Shenzhen-JingYang-JY10220
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JY10220
100V N-Channel MOSFET
Applications
Features
•
DC/DC converter
•
2.6 A, 100 V
R
DS(ON)
= 90 m
Ω
@ V
GS
= 10 V
R
DS(ON)
= 85 m
Ω
@ V
GS
= 4.5 V
•
High performance trench technology for extremely
low R
DS(ON)
•
Low gate charge (14nC typ)
•
High power and current handling capability
•
Fast switching speed
Pin Configuration
D
D
D
S
1
6
5
4
D
G
2
3
SOT23-6
L
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
V
100
V
GSS
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
V
±
20
I
D
(Note 1a)
2.6
20
A
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
1.6
W
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +125
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
30
R
θ
JA
°
C/W
°
C/W
Thermal Resistance, Junction-to-Case
R
θ
JC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
3000 units
8mm
7”
JY10220
JY10220
Revision A
4
1
JY10220
100V N-Channel MOSFET
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
I
AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V
DD
= 50 V, I
D
=2.6 A
90
mJ
A
2.6
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
100
V
V
GS
= 0 V, I
D
= 250
µ
A
∆
BV
DSS
∆
T
J
Breakdown Voltage Temperature
Coefficient
99
I
D
= 250
µ
A, Referenced to 25
°
C
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
V
DS
= 80 V,
V
GS
= 0 V
GS
= 20 V, V
DS
= 0 V
10
µ
A
nA
nA
I
GSSF
I
GSSR
100
V
GS
= –20 V, V
DS
= 0 V
–100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
1
2.3
– 6
3
V
V
DS
= V
GS
, I
D
= 250
µ
A
∆
V
GS(th)
∆
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
µ
A, Referenced to 25
°
C
mV/
°
C
Vg
s
=
1
0 V,
Id = 1 A
Vgs = 4.5 V,
Id = 1 A
85
90
110
125
Static Drain–Source
On Resistance
m
Ω
R
DS(on)
I
D(on)
g
FS
On–State Drain Current
V
GS
= 10 V,
V
DS
= 5 V
10
A
S
Forward Transconductance
V
DS
= 10 V,
I
D
= 2.6 A
10
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
660
55
pF
pF
pF
V
DS
= 50 V,
f = 1.0 MHz
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
40
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
11
7
ns
ns
V
DD
= 50 V,
V
GS
= 10
V,
I
D
= 1 A,
R
GEN
= 6
Ω
3.5
23
37
7.4
20
ns
3.7
14
ns
Q
g
Q
gs
Q
gd
nC
nC
nC
V
DS
= 50 V,
I
D
= 2.6 A,
V
GS
= 10 V
2.3
3.6
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
1.3
1.2
A
V
Drain–Source Diode Forward
Voltage
V
SD
V
GS
= 0 V,
I
S
= 1.3 A
(Note 2)
(Note 2)
0.76
t
rr
Diode Reverse Recovery Time
31
56
nS
nC
I
F
= 2.6 A
d
iF
/d
t
= 100 A/µs
Q
rr
Diode Reverse Recovery Charge
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
a. 78°C/W
when mounted on a 1in
2
pad of 2oz copper on FR-4 board.
b. 156°C/W
when mounted on a minimum pad.
2.
Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
Revision A
4
2
JY10220
100V N-Channel MOSFET
Typical Characteristics
1.8
1.6
1.4
1.2
1
20
V
GS
= 10V
4.5V
5.0V
16
V
GS
= 3.5V
4.0V
12
8
4.0V
4.5V
5.0V
6.0V
10V
3.5V
4
0.8
0
0
4
8
12
16
20
0
2
4
6
8
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.26
0.23
0.2
2.2
1.8
1.4
1
I
D
= 2.6A
GS
= 10V
I
D
= 1.3A
V
T
A
= 125
o
C
0.17
0.14
0.11
0.08
0.05
0.6
0.2
T
A
= 25
o
C
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
16
12
8
V
GS
= 0V
V
DS
= 5V
10
T
A
= 125
o
C
1
25
o
C
0.1
-55
o
C
T
A
= 125
o
C
0.01
0.001
25
o
4
-55
o
C
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
2
2.5
3
3.5
4
4.5
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Revision A
4
3
JY10220
100V N-Channel MOSFET
Typical Characteristics
10
1000
800
600
400
200
0
f = 1MHz
I
D
= 2.6A
V
DS
= 25V
V
GS
= 0 V
50V
8
6
4
2
0
75V
C
ISS
C
OSS
C
RSS
0
3
6
9
12
15
0
20
40
60
80
100
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
40
30
20
10
0
SINGLE PULSE
R
θ
JA
= 156°C/W
T
A
= 25°C
100µs
R
DS(ON)
LIMIT
10
1
1ms
10ms
100ms
1s
10s
DC
0.1
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 156
o
C/W
0.01
0.001
T
A
= 25
o
C
0.1
1
10
100
1000
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 156 °C/W
0.2
P(pk)
0.1
0.1
t
1
0.05
t
2
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Revision A
4
4
JY10220
100V N-Channel MOSFET
Package Outline
SOT23-6L package
Revision A
4
5
JY10220
100V N-Channel MOSFET
Tape and Reel Specification
P0
P2
Φ2: 1.50±0.1
Device Orientation in Tape
T
E
F
Top
Cover
Tape
A0
W
B0
5° Max
Pin1 Location
Φ: 1.0±0.1
K0
P
Symbol
W
A0
B0
K0
E
F
P
P0
P2
T
Dimensions 8.00+0.3
(mm) -0.1
3.23±0.05 3.17±0.05 1.37±0.05 1.75±0.1 3.5±0.05 4.0±0.1 4.0±0.1 2.0±0.05 0.25±0.02
W1
S
K
M
N
R
H
W
Symbol
Reel Size
Φ178
M
N
W
W1
H
S
K
R
Dimensions
(mm)
178.0±1.0 60.0±1.0 11.5±0.5 9.0±0.5 13.0±0.5 2.0±0.1 11.0±0.2 1.0±0.05
Revision A
4
6
JY10220
100V N-Channel MOSFET
Marking Codes
6
5
4
10220
XXXY
1
2
3
Note:
(1)
“10220” is the part number,fixed.
(2) “XXX”
is the last 3 characters of the wafer’s Lot No.,
“Y” is the internal code.
Footprint: SOT23-6L
A
Dimensions
Symbol
Millimeters
Inches
0.024
0.043
0.037
0.055
0.098
0.141
A
B
C
D
E
F
0.60
1.10
0.95
1.40
2.50
3.60
E
D
B
F
C
Revision A
4
7
