Shenzhen-ruichips-Semicon-RU205B
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RU205B
N-Channel Advanced Power MOSFET
Features
Pin Description
• 20V/5A,
R
R
DS (ON)
=30m
W
(Typ.) @ V
GS
=4.5V
DS (ON)
=38m
W
(Typ.) @ V
GS
=2.5V
• Low
R
DS (ON)
• Super High Dense Cell Design
•
Reliable and Rugged
SOT-23
• Lead Free and Green Available
Applications
•
Load Switch
•
PWM Applications
N-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
20
±12
V
DSS
V
GSS
T
J
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction
T
e
mperature
T
STG
I
S
Storage
T
e
mperature Range
-55 to 150
1.25
Diode Continuous Forward Current
T
A
=25°C
T
A
=25°C
Mounted on Large Heat Sink
①
20
I
DP
300μs Pulse Drain Current Tested
A
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
5
I
D
Continuous Drain Current(V
GS
=4.5V)
4
1
P
D
Maximum Power Dissipation
W
0.64
125
②
R
q
JA
Thermal Resistance-Junction to Ambient
°C/W
Rev. B– MAR., 2012
Electrical Characteristics
(T
A
=25°C Unless Otherwise Noted)
RU205B
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
V
GS(th)
Gate Threshold Voltage
V
V
GS
=0V, I
DS
=250
m
A
20
V
DS
=20V, V
GS
=0V
1
m
A
T
J
=85°C
30
V
V
DS
=V
GS
, I
DS
=250
m
A
0.5
–
1.5
I
GSS
Gate Leakage Current
V
GS
=±12V, V
DS
=0V
nA
±100
V
GS
=4.5V, I
DS
=5A
V
GS
=2.5V, I
DS
=3A
30
38
36
55
m
W
m
W
③
Drain-Source On-state Resistance
R
DS(ON)
Diode Characteristics
③
Diode Forward Voltage
I
SD
=1A, V
GS
=0V
1.0
V
V
SD
t
rr
Reverse Recovery Time
13
4
ns
I
SD
=1A, dl
SD
/dt=100A/
m
s
Q
rr
Reverse Recovery Charge
nC
④
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
W
0.8
208
30
18
6
Input Capacitance
V
GS
=0V,
V
DS
=10V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
pF
t
d(ON)
Turn-on Delay Time
t
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
V
DD
=10V, R
L
=10
W
,
I
DS
=1A, V
GEN
=4.5V,
R
G
=1
W
10
14
7
ns
④
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
4
V
DS
=16V, V
GS
=4.5V,
I
DS
=1A
Gate-Source Charge
Gate-Drain Charge
nC
0.5
1.2
Notes:
Pulse width limited by safe operating area.
②
When mounted on 1 inch square copper board, t
£
10sec. The value in any given application depends on
the user’s specific board design.
③
Pulse test ; Pulse width
£
300
m
s, duty cycle
£
2%.
④
Guaranteed by design, not subject to production testing.
2
Rev. B– MAR., 2012
Typical Characteristics
Power Dissipation
Drain Current
T
j
– Junction Temperature (
°
C)
T
j
– Junction Temperature (
°
C)
Thermal Transient Impedance
Safe Operation Area
V
DS
– Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
3
Rev. B– MAR., 2012
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
– Drain-Source Voltage (V)
Drain-Source On Resistance
I
D
– Drain Current (A)
Gate Threshold Voltage
V
GS
– Gate-Source Voltage (V)
T
j
– Junction Temperature (°C)
4
Rev. B– MAR., 2012
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
T
j
– Junction Temperature (°C)
Capacitance
V
SD
– Source-Drain Voltage (V)
Gate Charge
V
DS
– Drain-Source Voltage (V)
Q
G
– Gate Charge (nC)
5
Rev. B– MAR., 2012
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
6
Rev. B– MAR., 2012
Ordering and Marking Information
①
Device
Package
Packaging
Quantity
Reel Size
Tape width
Marking
RU205B
5XYWW
SOT-23
Tape&Reel
3000
7
’’
8mm
①
The following characters could be different and means:
X
Y
=Assembly site code
=Year
WW =Work
Week
7
Rev. B– MAR., 2012
Package Information
SOT-23
MM
INCH
MAX
0.045
MM
INCH
MAX
SYMBOL
SYMBOL
MIN
0.900
0.000
0.900
0.300
0.080
2.800
1.200
MAX
1.150
0.100
1.050
0.500
0.150
3.000
1.400
MIN
0.035
0.000
0.035
0.012
0.003
0.110
0.047
MIN
MAX
2.550
MIN
0.089
A
A1
A2
b
E1
e
2.250
0.100
0.004
0.041
0.020
0.006
0.118
0.055
0.950 TYP.
1.800 2.000
0.550 REF.
0.037 TYP.
e1
L
0.071
0.079
0.022 REF.
c
L1
θ
0.300
0
°
0.500
0.012
0.020
D
8
°
0
°
8
°
E
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
8
Rev. B– MAR., 2012
Customer Service
Worldwide Sales and Service:
Technical Support:
Investor Relations Contacts:
Marcom Contact:
Editorial Contact:
HR Contact:
Legal Contact:
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL:
(86-755) 8311-5334
FAX:
(86-755) 8311-4278
9
Rev. B– MAR., 2012
