultra Low R

DS(ON)  



Lead Free and Green Devices Available (RoHS  

Compliant)  



Excellent Package for Good Heat Dissipation  

Package  

45N18  

45N18  

SOP-8  

Marking and pin Assignment  

Absolute Maximum Ratings

(T

C

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Drain-Source Voltage  

Max.  

Units  

V

DSS  

V

GSS  

45  

±20  

20  

V

V

A

A

Gate-Source Voltage  

T

C

= 25

℃  

I

D  

Continuous Drain Current  

T

C

= 100

℃  

12  

Pulsed Drain Current

note1  

Single Pulsed Avalanche Energ

y

note2  

Power Dissipation  

I

DM  

E

AS  

80  

A

16  

20  

mJ  

T

C

= 25

℃  

P

D  

W

℃

/W  

℃

R

θJC  

Thermal Resistance, Junction to Case  

4.6  

T

J

, T

STG  

Operating and Storage Temperature Range  

-55 to +175  

第

1

页 共

7

页  

Version 1.0  

富满微电子集团股份有限公司  

FINE MADE MICROELECTRONICS GROUP CO., LTD.  

N-Channel Trench Power MOSFET  

45N18

(

文件编号：

S&CIC2009)  

Electrical Characteristics

(T

C

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ. Max. Units  

Off Characteristic  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

V

GS

=0V,I

D

=250μA  

V

DS

=45V, V

GS

= 0V,  

V

DS

=0V,V

GS

= ±20V  

45  

–

–

–

–

–

V

1.0  

μA  

nA  

I

GSS  

–

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

V

DS

= V

GS

, I

D

=250μA  

V

GS

=10V, I

D

=15A  

V

GS

=4.5V, I

D

=10A  

1.0  

1.5  

15  

18  

2.5  

20  

24  

V

–

–

Static Drain-Source on-Resistance  

R

DS(on)  

mΩ  

note3  

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

–

–

–

–

–

–

560  

128  

56  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

= 20V, V

GS

=0V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfe

r

C

apacitance  

Total Gate Charge  

13.2  

3.8  

V

DS

=20V, I

D

=20A,  

V

GS

=10V  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

6.2  

Switching Characteristics  

t

d(on)

Turn-on Delay Time  

t

r  

t

d(off)  

t

f  

–

–

–

–

6

12  

14  

5

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

=20V, I

D

=20A,  

R

L

=1Ω, R

GEN

=3Ω,  

V

GS

=10V  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

Drain-Source Diode Characteristics and Maximu

m

R

atings  

Maximum Continuous Drain to Source Diod

e

F

orward  

I

S  

–

–

–

–

–

–

–

20  

80  

1.2  

–

A

A

Current  

I

SM  

V

SD  

t

rr  

Maximum Pulsed Drain to Source Diode Forwar

d

C

urrent  

Drain to Source Diode Forward  

V

GS

=0V, I

S

=20A  

–

V

Voltage  

Body Diode Reverse Recovery Time  

10  

16  

ns  

nC  

T

J

=25

℃

,  

Body Diode Reverse Recovery  

I

F

=20A,dI/dt=100A/μs  

Q

rr  

–

Charge  

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature  

2. EAS condition: T

J

=25

℃

,VDD=30V,VG=10V, RG=25

Ω，

L=0.5mH  

3.  

Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%  

第

2

页 共

7

页  

Version 1.0  

富满微电子集团股份有限公司  

FINE MADE MICROELECTRONICS GROUP CO., LTD.  

N-Channel Trench Power MOSFET  

45N18

(

文件编号：

S&CIC2009)  

第

3

页 共

7

页  

Version 1.0  

富满微电子集团股份有限公司  

FINE MADE MICROELECTRONICS GROUP CO., LTD.  

N-Channel Trench Power MOSFET  

45N18

(

文件编号：

S&CIC2009)  

Safe Operation Area  

Thermal Transient Impedance  

第

4

页 共

7

页  

Version 1.0  

富满微电子集团股份有限公司  

FINE MADE MICROELECTRONICS GROUP CO., LTD.  

N-Channel Trench Power MOSFET  

45N18

(

文件编号：

S&CIC2009)  

Test Circuit  

Figure1:Gate Charge Test Circuit & Waveform  

Figure 2: Resistive Switching Test Circuit

&

W

aveforms  

第

5

页 共

7

页  

Version 1.0  

富满微电子集团股份有限公司  

FINE MADE MICROELECTRONICS GROUP CO., LTD.  

N-Channel Trench Power MOSFET  

45N18

(

文件编号：

S&CIC2009)  

Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms  

Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel)  

第

6

页 共

7

页  

Version 1.0  

富满微电子集团股份有限公司  

FINE MADE MICROELECTRONICS GROUP CO., LTD.  

N-Channel Trench Power MOSFET  

45N18

(

文件编号：

S&CIC2009)  

SOP-8 Package

 

Information  

符号  

毫米  

最小值  

–

典型值  

1.50  

0.10  

1.40  

0.60  

0.40  

0.22  

4.90  

6.00  

最大值  

1.55  

0.15  

1.45  

0.65  

0.45  

0.25  

4.95  

6.10  

4.00  

A

A1  

A2  

A3  

b

c

D

E

E1  

e

–

1.35  

0.55  

0.35  

0.17  

4.85  

5.90  

3.80  

3.90  

1.27BSC  

0.65  

L

0.60  

0.70  

L1  

θ

1.05BSC  

0

º

4

º

6

º

Version 1.0  

第

7

页 共

7

页