Shenzhen-JingYang-TNM2K30K-BI

TNM2K30K

–

B

I

 

N-Channel 30-V (D-S)

 

MOSFET  

I

D  

V

(BR)DSS  

R

DS(on)

MAX  

SOT

–

23  

100

m  

2

00

m  

2

00

m  

2

00

m  

500

m  

A

A

A

A

A

@

VGS(th)  

@

VGS(th)  

Ω

1.

2

V  

1

.5V  

1

.

8

V  

2

.5V  

4.5V  

2

.5  

2.0

Ω  

V

30  

@

VGS(th)  

2

Ω  

1. GATE  

@

VGS(th)  

@

VGS(th)  

1.6

Ω  

1.2

Ω  

2. SOURCE  

3. DRAIN  

FEATURE  

z

z

z

Low on-resistance  

Fast switching speed  

Low voltage drive makes this device ideal for  

P

ortable equipment  

Equivalent Circuit  

z

z

Easily designed drive circuits  

Easy to parallel  

APPLICATION  

z

Interfacing , Switching  

M

ARKING  

3N2K

.

 

Marking: 3N2K

.

 

MOSFET MAXIMUM RATINGS (T

a

= 25°C unless otherwise noted)  

Unit  

V

Symbol  

Parameter  

Value  

30  

V

DS  

GS  

Drain-Source

V

oltage  

V

Gate-Source Voltage  

±

1

2  

V

I

D

Continuous Drain Current  

Power Dissipation  

0.

3

 

A

P

D

0.

3

5  

W

T

J

,

T

s

tg  

θ

JA  

Operation Junction and Storage Temperature Range  

Thermal Resistance, Junction-to-Ambient  

℃

℃

/W  

-55

~+

150  

357  

R

Revision A

1

 

1

TNM2K30K

–

B

I

 

N-Channel 30-V (D-S)

 

MOSFET  

T =25  

a

unless otherwise specified  

℃

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max  

Units  

Off Characteristics  

Drain-Source Breakdown Voltage  

V

DS  

I

DSS  

V

µA  

µA  

V

V

GS

= 0V, I

D

=

250

µA  

V

DS

=

28

V,V

GS

= 0V  

V

GS

=

±

8

V, V

DS

= 0V  

V

DS

=

VGS

, I

D

=

25

0µA  

30  

Zero Gate Voltage Drain Current  

Gate –Source leakage current  

Gate Threshold Voltage  

1

±

10  

1.

0

 

3

I

GSS  

V

GS(th)  

0.

6

 

Ω

–

V

GS

=

1

.

2

V, I

D

=

100

mA  

V

GS

=

1

.5V,I

D

=

2

00

mA  

V

GS

=

1

.

8

V,I

D

=

2

00

mA  

V

GS

=

2

.5V,I

D

=

2

00

mA  

–

Ω

2

R

DS(on)  

1.1  

0.85  

0.75  

0.33  

Drain-Source On-Resistance  

Ω

2

Ω

1.6  

1.2  

Ω

V

GS

=

4

.5V,I

D

=

5

00

mA  

Forward Transconductance  

Dynamic Characteristics

*  

Input Capacitance  

g

FS  

V

DS

=3V, I

D

= 10mA  

mS  

C

iss  

C

oss  

C

rss  

pF  

pF  

pF  

42  

12.2  

8

V

DS

=5V,V

GS

=0V,f =1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics

*  

Turn-On Delay Time  

Rise Time  

t

d(on)  

t

r  

t

d(off)  

t

f  

15  

35  

7

0  

7

0  

ns  

ns  

ns  

ns  

V

GS

=5V, V

DD

=5V,  

I

D

=10mA, R

g

=10

Ω

, R

L

=500

Ω

,  

Turn-Off Delay Time  

Fall Time  

1.

Surface−mounted on FR4 board using 1 in sq pad size  

(Cu area = 1.27 in sq [

2

oz] including traces).  

2.

Pulse Test: Pulse Width

≤

1

00 μs, Duty Cycle

≤

2.0%.  

3.

If the IGSS is application in Video signal you must  

notice the Value

.

 

Revision A

1

 

2

TNM2K30K

–

B

I  

N-Channel 30-V (D-S)

 

MOSFET  

2

1.5  

1

2.5  

2

VGS=9V,10V  

VGS=8V  

VDS=10V  

VGS=4.5V  

-55

℃

 

VGS=4V  

25

℃  

VGS=3.5V  

1.5  

1

VGS=7V  

VGS=6V  

150

℃  

VGS=5V  

0.5  

0

0.5  

0

VGS=2.5V  

0

0.5  

1

1.5  

2

0

2

4

6

VDS,Drain-to-Source Voltage(V)  

VGS,Gate-to-Source Votalge(V)  

Transfer Characteristics  

On-Region Characteristics  

1.8  

1.6  

1.4  

1.2  

1

10  

8

ID=0.2A  

6

4

2

0.8  

0.6  

0

0.6  

1

.2  

1.

8

 

2.5  

4.5  

10  

-50 -25  

0

25  

50  

75 100

 

125 150  

VGS,Gate-to-Source(V)  

T,temperature(

℃

)  

RDS(on) vs. VGS  

RDS(on) vs. Temperature  

Note:

此曲线仅供参

考，如

VGS(th)应用电压在  

1.

2

V以下时需与我司联糸

且Vth=1.2V时ID值最  

大

100

mA

需注意应用场合  

Revision A

1

 

3

TNM2K30K

–

B

I

 

N-Channel 30-V (D-S)

 

MOSFET  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min  

Max  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

c

D

E

E1  

e

e1  

L

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

0.950 T

Y

P  

0.550 REF  

0.037 T

Y

P  

0.022 REF  

1.800  

2.000  

0.071  

0.079  

L1  

θ

0.300  

0°  

0.500  

8°  

0.012  

0°  

0.020  

8

°  

SO

T

–

23 Suggested Pad Layout  

Revision A

1

 

4

TNM2K30K

–

B

I

 

N-Channel 30-V (D-S)

 

MOSFET  

SOT

–

23 Tape and reel  

SOT

–

23 Embossed

 

Carrier Tape  

P0  

P1  

C

A

A

A-A  

A

P

Dimensions are in millimeter  

Pkg type  

SOT23  

A

B

C

d

E

F

P0  

P

P1  

W

3.15  

2.77  

1.22  

Ø1.50  

1.75  

3.50  

4.00  

4.00  

2.00  

8.00  

SOT

–

23 Tape

 

Leader and Trailer  

Trailer Tape  

Leader Tape  

Components  

70±2 Empty Pockets  

50±2 Empty Pockets  

–

Revision A

1

 

5