Shenzhen-ruichips-Semicon-RU1H150S
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RU1H150S
N-Channel Advanced Power MOSFET
Features
Pin Description
• 108V/150A,
R
DS (ON)
=3.5m
Ω
(Typ.)@V
GS
=10V
D
• Advanced HEFET
®
Technology
• Ultra Low On-Resistance
• Excellent Q
g
xR
DS(on)
Product
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
G
S
TO263
D
Applications
• Motor Drives
• Uninterruptible Power Supplies
• DC/DC converter
G
• General Purpose Applications
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
108
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
T
STG
I
S
-55 to 175
150
T
C
=25°C
Mounted on Large Heat Sink
①
300
μ
s Pulse Drain Current Tested
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
600
150
106
288
144
0.52
62.5
A
A
I
DP
②
Continuous Drain Current(V
GS
=10V)
Maximum Power Dissipation
I
D
P
D
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
R
JC
R
JA
°C/W
°C/W
Drain-Source Avalanche Ratings
③
E
AS
Avalanche Energy, Single Pulsed
625
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2015
1
RU1H150S
Electrical Characteristics
(T
C
=25°C Unless Otherwise Noted)
RU1H150S
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
V
GS
=0V, I
DS
=250µA
V
DS
=108V, V
GS
=0V
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
108
115
V
1
30
4
µA
T
J
=125°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=75A
V
GS(th)
I
GSS
Gate Threshold Voltage
2
V
Gate Leakage Current
±100
4
nA
m
Ω
④
R
DS(ON)
Drain-Source On-state Resistance
3.5
Diode Characteristics
④
V
SD
I
SD
=75A, V
GS
=0V
Diode Forward Voltage
1.2
V
t
rr
Reverse Recovery Time
60
ns
nC
I
SD
=20A, dl
SD
/dt=100A/µs
Q
rr
Reverse Recovery Charge
560
⑤
Dynamic Characteristics
V
GS
=0V,V
DS
=0V,F=1MHz
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
Gate Resistance
2.6
6900
1250
47
Ω
V
GS
=0V,
V
DS
=50V,
Frequency=1.0MHz
Input Capacitance
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
48
56
V
DD
=50V,I
DS
=75A,
V
GEN
=10V,R
G
=2.5
Ω
ns
t
d(OFF)
t
f
Turn-off Delay Time
75
Turn-off Fall Time
33
⑤
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
117
40
V
DS
=50V, V
GS
=10V,
I
DS
=20A
nC
37
①
Pulse width limited by safe operating area.
Notes:
②
Calculated continuous current based on maximum allowable
junction temperature. The package
limitation current is 75A.
③
Limited by T
Jmax
, I
AS
=50A, V
DD
= 48V, R
G
= 50
Ω
, Starting T
J
= 25°C.
④
Pulse test;Pulse width
≤
300µs, duty cycle
≤
2%.
⑤
Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2015
2
RU1H150S
Ordering and Marking Information
Device
Marking
Package
Packaging Quantity
Reel Size
Tape width
RU1H150S
RU1H150S
TO263
Tube
50
–
–
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2015
3
RU1H150S
T
harac
t
ypical eristics
Power Dissipation
Drain Current
350
300
250
200
150
100
50
160
140
120
100
80
60
40
Limited By Package
20
V
GS
=10V
50
0
0
25
50
75
100
125
150
175
25
75
100
125
150
175
T
J
– Junction Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
Drain Current
30
25
20
15
10
5
Safe Operation Area
10000
1000
100
10
I
DS
=75A
10µs
100µs
1ms
10ms
DC
1
T
C
=25°C
0
0.1
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
100
V
GS
– Gate-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
0.01
Single Pulse
R
θ
JC
=
0.52°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2015
4
RU1H150S
Typical Characteristics
Drain-Source On Resistance
Output Characteristics
20
15
10
5
200
150
100
50
10V
9V
8V
7V
V
GS
=10V
0
0
0
30
60
90
120
150
0
1
2
3
4
5
I
D
– Drain Current (A)
V
DS
– Drain-Source Voltage (V)
Drain-Source On Resistance
Source-Drain Diode Forward
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
V
GS
=10V
I
D
=75A
J
T
J
=25°C
T
J
=25°C
Rds(on)=3.5m
Ω
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 -25
0
25
50
75 100
125 150 175
V
SD
– Source-Drain Voltage (V)
T
J
– Junction Temperature (
°
C)
Capacitance
Gate Charge
10000
10
Frequency=1.0MHz
DS
I
DS
=20A
9
8
7
6
5
4
3
2
1
0
8000
6000
4000
2000
0
Ciss
Coss
Crss
1
10
100
1000
0
50
100
150
V
DS
– Drain-Source Voltage (V)
Q
G
– Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2015
5
RU1H150S
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2015
6
RU1H150S
Package Information
TO263
θ
1
θ
1
θ
2
θ
θ
2
MM
NOM
INCH
NOM
MM
NOM
INCH
NOM
SYMBOL
SYMBOL
MIN
MAX
4.72
0.25
2.79
0.95
1.40
0.65
1.40
9.40
10.28
MIN
0.169
0.000
0.102
0.028
0.045
0.013
0.045
0.338
0.380
MAX
MIN
1.94
1.02
*
MAX
MIN
MAX
0.110
0.055
0.067
A
A1
A2
b
4.30
0.00
2.59
0.70
1.14
0.33
1.15
8.59
9.66
4.55
0.179
0.186
0.010
0.110
0.037
0.055
0.026
0.055
0.370
0.405
L
L3
2.30
2.79
1.40
1.70
0.076
0.040
*
0.091
0.10
0.005
1.29
0.051
2.69
0.106
L1
*
*
0.25 BSC
2.50 REF
0.01 BSC
0.098 REF
*
*
*
*
*
*
*
*
*
*
L4
b1
c
L2
0°
5°
*
8°
9°
0°
5°
*
8°
9°
θ
c1
D
7°
7°
θ1
θ2
DEP
Φp1
1°
3°
5°
1°
3°
5°
E
*
*
0.05
1.40
0.10
1.50
0.20
1.60
0.002
0.055
0.004
0.059
0.008
0.063
2.54BSC
0.100BSC
e
H
14.70
15.10
15.79
0.579
0.594
0.622
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2015
7
RU1H150S
Customer Service
Worldwide Sales and Service:
Technical Support:
Investor Relations Contacts:
Marcom Contact:
Editorial Contact:
HR Contact:
Legal Contact:
Shen Zhen RUICHIPS Semiconductor CO., LTD
4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park,
Nanshan District, Shenzhen, CHINA
TEL:
(86-755) 8311-5334
FAX:
(86-755) 8311-4278
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2015
8
